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    Wyświetlanie 1-8 z 8
    Tytuł:
    The optical parameters of TiO2 antireflection coating prepared by atomic layer deposition method for photovoltaic application
    Autorzy:
    Szindler, Marek
    Szindler, Magdalena M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1835965.pdf
    Data publikacji:
    2020
    Wydawca:
    Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
    Tematy:
    thin film
    atomic layer deposition
    titanium dioxide
    Opis:
    Titanium dioxide thin films have been deposited on silicon wafers substrates by an atomic layer deposition (ALD) method. There optical parameters were investigated by spectroscopic ellipsometry and UV/VIS spectroscopy. A material with a refractive index of 2.41 was obtained. Additionally, in a wide spectral range it was possible to reduce the reflection from the silicon surface below 5%. The Raman spectroscopy method was used for structural characterization of anatase TiO2 thin films. Their uniformity and chemical composition are confirmed by a scanning electron microscope (SEM) energy dispersive spectrometer (EDS).
    Źródło:
    Optica Applicata; 2020, 50, 4; 663-670
    0078-5466
    1899-7015
    Pojawia się w:
    Optica Applicata
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    The impact of atomic layer deposition technological parameters on optical properties and morphology of Al2O3 thin films
    Autorzy:
    Dobrzanski, L. A.
    Szindler, M.
    Hajduk, B.
    Kotowicz, S.
    Powiązania:
    https://bibliotekanauki.pl/articles/173801.pdf
    Data publikacji:
    2015
    Wydawca:
    Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
    Tematy:
    thin film
    aluminum oxide
    atomic layer deposition
    Opis:
    This paper presents some results of investigations on aluminum oxide Al2O3 thin films prepared by the atomic layer deposition method on polished monocrystalline silicon. It has been described how the technological parameters of the deposition process, like the number of cycles and substrate temperature, influenced the optical properties and morphology of prepared thin films. Their physical and optical properties like thickness, uniformity and refractive index have been investigated with spectroscopic ellipsometry, atomic force microscopy and UV/vis optical spectroscopy.
    Źródło:
    Optica Applicata; 2015, 45, 4; 573-583
    0078-5466
    1899-7015
    Pojawia się w:
    Optica Applicata
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Surface roughness and residual stress evolution in SiNx/SiO2 multilayer coatings deposited by reactive pulsed magnetron sputtering
    Autorzy:
    Tien, Chuen-Lin
    Lee, Po-Wei
    Lin, Shih-Chin
    Lin, Hong-Yi
    Powiązania:
    https://bibliotekanauki.pl/articles/1835787.pdf
    Data publikacji:
    2021
    Wydawca:
    Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
    Tematy:
    thin film
    residual stress
    quarter-wave stack
    surface roughness
    Opis:
    The surface roughness and residual stress behavior in two types of SiNx/SiO2 dielectric quarter-wave stacks was investigated experimentally. A reactive pulsed magnetron sputtering system was used to prepare the SiNx/SiO2 multilayer thin films. The results show that SiNx/SiO2 quarter-wave stack with a buffer layer of MgF2 thin film can reduce the residual stress. The effect of aging on the residual stress in two quarter-wave stacks was also studied. We found that the residual stresses in both SiNx/SiO2 multilayer coatings are changed from a compressive state to a tensile stress state with increasing the aging time. The root mean square (RMS) surface roughness of MgF2/(SiNx/SiO2)22 and (SiNx/SiO2)22 quarter-wave stacks are 2.23 ± 0.22 nm and 2.08 ± 0.20 nm, respectively.
    Źródło:
    Optica Applicata; 2021, 51, 2; 223-233
    0078-5466
    1899-7015
    Pojawia się w:
    Optica Applicata
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Characterization of ZnO:Al layers for applications in thin film solar cells
    Autorzy:
    Zdyb, A.
    Krawczak, E.
    Lichograj, P.
    Powiązania:
    https://bibliotekanauki.pl/articles/173619.pdf
    Data publikacji:
    2016
    Wydawca:
    Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
    Tematy:
    transparent conductive oxide
    magnetron sputtering
    thin film solar cell
    Opis:
    Thin films of zinc oxide doped with aluminium were obtained by using the magnetron sputtering technique on glass substrates. The changes in magnetron power influence the structural, optical and electrical properties of the ZnO:Al layers. The deposited films are characterized by very good homogeneity and high optical transmission. Thicker films with larger agglomerates on the surface exhibit lower resistivity with the remaining good transparency.
    Źródło:
    Optica Applicata; 2016, 46, 2; 181-185
    0078-5466
    1899-7015
    Pojawia się w:
    Optica Applicata
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Investigation of hybrid Ge QDs/Si nanowires solar cell with improvement in cell efficiency
    Autorzy:
    Olyaee, S.
    Farhadipour, F.
    Powiązania:
    https://bibliotekanauki.pl/articles/173979.pdf
    Data publikacji:
    2018
    Wydawca:
    Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
    Tematy:
    nanowire
    absorption
    FDTD
    hybrid structure
    thin-film
    cylindrical quantum dots
    Opis:
    In this paper, the structure of a high-efficiency solar cell is presented by using a combination of quantum dots of germanium arrays and silicon nanowires on a thin film silicon layer. Due to the low absorption coefficient of silicon, this type of solar cell does not have high efficiency. According to the capability of the quantum structure in absorbing the incident photons and the generation of electron-hole pairs, this structure is proposed. Moreover, nanowires as an appropriate suggestion are applied in our work aiming to improve light scattering and optical photon absorption for the generation of carriers. Both of the electrical and optical characteristics of the solar cell are calculated by using a finite-difference time-domain method. Owing to the change of the nanowire length and increasing the number of quantum dot in our work, maximum power absorption is achieved. The achieved results provide a considerable improvement in efficiency and short-circuit current density. The efficiency is improved up to 17.5% and the short-circuit current density in the active layer of thickness 1170 nm has been provided to be 42.6 mA/cm2. The open circuit voltage for this cell is calculated to be 0.47 V. The achieved results provide a considerable improvement in efficiency and short-circuit current density in comparison with previously published method.
    Źródło:
    Optica Applicata; 2018, 48, 4; 633-645
    0078-5466
    1899-7015
    Pojawia się w:
    Optica Applicata
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Utilization of the cyclic interferometer in polarization phase-shifting technique to determine the thickness of transparent thin-films
    Autorzy:
    Kaewon, Rapeepan
    Pawong, Chutchai
    Chitaree, Ratchapak
    Lertvanithphol, Tossaporn
    Bhatranand, Apichai
    Powiązania:
    https://bibliotekanauki.pl/articles/173387.pdf
    Data publikacji:
    2020
    Wydawca:
    Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
    Tematy:
    polarization phase-shifting technique
    cyclic interferometric configuration
    non-destructive thickness measurements
    transparent thin film
    Opis:
    An alternative polarization phase-shifting technique is proposed to determine the thickness of transparent thin-films. In this study, the cyclic interferometric configuration is chosen to maintain the stability of the operation against external vibrations. The incident light is simply split by a non-polarizing beam splitter cube to generate test and reference beams, which are subsequently polarized by a polarizing beam splitter. Both linearly polarized beams are orthogonal and counter-propagating within the interferometer. A wave plate is inserted into the common paths to introduce an intrinsic phase difference between the orthogonal polarized beams. A transparent thin-film sample, placed in one of the beam tracks, modifies the output signal in terms of the phase retardation in comparison with the reference beam. The proposed phase-shifting technique uses a moving mirror with a set of “fixed” polarizing elements, namely, a quarter-wave retarder and a polarizer, to facilitate phase extraction without rotating any polarizing devices. The measured thicknesses are compared with the measurements of the same films acquired using standard equipment such as the field-emission scanning electron microscope and spectroscopic ellipsometer. Experimental results with the corresponding measured values are in good agreement with commercial measurements. The system can be reliably utilized for non-destructive thickness measurements of transparent thin-films.
    Źródło:
    Optica Applicata; 2020, 50, 1; 69-81
    0078-5466
    1899-7015
    Pojawia się w:
    Optica Applicata
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Refractive index and salinity sensors by gallium-doped zinc oxide thin film coated on side-polished fibers
    Autorzy:
    Tien, Chuen-Lin
    Mao, Hao-Sheng
    Mao, Tzu-Chi
    Powiązania:
    https://bibliotekanauki.pl/articles/1835762.pdf
    Data publikacji:
    2021
    Wydawca:
    Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
    Tematy:
    refractive index
    thin film
    side-polished fiber
    lossy mode resonance
    gallium-doped zinc oxide
    Opis:
    This work presents a high-sensitivity refractive index and salinity sensor by using fiber-optic side-polishing and electron-beam evaporation techniques. Thin film coated on the flat surface of side-polished fibers can generate a lossy mode resonance (LMR) effect. A gallium-doped zinc oxide (GZO) thin film was prepared by an electron-beam evaporation with the ion assisted deposition method. The residual thickness of the side-polished fiber was 76.5 μm, and GZO film thickness of 69 nm was deposited on the flat surface of the side-polished fiber to fabricate LMR-based fiber sensors. The variation in the optical spectrum of LMR-based fiber sensors was measured by different refractive index saline solutions. The LMR wavelength shift is caused by the refractive index change, which is nearly proportional to the salinity. The corresponding sensitivity of the proposed fiber-optic sensor was 3059 nm/RIU (refractive index unit) for the refractive index range of 1.333 to 1.398. To evaluate the sensitivity of LMR salinity sensors, the saline solution salinities of 3.6%, 7.3%, 10.9%, 14.6%, 18.2% and 21.9% were measured in this work. The experimental result shows that the sensitivity of the proposed salinity sensor is 9.94 nm/%.
    Źródło:
    Optica Applicata; 2021, 51, 1; 23-36
    0078-5466
    1899-7015
    Pojawia się w:
    Optica Applicata
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Influence of a back side dielectric mirror on thin film silicon solar cells performance
    Autorzy:
    Cieslak, Krystian
    Fave, Alain
    Lemiti, Mustapha
    Powiązania:
    https://bibliotekanauki.pl/articles/174381.pdf
    Data publikacji:
    2019
    Wydawca:
    Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
    Tematy:
    thin film silicon solar cells
    back side emitter
    back side mirror
    vapor phase epitaxy
    Bragg mirror
    IMD optical properties simulation
    Opis:
    Back side p+ emitter thin silicon solar cells have been constructed using vapor phase epitaxy. Double porous structure on a c-Si substrate was used as a seed substrate in order to enable active layer separation after vapor phase epitaxy growth. Structure of the back side emitter solar cell was obtained in situ during the epitaxy process. In order to enhance solar cell response to light from a range of 700–1200 nm wavelength, the back side dielectric mirror was developed and optimized by means of a computer simulation and deposited by plasma enhanced chemical vapor deposition. At the same time, a reference sample was fabricated. Comparison of solar cells performance with or without the back side mirror was performed and clearly shows that the quality of solar light conversion into the electricity by means of solar cells, can be improved by using the structure proposed in this article.
    Źródło:
    Optica Applicata; 2019, 49, 1; 151-159
    0078-5466
    1899-7015
    Pojawia się w:
    Optica Applicata
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-8 z 8

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