Temat: AlGaN/GaN heterostructure - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Influence of high Al fraction on reactive ion etching of AlGaN/GaN heterostructures
Autorzy:: Gryglewicz, J
Stafiniak, A
Wosko, M
Prazmowska, J
Paszkiewicz, B
Powiązania:: https://bibliotekanauki.pl/articles/174309.pdf
Data publikacji:: 2013
Wydawca:: Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
Tematy:: reactive ione etching
HEMT
AlGaN/GaN heterostructure
Opis:: In this study, the results of reactive ion etching (RIE) process of diversified Al content AlxGa1–xN/AlN/GaN/sapphire heterostructures were presented. The Al fractions of 22, 25, 31 and 36% were examined. An impact of Al content in the heterostructures on the etch rates and surface morphology was investigated. The influence of used Cl2/BCl3/Ar gas mixture with varying of BCl3 flow on the etch rate of Al0.2Ga0.8N/GaN/sapphire, surface morphology and angle of mesa slope, was discussed.
Źródło:: Optica Applicata; 2013, 43, 1; 27-33
0078-5466
1899-7015
Pojawia się w:: Optica Applicata
Dostawca treści:: Biblioteka Nauki

Artykuł

Zmień widok

na półce

Skocz do pozycji: 2.

Tytuł:: Measurements of AlGaN/GaN heterostructures for sensor applications
Autorzy:: Hojko, M R
Paszuk, D
Paszkiewicz, B
Powiązania:: https://bibliotekanauki.pl/articles/174545.pdf
Data publikacji:: 2013
Wydawca:: Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
Tematy:: sensor
AlGaN/GaN heterostructure
electrolyte
two-dimensional electron gas (2DEG)
pH
Opis:: In the paper, the behavior of AlGaN/GaN HEMT-type heterostructures in a water solution of (KOH + HCl) with differing pH was studied. The influence of the electrolyte pH on channel pinch-off voltage was measured using impedance spectroscopy methods. It was observed that the change of the pH of electrolyte has a strong effect on the pinch-off voltage of AlGaN/GaN HEMT-type heterostructures independently of the concentration of other ions. In high-pH environment the so-called memory effect of heterostructures was revealed. Its possible origin was discussed. A general theory to explain all results was proposed.
Źródło:: Optica Applicata; 2013, 43, 1; 35-38
0078-5466
1899-7015
Pojawia się w:: Optica Applicata
Dostawca treści:: Biblioteka Nauki

Artykuł

Zmień widok

na półce

Skocz do pozycji: 3.

Tytuł:: Influence of AlN spacer on the properties of AlGaN/AlN/GaN heterostructures
Autorzy:: Wosko, M
Paszkiewicz, B
Paszkiewicz, R
Tlaczala, M
Powiązania:: https://bibliotekanauki.pl/articles/174100.pdf
Data publikacji:: 2013
Wydawca:: Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
Tematy:: AlGaN/GaN
heterostructure
AlN spacer
MOVPE
Opis:: AlGaN/GaN heterostructures attract attention of many research groups over the last decade because of their superior properties (high mobility and saturation velocity of 2DEG) and strong capability in high frequency/power electronics and sensors applications. One of the factors which reduces the mobility of two-dimensional electron gas (2DEG) is the alloy and interface roughness scattering mechanism occurring at the heterointerface. Mathematical calculations of a wave-function of 2DEG in the channel show that theses two phenomena play an important role, due to the fact that some electrons in 2DEG can migrate into AlGaN barrier and be strongly dissipated. One of the proposed solutions against alloy scattering in the buffer layer is the use of thin AlN spacer at the heterointerface between AlGaN and GaN layers. AlN layer enhances the conduction band offset due to a polarization-induced dipole in the AlN layer, and therefore increases carrier confinement. Several Al0.18GaN0.82/AlN/GaN heterostructures with different AlN spacer layer thickness were grown by MOVPE method for studies of the Hall mobility and sheet carrier concentration of 2DEG. Hall measurements performed using Van der Pauw shown mobility maximum at nominally 1.3 nm AlN spacer thickness and almost linear dependence of sheet carrier concentration with AlN spacer thickness in the range from 0.7 to 2 nm.
Źródło:: Optica Applicata; 2013, 43, 1; 61-66
0078-5466
1899-7015
Pojawia się w:: Optica Applicata
Dostawca treści:: Biblioteka Nauki

Artykuł

Zmień widok

na półce

Informacja

Wyszukujesz frazę "AlGaN/GaN heterostructure" wg kryterium: Temat

Źródło danych

Dostawca treści

Kolekcja

Rok wydania

Wydawca

Temat

Autor

Typ dokumentu

Język