- Tytuł:
- Formation of Cr ohmic contact on graphitized 6H-SiC(0001) surface
- Autorzy:
-
Grodzicki, M
Mazur, P
Wasielewski, R
Ciszewski, A - Powiązania:
- https://bibliotekanauki.pl/articles/173424.pdf
- Data publikacji:
- 2013
- Wydawca:
- Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
- Tematy:
-
silicon carbide
chromium
electric contacts
graphitization - Opis:
- Ohmic electrical contacts were formed at room temperature on n-type, Si-oriented 6H-SiC substrates, with Cr layers vapor-deposited under ultra-high vacuum conditions on the samples being graphitized prior to the deposition. The contacts reveal a very good linearity of the local I–V characteristics. This method of ohmic contact formation does not require the use of samples with high doping concentration and the application of high-temperature annealing during the processing of contacts. Results of characterization of the contacts and of the in situ graphitization process of the SiC substrates, obtained by X-ray photoelectron spectroscopy (XPS), low energy electron diffraction (LEED) and atomic force microscopy (AFM) with conducting tip, are given in this paper.
- Źródło:
-
Optica Applicata; 2013, 43, 1; 91-98
0078-5466
1899-7015 - Pojawia się w:
- Optica Applicata
- Dostawca treści:
- Biblioteka Nauki
Artykuł