- Tytuł:
- Optimization of p-type contacts to InGaN-based laser diodes and light emitting diodes grown by plasma assisted molecular beam epitaxy
- Autorzy:
-
Nowakowski-Szkudlarek, Krzesimir
Muziol, Grzegorz
Żak, Mikolaj
Hajdel, Mateusz
Siekacz, Marcin
Feduniewicz-Żmuda, Anna
Skierbiszewski, Czesław - Powiązania:
- https://bibliotekanauki.pl/articles/173471.pdf
- Data publikacji:
- 2020
- Wydawca:
- Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
- Tematy:
-
gallium nitride
molecular beam epitaxy
contacts - Opis:
- We investigated the influence of the In0.17Ga0.83N:Mg contact layer grown by plasma assisted molecular beam epitaxy on the resistivity of p-type Ni/Au contacts. We demonstrate that the Schottky barrier width for p-type contact is less than 5 nm. We compare circular transmission line measurements with a p-n diode current-voltage characteristics and show that discrepancies between these two methods can occur if surface quality is deteriorated. It is found that the most efficient contacts to p-type material consist of In0.17Ga0.83N:Mg contact layer with Mg doping levelas high as 2 × 1020 cm–3.
- Źródło:
-
Optica Applicata; 2020, 50, 2; 323-330
0078-5466
1899-7015 - Pojawia się w:
- Optica Applicata
- Dostawca treści:
- Biblioteka Nauki
Artykuł