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Wyszukujesz frazę "low-frequency noise" wg kryterium: Temat


Wyświetlanie 1-7 z 7
Tytuł:
Noise spectroscopy of resistive components at elevated temperature
Autorzy:
Stadler, A.W.
Zawiślak, Z.
Dziedzic, A.
Nowak, D.
Powiązania:
https://bibliotekanauki.pl/articles/221348.pdf
Data publikacji:
2014
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
noise spectroscopy
low-frequency noise
resistance noise
low-frequency noise measurements
thick-film resistors
Opis:
Studies of electrical properties, including noise properties, of thick-film resistors prepared from various resistive and conductive materials on LTCC substrates have been described. Experiments have been carried out in the temperature range from 300 K up to 650 K using two methods, i.e. measuring (i) spectra of voltage fluctuations observed on the studied samples and (ii) the current noise index by a standard meter, both at constant temperature and during a temperature sweep with a slow rate. The 1/f noise component caused by resistance fluctuations occurred to be dominant in the entire range of temperature. The dependence of the noise intensity on temperature revealed that a temperature change from 300 K to 650 K causes a rise in magnitude of the noise intensity approximately one order of magnitude. Using the experimental data, the parameters describing noise properties of the used materials have been calculated and compared to the properties of other previously studied thick-film materials.
Źródło:
Metrology and Measurement Systems; 2014, 21, 1; 15-26
0860-8229
Pojawia się w:
Metrology and Measurement Systems
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Noise Properties of Graphene-Polymer Thick-Film Resistors
Autorzy:
Mleczko, K.
Ptak, P.
Zawiślak, Z.
Słoma, M.
Jakubowska, M.
Kolek, A.
Powiązania:
https://bibliotekanauki.pl/articles/220754.pdf
Data publikacji:
2017
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
graphene
polymer thick-film resistor
low-frequency noise
noise measurements
Opis:
Graphene is a very promising material for potential applications in many fields. Since manufacturing technologies of graphene are still at the developing stage, low-frequency noise measurements as a tool for evaluating their quality is proposed. In this work, noise properties of polymer thick-film resistors with graphene nano-platelets as a functional phase are reported. The measurements were carried out in room temperature. 1/f noise caused by resistance fluctuations has been found to be the main component in the specimens. The parameter values describing noise intensity of the polymer thick-film specimens have been calculated and compared with the values obtained for other thick-film resistors and layers used in microelectronics. The studied polymer thick-film specimens exhibit rather poor noise properties, especially for the layers with a low content of the functional phase.
Źródło:
Metrology and Measurement Systems; 2017, 24, 4; 589-594
0860-8229
Pojawia się w:
Metrology and Measurement Systems
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Noise Properties Of Thick-Film Conducting Lines For Integrated Inductors
Autorzy:
Stadler, A. W.
Kolek, A.
Mleczko, K.
Zawiślak, Z.
Dziedzic, A.
Nowak, D.
Powiązania:
https://bibliotekanauki.pl/articles/221399.pdf
Data publikacji:
2015
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
low-frequency noise
thick-film conducting layer
thick-film inductor
Opis:
Studies of noise properties of thick-film conducting lines from Au or PdAg conductive pastes on LTCC or alumina substrates are reported. Experiments have been carried out at the room temperature on samples prepared in the form of meanders by traditional screen-printing or laser-shaping technique. Due to a low resistance of the devices under test (DUTs), low-frequency noise spectra have been measured for the dc-biased samples arranged in a bridge configuration, transformer-coupled to a low-noise amplifier. The detailed analysis of noise sources in the signal path and its transfer function, including the transformer, has been carried out, and a procedure for measurement setup self-calibration has been described. The 1/f noise component originating from resistance fluctuations has been found to be dominant in all DUTs. The analysis of experimental data leads to the conclusion that noise is produced in the bends of meanders rather than in their straight segments. It occurs that noise of Au-based laser-shaped lines is significantly smaller than screen-printed ones. PdAg lines have been found more resistive but simultaneously less noisy than Au-based lines.
Źródło:
Metrology and Measurement Systems; 2015, 22, 2; 229-240
0860-8229
Pojawia się w:
Metrology and Measurement Systems
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
On the design of an automated system for the characterization of the electromigration performance of advanced interconnects by means of low-frequency noise measurements
Autorzy:
Scandurra, Graziella
Beyne, Sofie
Giusi, Gino
Ciofi, Carmine
Powiązania:
https://bibliotekanauki.pl/articles/221721.pdf
Data publikacji:
2019
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
low-frequency noise measurements
electron devices reliability
electro-migration
dedicated instrumentation
Opis:
Low-frequency noise measurements have long been recognized as a valuable tool in the examination of quality and reliability of metallic interconnections in the microelectronic industry. While characterized by very high sensitivity, low-frequency noise measurements can be extremely time-consuming, especially when tests have to be carried out over an extended temperature range and with high temperature resolutionas it is required by some advanced characterization approaches recently proposed in the literature. In order to address this issue we designed a dedicated system for the characterization of the low-frequency noise produced by a metallic line vs temperature. The system combines high flexibility and automation with excellent background noise levels. Test temperatures range from ambient temperature up to 300°C. Measurements can be completely automated with temperature changing in pre-programmed steps. A ramp temperature mode is also possible that can be used, with proper caution, to virtually obtain a continuous plot of noise parameters vs temperature.
Źródło:
Metrology and Measurement Systems; 2019, 26, 1; 13-21
0860-8229
Pojawia się w:
Metrology and Measurement Systems
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Metrology and control of electromagnetically actuated cantilevers using optical beam deflection method
Autorzy:
Kopiec, Daniel
Majstrzyk, Wojciech
Pruchnik, Bartosz
Gacka, Ewelina
Badura, Dominik
Sierakowski, Andrzej
Janus, Paweł
Gotszalk, Teodor
Powiązania:
https://bibliotekanauki.pl/articles/2052166.pdf
Data publikacji:
2021
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
optical beam deflection
thermomechanical noise
low frequency noise
electromagnetically actuated cantilever
Lorentz force
Opis:
In this paper, we present metrology and control methods and techniques for electromagnetically actuated microcantilevers. The electromagnetically actuated cantilevers belong to the micro electro mechanical systems (MEMS), which can be used in high resolution force and mass change investigations. In the described experiments, silicon cantilevers with an integrated Lorentz current loop were investigated. The electromagnetically actuated cantilevers were characterized using a modified optical beam deflection (OBD) system, whose architecture was optimized in order to increase its resolution. The sensitivity of the OBD system was calibrated using a reference cantilever, whose spring constant was determined through thermomechanical noise analysis registered interferometrically. The optimized and calibrated OBD system was used to observe the resonance and bidirectional static deflection of the electromagnetically deflected cantilevers. After theoretical analysis and further experiments, it was possible to obtain setup sensitivity equal to 5.28 mV/nm.
Źródło:
Metrology and Measurement Systems; 2021, 28, 4; 627-642
0860-8229
Pojawia się w:
Metrology and Measurement Systems
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
FET input voltage amplifier for low frequency noise measurements
Autorzy:
Achtenberg, Krzysztof
Mikołajczyk, Janusz
Bielecki, Zbigniew
Powiązania:
https://bibliotekanauki.pl/articles/221854.pdf
Data publikacji:
2020
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
low noise amplifier
low frequency noise measurements
field effect transistors
FET voltage noise
FET input amplifier
Opis:
The paper presents a low noise voltage FET amplifier for low frequency noise measurements. It was built using two stages of an op amp trans impedance amplifier. To reduce voltage noise, eight-paralleled low noise discrete JFETs were used in the first stage. The designed amplifier was then compared to commercial ones. Its measured value of voltage noise spectral density is around 24 nV/√Hz, 3 nV/√Hz, 0.95 nV/√Hz and 0.6 nV/√Hz at the frequency of 0.1, 1, 10 and 100 Hz, respectively. A -3dB frequency response is from ~20 mHz to ~600 kHz.
Źródło:
Metrology and Measurement Systems; 2020, 27, 3; 531-540
0860-8229
Pojawia się w:
Metrology and Measurement Systems
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Noise Measurements Of Resistors With The Use Of Dual-Phase Virtual Lock-In Technique
Autorzy:
Stadler, A. W.
Kolek, A.
Zawiślak, Z.
Dziedzic, A.
Powiązania:
https://bibliotekanauki.pl/articles/221468.pdf
Data publikacji:
2015
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
1/f noise
polymer thick-film resistor
low-frequency noise measurements
virtual lock-in
Opis:
Measurement of low-frequency noise properties of modern electronic components is a very demanding challenge due to the low magnitude of a noise signal and the limit of a dissipated power. In such a case, an ac technique with a lock-in amplifier or the use of a low-noise transformer as the first stage in the signal path are common approaches. A software dual-phase virtual lock-in (VLI) technique has been developed and tested in low-frequency noise studies of electronic components. VLI means that phase-sensitive detection is processed by a software layer rather than by an expensive hardware lock-in amplifier. The VLI method has been tested in exploration of noise in polymer thick-film resistors. Analysis of the obtained noise spectra of voltage fluctuations confirmed that the 1/f noise caused by resistance fluctuations is the dominant one. The calculated value of the parameter describing the noise intensity of a resistive material, C= 1·10−21m3, is consistent with that obtained with the use of a dc method. On the other hand, it has been observed that the spectra of (excitation independent) resistance noise contain a 1/f component whose intensity depends on the excitation frequency. The phenomenon has been explained by means of noise suppression by impedances of the measurement circuit, giving an excellent agreement with the experimental data.
Źródło:
Metrology and Measurement Systems; 2015, 22, 4; 503-512
0860-8229
Pojawia się w:
Metrology and Measurement Systems
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-7 z 7

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