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Wyszukujesz frazę "Hall effect" wg kryterium: Temat


Wyświetlanie 1-2 z 2
Tytuł:
Magnetotransport measurements as a tool for searching 3D topological insulators
Autorzy:
Śliż, Paweł
Sankowska, Iwona
Bobko, Ewa
Szeregij, Eugeniusz
Grendysa, Jakub
Tomaka, Grzegorz
Żak, Dariusz
Płoch, Dariusz
Jasik, Agata
Powiązania:
https://bibliotekanauki.pl/articles/2052167.pdf
Data publikacji:
2021
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
materials science
magnetotransport
topological insulators
quantum Hall effect
Opis:
The paper covers some measurement aspects of transport of electrons through metals and semiconductors in magnetic field - magnetotransport - allowing for the determination of electrical parameters characteristic of three-dimensional (3D) topological insulators (TI) (i.e. those that behave like an insulator inside their volume and have a conductive layer on their surface). A characteristic feature of the 3D TI is also a lack of differences between the chemical composition of the conductive surface and the interior of the material tested and the fact that the electron states for its surface conductivity are topologically protected. In particular, the methods of generating strong magnetic fields, obtaining low temperatures, creating electrical contacts with appropriate geometry were presented, and the measurement methods were reviewed. In addition, the results of magnetotransport measurements obtained for two volumetric samples based on the HgCdTe compound grown with the molecular beam epitaxy method are presented.
Źródło:
Metrology and Measurement Systems; 2021, 28, 4; 725-734
0860-8229
Pojawia się w:
Metrology and Measurement Systems
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Semiconductor contact layer characterization in a context of hall effect measurements
Autorzy:
Kowalewski, Andrzej
Wróbel, Jarosław
Boguski, Jacek
Gorczyca, Kinga
Martyniuk, Piotr
Powiązania:
https://bibliotekanauki.pl/articles/220890.pdf
Data publikacji:
2019
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
metal contact
contact layer
contact resistance
Hall effect
resistivity
van der Pauw method
MSM structure
semiconductors’ characterization
Opis:
A revision of the standard approach to characterization of thin-semiconductor-layer Hall samples has been proposed. Our results show that simple checking of I(V) curve linearity at room temperature might be insufficient for correct determination of bias conditions of a sample before measurements of Hall effect. It is caused by the nonlinear behaviour of electrical contact layers, which should be treated together with the tested layer a priori as a metal-semiconductor-metal (MSM) structure. Our approach was examined with a Be-doped p-type InAs epitaxial layer, with four gold contacts. Despite using full high-quality photolithography a significant asymmetry in maximum differential resistance (Rd) values and positions relative to zero voltage (or current) value was observed for different contacts. This suggests that such characterization should be performed before each high-precision magneto-transport measurement in order to optimize the bias conditions.
Źródło:
Metrology and Measurement Systems; 2019, 26, 1; 109-114
0860-8229
Pojawia się w:
Metrology and Measurement Systems
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-2 z 2

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