Temat: contact potential difference - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Comparison of the barrier height measurements by the Powell method with the phi MS measurement results
Autorzy:: Piskorski, K.
Kudła, A.
Rzodkiewicz, W.
Przewłocki, H. M.
Powiązania:: https://bibliotekanauki.pl/articles/308846.pdf
Data publikacji:: 2005
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: barrier height
effective contact potential difference
MOS system
Opis:: In this work, we have compared the barrier height measurements carried out using the Powell method with the photoelectric effective contact potential difference (phi MS) measurement results. The photoelectric measurements were performed on the samples that were previously applied in the investigation of the influence of stress on the duration of annealing in nitrogen. This paper shows that the results of barrier height measurement using the Powell method differ significantly from the phi MS measurement results.
Źródło:: Journal of Telecommunications and Information Technology; 2005, 1; 120-123
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Investigation of barrier height distributions over the gate area of Al-SiO2-Si structures
Autorzy:: Piskorski, K.
Przewłocki, H. M.
Powiązania:: https://bibliotekanauki.pl/articles/308661.pdf
Data publikacji:: 2007
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: barrier height
effective contact potential difference
MOS system
Opis:: Distributions of the gate-dielectric EBG(x, y) and semiconductor-dielectric EBS(x, y) barrier height values have been determined using the photoelectric measurement method. Modified Powell-Berglund method was used to measure barrier height values. Modification of this method consisted in using a focused UV light beam of a small diameter d =0.3 mm. It was found that the EBG(x, y) distribution has a characteristic dome-like shape which corresponds with the independently determined shape of the effective contact potential difference fMS(x, y) distribution. On the other hand, the EBS(x, y) distribution is of a random character. It is shown that the EBG(x, y) distribution determines the shape of the fMS(x, y) distribution. The model of the EBG and EBS barrier height distributions over the gate area has been proposed.
Źródło:: Journal of Telecommunications and Information Technology; 2007, 3; 49-54
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Photoelectric measurements of the local values of the effective contact potential difference in the MOS structure
Autorzy:: Kudła, A.
Przewłocki, H.
Brzezińska, D.
Borowicz, L.
Powiązania:: https://bibliotekanauki.pl/articles/308842.pdf
Data publikacji:: 2005
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: MIS structure
photoelectrical methods
internal photoemission
contact potential difference
Opis:: We have shown that using focused UV laser beam in photoelectric methods it is possible to measure local phi MS values over the gate area of a single MOS structure. The phi MS distribution is such that its values are highest far away from the gate edges regions, lower in the vicinity of gate edges and still lower in the vicinity of gate corners. Examples of measurement results and description of the measurement system are presented. The dependence of the phi MS value on the exposure time and the power density of UV light is discussed.
Źródło:: Journal of Telecommunications and Information Technology; 2005, 1; 112-114
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

Artykuł

Informacja