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Wyszukujesz frazę "capacitance" wg kryterium: Temat


Wyświetlanie 1-4 z 4
Tytuł:
Efficient procedure for capacitance matrix calculation of multilayer VLSI interconnects using quasi-static analysis and Fourier series approach
Autorzy:
Ymeri, H.
Nauwelaers, B.
Maex, K.
Powiązania:
https://bibliotekanauki.pl/articles/309281.pdf
Data publikacji:
2002
Wydawca:
Instytut Łączności - Państwowy Instytut Badawczy
Tematy:
lossy IC interconnect
Fourier projection method
line capacitance
Opis:
In this paper, we present a new approach for capacitance matrix calculation of lossy multilayer VLSI interconnects based on quasi-static analysis and Fourier projection technique. The formulation is independent from the position of the interconnect conductors and number of layers in the structure, and is especially adequate to model 2D and 3D layered structures with planar boundaries. Thanks to the quasi-static algorithms considered for the capacitance analysis and the expansions in terms of convergent Fourier series the tool is reliable and very efficient; results can be obtained with relatively little programming effort. The validity of the technique is verified by comparing its results with on-surface MEI method, moment method for total charges in the structure, and CAD-oriented equivalent-circuit methodology, respectively.
Źródło:
Journal of Telecommunications and Information Technology; 2002, 2; 40-44
1509-4553
1899-8852
Pojawia się w:
Journal of Telecommunications and Information Technology
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Novel Method of Improving Electrical Properties of Thin PECVD Oxide Films by Fluorination of Silicon Surface Region by RIE in RF CF4 Plasma
Autorzy:
Kalisz, M.
Głuszko, G.
Beck, R. B.
Powiązania:
https://bibliotekanauki.pl/articles/308057.pdf
Data publikacji:
2010
Wydawca:
Instytut Łączności - Państwowy Instytut Badawczy
Tematy:
capacitance-voltage characteristics
current-voltage characteristics
fluorine plasma
radio frequency reactive ion etching
Opis:
This study describes a novel technique to form good quality low temperature oxide (< 350 C degree). Low temperature oxide was formed by N2O + SiH4:N2 plasma in a plasma enhanced chemical vapour deposition (PECVD) system on the silicon surface reactively etched in CF4 plasma (RIE - reactive ion etching). The fabricated oxide demonstrated excellent (for low temperature dielectric formation process) currentvoltage (I-V) characteristics, such as: low leakage current, high breakdown voltage and good reliability. Experimental results indicate that the proposed method of fluorine incorporation into the SiO2/Si inteface improves electrical parameters of MOS structures.
Źródło:
Journal of Telecommunications and Information Technology; 2010, 1; 20-24
1509-4553
1899-8852
Pojawia się w:
Journal of Telecommunications and Information Technology
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
The Effect of High Temperature Annealing on Fluorine Distribution Profile and Electro-Physical Properties of Thin Gate Oxide Fluorinated by Silicon Dioxide RIE in CF4 Plasma
Autorzy:
Kalisz, M.
Głuszko, G.
Beck, R. B.
Powiązania:
https://bibliotekanauki.pl/articles/308059.pdf
Data publikacji:
2010
Wydawca:
Instytut Łączności - Państwowy Instytut Badawczy
Tematy:
capacitance-voltage characteristics
current-voltage characteristics
fluorine plasma
high temperature annealing process
radio frequency reactive ion etching
Opis:
This study describes the effects of high temperature annealing performed on structures fluorinated during initial silicon dioxide reactive ion etching (RIE) process in CF4 plasma prior to the plasma enhanced chemical vapour deposition (PECVD) of the final oxide. The obtained results show that fluorine incorporated at the PECVD oxide/Si interface during RIE is very stable even at high temperatures. Application of fluorination and high temperature annealing during oxide layer fabrication significantly improved the properties of the interface (Ditmb decreased), as well as those of the bulk of the oxide layer (Qeff decreased). The integrity of the oxide (higher Vbd ) and its uniformity (Vbd distribution) are also improved.
Źródło:
Journal of Telecommunications and Information Technology; 2010, 1; 25-28
1509-4553
1899-8852
Pojawia się w:
Journal of Telecommunications and Information Technology
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Correlation between electric parameters of carbon layers and their capacity for field emission
Autorzy:
Gronau, R.
Powiązania:
https://bibliotekanauki.pl/articles/308655.pdf
Data publikacji:
2007
Wydawca:
Instytut Łączności - Państwowy Instytut Badawczy
Tematy:
carbon layers
diamond-like carbon (DLC)
field emission
RF PACVD
AFM
capacitance-voltage (C-V)
current-voltage (I-V)
Opis:
The aim of this work is to study a possibility of field electron emission from carbon layers produced by radio frequency plasma chemical vapor deposition (RF PCVD) method. A correlation between electric parameters of the layers and the ability to produce electron emission is also studied through material (AFM) and electrical (C-V, I-V) characterization of the obtained layers. It is demonstrated that the layers deposited with the highest self-bias exhibit the highest capacity for electron emission.
Źródło:
Journal of Telecommunications and Information Technology; 2007, 3; 37-38
1509-4553
1899-8852
Pojawia się w:
Journal of Telecommunications and Information Technology
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-4 z 4

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