Temat: RF CMOS - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Evolution and recent advances in RF/microwave transistors
Autorzy:: Liou, J.J.
Schwierz, F.
Powiązania:: https://bibliotekanauki.pl/articles/308200.pdf
Data publikacji:: 2004
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: microwave devices
RF devices
heterostructures
HEMT
HBT
frequency limits
RF CMOS
Opis:: Most applications for radio frequency/microwave (thereafter called RF) transistors had been military oriented in the early 1980s. Recently, this has been changed drastically due to the explosive growth of the markets for civil wireless communication systems. This paper gives an overview on the evolution, current status, and future trend of transistors used in RF electronic systems. Important background, development and major milestones leading to modern RF transistors are presented. The concept of heterostructure, a feature frequently used in RF transistors, is discussed. The different transistor types and their figures of merit are then addressed. Finally an outlook of expected future developments and applications of RF transistors is given.
Źródło:: Journal of Telecommunications and Information Technology; 2004, 1; 99-105
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: An accurate prediction of high-frequency circuit behaviour
Autorzy:: Yoshitomi, S.
Kimijima, H.
Kojima, K.
Kokatsu, H.
Powiązania:: https://bibliotekanauki.pl/articles/308807.pdf
Data publikacji:: 2005
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: electro-magnetic simulation
SPICE
circuit test structure
RF CMOS
EKV2.6-MOS model
spiral inductor
CMOS VCO
Opis:: An accurate way to predict the behaviour of an RF analogue circuit is presented. A lot of effort is required to eliminate the inaccuracies that may generate the deviation between simulation and measurement. Efficient use of computer-aided design and incorporation of as many physical effects as possible overcomes this problem. Improvement of transistor modelling is essential, but there are many other unsolved problems affecting the accuracy of RF analogue circuit modelling. In this paper, the way of selection of accurate transistor model and the extraction of parasitic elements from the physical layout, as well as implementation to the circuit simulation will be presented using two CMOS circuit examples: an amplifier and a voltage controlled oscillator (VCO). New simulation technique, electro-magnetic (EM)-co-simulation is introduced.
Źródło:: Journal of Telecommunications and Information Technology; 2005, 1; 47-62
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

Artykuł

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