Autor: Kalisz, B. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Novel Method of Improving Electrical Properties of Thin PECVD Oxide Films by Fluorination of Silicon Surface Region by RIE in RF CF4 Plasma
Autorzy:: Kalisz, M.
Głuszko, G.
Beck, R. B.
Powiązania:: https://bibliotekanauki.pl/articles/308057.pdf
Data publikacji:: 2010
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: capacitance-voltage characteristics
current-voltage characteristics
fluorine plasma
radio frequency reactive ion etching
Opis:: This study describes a novel technique to form good quality low temperature oxide (< 350 C degree). Low temperature oxide was formed by N2O + SiH4:N2 plasma in a plasma enhanced chemical vapour deposition (PECVD) system on the silicon surface reactively etched in CF4 plasma (RIE - reactive ion etching). The fabricated oxide demonstrated excellent (for low temperature dielectric formation process) currentvoltage (I-V) characteristics, such as: low leakage current, high breakdown voltage and good reliability. Experimental results indicate that the proposed method of fluorine incorporation into the SiO2/Si inteface improves electrical parameters of MOS structures.
Źródło:: Journal of Telecommunications and Information Technology; 2010, 1; 20-24
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 2.

Tytuł:: The Effect of High Temperature Annealing on Fluorine Distribution Profile and Electro-Physical Properties of Thin Gate Oxide Fluorinated by Silicon Dioxide RIE in CF4 Plasma
Autorzy:: Kalisz, M.
Głuszko, G.
Beck, R. B.
Powiązania:: https://bibliotekanauki.pl/articles/308059.pdf
Data publikacji:: 2010
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: capacitance-voltage characteristics
current-voltage characteristics
fluorine plasma
high temperature annealing process
radio frequency reactive ion etching
Opis:: This study describes the effects of high temperature annealing performed on structures fluorinated during initial silicon dioxide reactive ion etching (RIE) process in CF4 plasma prior to the plasma enhanced chemical vapour deposition (PECVD) of the final oxide. The obtained results show that fluorine incorporated at the PECVD oxide/Si interface during RIE is very stable even at high temperatures. Application of fluorination and high temperature annealing during oxide layer fabrication significantly improved the properties of the interface (Ditmb decreased), as well as those of the bulk of the oxide layer (Qeff decreased). The integrity of the oxide (higher Vbd ) and its uniformity (Vbd distribution) are also improved.
Źródło:: Journal of Telecommunications and Information Technology; 2010, 1; 25-28
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 3.

Tytuł:: The role of fluorine-containing ultra-thin layer in controlling boron thermal diffusion into silicon
Autorzy:: Kalisz, M.
Beck, R. B.
Barcz, A.
Ćwil, M.
Powiązania:: https://bibliotekanauki.pl/articles/308657.pdf
Data publikacji:: 2007
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: fluorine
reactive ion etching
silicon fluoride
boron thermal diffusion
fluorocarbon plasma
Opis:: We have investigated the influence of silicon dioxide reactive ion etching (RIE) parameters on the composition of the polymer layer that is formed during this process on top of the etched layer, and finally, the role of this layer in high-temperature thermal diffusion of boron into silicon. The polymeric layer formed on the etched surface appeared to consist of fluorine and silicon fluoride (SiOF and SiF). Concentration of these components changes depending on the parameters of RIE process, i.e., rf power, gas pressure and etching time. The composition of this polymeric layer affects, in turn, boron thermal diffusion into silicon. With increasing rf power, the depth of boron junction is increased, while increasing time of etching process reduces boron diffusion into silicon.
Źródło:: Journal of Telecommunications and Information Technology; 2007, 3; 25-29
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

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