Autor: Firek, P. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Technology of MISFET with SiO2/BaTiO3 System as a Gate Insulator
Autorzy:: Firek, P.
Szmidt, J.
Powiązania:: https://bibliotekanauki.pl/articles/308257.pdf
Data publikacji:: 2009
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: barium titanate
I-V characteristics
MISFET structures
radio frequency plasma sputtering
Opis:: The properties of barium titanate (BaTiO3, BT), such as high dielectric constant and resistivity, allow it to find numerous applications in the field of microelectronics. In this work silicon metal-insulator-semiconductor field effect transistor (MISFET) structures with BaTiO3 thin films (containing La2O3 admixture) acting as gate insulator were investigated. The films were produced by means of radio frequency plasma sputtering (RF PS) of sintered BaTiO3 + La2O3 (2% wt.) target. In the paper transfer and output I-V, transconductance and output conductance characteristics of the obtained transistors are presented and discussed. Basic parameters of these devices, such as threshold voltage (VTH) are determined and discussed.
Źródło:: Journal of Telecommunications and Information Technology; 2009, 4; 61-64
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Influence of the deposition process parameters on electronic properties of BN films obtained by means of RF PACVD
Autorzy:: Firek, P.
Werbowy, A.
Szmidt, J.
Kwietniewski, M.
Powiązania:: https://bibliotekanauki.pl/articles/308653.pdf
Data publikacji:: 2007
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: III-nitrides
thin BN films
electronic properties
RF PACVD
Opis:: This work presents results of investigations of electronic properties of undoped boron nitride (BN) films produced on Si substrates in the course of radio frequency (rf) PACVD process with boron triethyl (C2H5)3B as the boron source. The influence of the deposition process parameters on thickness and electronic properties (resistivity r, dielectric strength EBR) of BN films based on ellipsometry and I-V curve measurements at room temperature is studied. The obtained results show that proper selection of deposition process parameters allows BN layers with the required thickness and advantageous values of r and EBR to be fabricated. BN becomes therefore an interesting material for microelectronics applications.
Źródło:: Journal of Telecommunications and Information Technology; 2007, 3; 33-36
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Properties of Al contacts to Si surface exposed in the course of plasma etching of previously grown nanocrystalline c-BN film
Autorzy:: Firek, P.
Werbowy, A.
Szmidt, J.
Olszyna, A. R.
Powiązania:: https://bibliotekanauki.pl/articles/308834.pdf
Data publikacji:: 2005
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: cubic boron nitride
plasma etching
electric contacts
Opis:: Properties of Al electric contacts to Si(p) surface exposed to fluorine-based plasma etching of nanocrystalline cubic boron nitride (c-BN) film grown previously were studied and compared to the properties of Al contacts fabricated on pristine or dry etched surface of Si(p) wafers. In addition, a part of the investigated samples was annealed in nitrogen atmosphere at the temperature of 673 K. Analysis of contract properties is based on current-voltage (I-V) measurements of the produced Al-Si structures. The presented investigations were performed in order to evaluate the efficiency of the applied plasma etching method of nanocrystalline c-BN from the viewpoint of its influence on the properties of metal contacts formed subsequently and thus on the performance of electronic devices involving the use of boron nitride.
Źródło:: Journal of Telecommunications and Information Technology; 2005, 1; 76-80
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

Artykuł

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