- Tytuł:
- A versatile tool for extraction of MOSFETs parameters
- Autorzy:
-
Tomaszewski, D.
Kociubiński, A.
Marczewski, J.
Kucharski, K.
Domański, K.
Grabiec, P. - Powiązania:
- https://bibliotekanauki.pl/articles/308856.pdf
- Data publikacji:
- 2005
- Wydawca:
- Instytut Łączności - Państwowy Instytut Badawczy
- Tematy:
-
MOSFETs parameters
SPICE
least squares method - Opis:
- Extraction of MOSFET parameters is a very important task for the purposes of MOS integrated circuits characterization and design. A versatile tool for the MOSFET parameter extraction has been developed in the Institute of Electron Technology (IET). It is used to monitor the technologies applied for fabrication of several groups of devices, e.g., CMOS ASICs, SOI pixel detectors. At present two SPICE MOSFET models (LEVEL = 1, 2) have been implemented in the extraction tool. The LEVEL = 3 model is currently being implemented. The tool combines different methods of parameter extraction based on local as well as global fitting of models to experimental data.
- Źródło:
-
Journal of Telecommunications and Information Technology; 2005, 1; 129-134
1509-4553
1899-8852 - Pojawia się w:
- Journal of Telecommunications and Information Technology
- Dostawca treści:
- Biblioteka Nauki
Artykuł