- Tytuł:
- A 65 nm CMOS Resistorless Current Reference Source with Low Sensitivity to PVT Variations
- Autorzy:
-
Łukaszewicz, M.
Borejko, T.
Pleskacz, W. A. - Powiązania:
- https://bibliotekanauki.pl/articles/397920.pdf
- Data publikacji:
- 2012
- Wydawca:
- Politechnika Łódzka. Wydział Mikroelektroniki i Informatyki
- Tematy:
-
efekt objętościowy
obwody zasilające
napięcie progowe
current reference
65 nm CMOS
body effect
power supply circuits
threshold voltage - Opis:
- This paper describes a resistorless current reference source, e.g. for fast communication interfaces. Addition of currents with opposite temperature coefficient (PTC and NTC) and body effect have been used to temperature compensation. Cascode structures have been used to improve the power supply rejection ratio. The reference current source has been designed in a GLOBALFOUNDRIES 65 nm technology. The presented circuit achieves 59 ppm/°C temperature coefficient over range of -40°C to 125°C. Reference current susceptibility to process parameters variation is ± 2.88%. The power supply rejection ratio without any filtering capacitor at 100 Hz and 10 MHz is lower than -142 dB and -131 dB, respectively.
- Źródło:
-
International Journal of Microelectronics and Computer Science; 2012, 3, 4; 119-124
2080-8755
2353-9607 - Pojawia się w:
- International Journal of Microelectronics and Computer Science
- Dostawca treści:
- Biblioteka Nauki
Artykuł