Informacja

Drogi użytkowniku, aplikacja do prawidłowego działania wymaga obsługi JavaScript. Proszę włącz obsługę JavaScript w Twojej przeglądarce.

Wyszukujesz frazę "leakage" wg kryterium: Temat


Wyświetlanie 1-5 z 5
Tytuł:
Particle Swarm Optimization Algorithm for Leakage Power Reduction in VLSI Circuits
Autorzy:
Leela Rani, V.
Madhavi Latha, M.
Powiązania:
https://bibliotekanauki.pl/articles/225990.pdf
Data publikacji:
2016
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
leakage power
PSO algorithm
genetic algorithm
minimum leakage vector
Verilog-HDL implementation
Opis:
Leakage power is the dominant source of power dissipation in nanometer technology. As per the International Technology Roadmap for Semiconductors (ITRS) static power dominates dynamic power with the advancement in technology. One of the well-known techniques used for leakage reduction is Input Vector Control (IVC). Due to stacking effect in IVC, it gives less leakage for the Minimum Leakage Vector (MLV) applied at inputs of test circuit. This paper introduces Particle Swarm Optimization (PSO) algorithm to the field of VLSI to find minimum leakage vector. Another optimization algorithm called Genetic algorithm (GA) is also implemented to search MLV and compared with PSO in terms of number of iterations. The proposed approach is validated by simulating few test circuits. Both GA and PSO algorithms are implemented in Verilog HDL and the simulations are carried out using Xilinx 9.2i. From the simulation results it is found that PSO based approach is best in finding MLV compared to Genetic based implementation as PSO technique uses less runtime compared to GA. To the best of the author’s knowledge PSO algorithm is used in IVC technique to optimize power for the first time and it is quite successful in searching MLV.
Źródło:
International Journal of Electronics and Telecommunications; 2016, 62, 2; 179-186
2300-1933
Pojawia się w:
International Journal of Electronics and Telecommunications
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Ultra-low Power FinFET SRAM Cell with Improved Stability Suitable for Low Power Applications
Autorzy:
Birla, Shilpi
Powiązania:
https://bibliotekanauki.pl/articles/226772.pdf
Data publikacji:
2019
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
FinFET
RSNM
WSNM
hold margin
subthreshold
leakage power
Opis:
In this paper, a new 11T SRAM cell using FinFET technology has been proposed, the basic component of the cell is the 6T SRAM cell with 4 NMOS access transistors to improve the stability and also makes it a dual port memory cell. The proposed cell uses a header scheme in which one extra PMOS transistor is used which is biased at different voltages to improve the read and write stability thus, helps in reducing the leakage power and active power. The cell shows improvement in RSNM (Read Static Noise Margin) with LP8T by 2.39x at sub-threshold voltage 2.68x with D6T SRAM cell, 5.5x with TG8T. The WSNM (Write Static Noise Margin) and HM (Hold Margin) of the SRAM cell at 0.9V is 306mV and 384mV. At sub-threshold operation also it shows improvement. The Leakage power reduced by 0.125x with LP8T, 0.022x with D6T SRAM cell, TG8T and SE8T. Also, impact of process variation on cell stability is discussed.
Źródło:
International Journal of Electronics and Telecommunications; 2019, 65, 4; 603-609
2300-1933
Pojawia się w:
International Journal of Electronics and Telecommunications
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
A Modified Signal Feed-Through Pulsed Flip-Flop for Low Power Applications
Autorzy:
Panahifar, E.
Hassanzadeh, A.
Powiązania:
https://bibliotekanauki.pl/articles/226160.pdf
Data publikacji:
2017
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
low power
pulsed flip-flop
delay
leakage power
dynamic power
Opis:
In this paper a modified signal feed-through pulsed flip-flop has been presented for low power applications. Signal feed-through flip-flop uses a pass transistor to feed input data directly to the output. Feed through transistor and feedback signals have been modified for delay, static and dynamic power reduction. HSPICE simulation shows 22% reduction in leakage power and 8% of dynamic power. Delay has been reduced by 14% using TSMC 90nm technology parameters. The proposed pulsed flip-flop has the lowest PDP (Power Delay Product) among other pulsed flip-flops discussed.
Źródło:
International Journal of Electronics and Telecommunications; 2017, 63, 3; 241-246
2300-1933
Pojawia się w:
International Journal of Electronics and Telecommunications
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Detecting and Locating Signal Leakages from Cable TV Networks : A Case Study
Autorzy:
Taha, Hussein
Vári, Péter
Powiązania:
https://bibliotekanauki.pl/articles/27311975.pdf
Data publikacji:
2023
Wydawca:
Polska Akademia Nauk. Czasopisma i Monografie PAN
Tematy:
MFCN
cable TV
signal leakage
drive test
digital dividend bands
700 MHz
Opis:
Since the digitalization of terrestrial television, many countries have discontinued television broadcasting in the UHF band. The freed-up frequencies are now available as digital dividends for mobile and fixed wireless access communication networks (MFCN), particularly for 4G/5G and public safety services in broadband called BBPPDR. Since cable TV still uses the UHF band, leakage from cable TV networks is the most common cause of interference in MFCN networks. Insufficient containment of the radio frequency signals transmitted through a cable system results in cable signal leakage. This article investigates the significance of controlling electromagnetic signal leaks from cable TV networks and how they impact authorized and standardized MFCN networks in the digital dividend bands. The periodic drivetest approach to detect and measure electromagnetic leakage from a cable TV system in the 700 MHz band at a site is detailed. The causes of the detected leaks and offered the appropriate procedure to repair them are also discussed. Additionally, the current measures taken in Hungary to address cable television signal leakage in the digital dividend bands are also discussed and alternative strategies for the adopted test drive approach are proposed.
Źródło:
International Journal of Electronics and Telecommunications; 2023, 69, 3; 529--536
2300-1933
Pojawia się w:
International Journal of Electronics and Telecommunications
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Low Leakage and Robust Sub-threshold SRAM Cell Using Memristor
Autorzy:
Mustaqueem, Zeba
Ansari, Abdul Quaiyum
Akram, Md Waseem
Powiązania:
https://bibliotekanauki.pl/articles/2200681.pdf
Data publikacji:
2022
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
6T SRAM cell
memristor
power dissipation
read and write operation
leakage current
stability
non-volatile circuit
Opis:
This work aims to improve the total power dissipation, leakage currents and stability without disturbing the logic state of SRAM cell with concept called sub-threshold operation. Though, sub-threshold SRAM proves to be advantageous but fails with basic 6T SRAM cell during readability and writability. In this paper we have investigated a non-volatile 6T2M (6 Transistors & 2 Memristors) sub-threshold SRAM cell working at lower supply voltage of VDD=0.3V, where Memristor is used to store the information even at power failures and restores previous data with successful read and write operation overcomes the challenge faced. This paper also proposes a new configuration of non-volatile 6T2M (6 Transistors & 2 Memristors) subthreshold SRAM cell resulting in improved behaviour in terms of power, stability and leakage current where read and write power has improved by 40% and 90% respectively when compared to 6T2M (conventional) SRAM cell. The proposed 6T2M SRAM cell offers good stability of RSNM=65mV and WSNM=93mV which is much improved at low voltage when compared to conventional basic 6T SRAM cell, and improved leakage current of 4.92nA is achieved as compared.
Źródło:
International Journal of Electronics and Telecommunications; 2022, 68, 4; 667--676
2300-1933
Pojawia się w:
International Journal of Electronics and Telecommunications
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-5 z 5

    Ta witryna wykorzystuje pliki cookies do przechowywania informacji na Twoim komputerze. Pliki cookies stosujemy w celu świadczenia usług na najwyższym poziomie, w tym w sposób dostosowany do indywidualnych potrzeb. Korzystanie z witryny bez zmiany ustawień dotyczących cookies oznacza, że będą one zamieszczane w Twoim komputerze. W każdym momencie możesz dokonać zmiany ustawień dotyczących cookies