- Tytuł:
- Characteristics and Applications of Silicon Carbide Power Devices in Power Electronics
- Autorzy:
-
Kondrath, N.
Kazimierczuk, M. K. - Powiązania:
- https://bibliotekanauki.pl/articles/226774.pdf
- Data publikacji:
- 2010
- Wydawca:
- Polska Akademia Nauk. Czytelnia Czasopism PAN
- Tematy:
-
silicon carbide (SiC)
SiC properties
high voltage
high-temperature
high-frequency applications
high-temperature electronics
wide energy band-gap semiconductors - Opis:
- Silicon carbide materials, with its high mechanical strength, high thermal conductivity, ability to operate at high temperatures, and extreme chemical inertness to most of the electrolytes, are very attractive for high-power applications. In this paper, properties, advantages, and limitations of SiC and conventional Si materials are compared. Various applications, where SiC power devices are attractive, are discussed.
- Źródło:
-
International Journal of Electronics and Telecommunications; 2010, 56, 3; 231-236
2300-1933 - Pojawia się w:
- International Journal of Electronics and Telecommunications
- Dostawca treści:
- Biblioteka Nauki
Artykuł