- Tytuł:
- The Behavioural Model of Graphene Field-effect Transistor
- Autorzy:
-
Łuszczek, Maciej
Turzyński, Marek
Świsulski, Dariusz - Powiązania:
- https://bibliotekanauki.pl/articles/1844478.pdf
- Data publikacji:
- 2020
- Wydawca:
- Polska Akademia Nauk. Czytelnia Czasopism PAN
- Tematy:
-
graphene field effect transistor
behavioural models
circuit simulation
sensors - Opis:
- The behavioural model of a graphene field-effect transistor (GFET) is proposed. In this approach the GFET element is treated as a “black box” with only external terminals available and without considering the physical phenomena directly. The presented circuit model was constructed to reflect steady-state characteristics taking also into account GFET capacitances. The authors’ model is defined by a relatively small number of equations which are not nested and all the parameters can be easily extracted. It was demonstrated that the proposed model allows to simulate the steady-state characteristics with the accuracy approximately as high as in the case of the physical model. The presented compact GFET model can be used for circuit or system-level simulations in the future.
- Źródło:
-
International Journal of Electronics and Telecommunications; 2020, 66, 4; 753-758
2300-1933 - Pojawia się w:
- International Journal of Electronics and Telecommunications
- Dostawca treści:
- Biblioteka Nauki
Artykuł