Temat: MOVPE - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: MOVPE Technology of Fe-Compensated InP Layers for the Quantum Cascade Laser Applications
Autorzy:: Badura, Mikołaj
Powiązania:: https://bibliotekanauki.pl/articles/226294.pdf
Data publikacji:: 2020
Wydawca:: Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:: MOVPE technology
optoelectronics
quantum cascade lasers
epitaxy
Opis:: Quantum cascade laser is one of the most sophisticated semiconductor devices. Its technology requires extremely high precision and layers quality. Device performance is limited by thermal extraction form laser core. One of solutions is to apply highly resistivity epitaxial material acting as insulating layer on top of the QCL. Present work describes consequent steps of elaboration of MOVPE technology of Fe-compensated InP layers for further applications in quantum cascade lasers.
Źródło:: International Journal of Electronics and Telecommunications; 2020, 66, 2; 389-394
2300-1933
Pojawia się w:: International Journal of Electronics and Telecommunications
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: AP-MOVPE Technology and Characterization of InGaAsN p-i-n Subcell for InGaAsN/GaAs Tandem Solar Cell
Autorzy:: Dawidowski, W.
Ściana, B.
Zborowska-Lindert, I.
Mikolásek, M.
Latkowska, M.
Radziewicz, D.
Pucicki, D.
Bielak, K.
Badura, M.
Kováč, J.
Tłaczała, M.
Powiązania:: https://bibliotekanauki.pl/articles/226630.pdf
Data publikacji:: 2014
Wydawca:: Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:: dilute nitrides
AP MOVPE
subcell
tandem solar cell
J-V characteristics
Opis:: Tandem (two p-n junctions connected by tunnel junction) and multijunction solar cells (MJSCs) based on AIIIBV semiconductor compounds and alloys are the most effective photovoltaic devices. Record efficiency of the MJSCs exceeds 44% under concentrated sunlight. Individual subcells connected in series by tunnel junctions are crucial components of these devices. In this paper we present atmospheric pressure metal organic vapour phase epitaxy (AP-MOVPE) of InGaAsN based subcell for InGaAsN/GaAs tandem solar cell. The parameters of epitaxial structure (optical and electrical), fabrication process of the test solar cell devices and current-voltage (J-V) characteristics are presented and discussed.
Źródło:: International Journal of Electronics and Telecommunications; 2014, 60, 2; 151-156
2300-1933
Pojawia się w:: International Journal of Electronics and Telecommunications
Dostawca treści:: Biblioteka Nauki

Artykuł

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