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Wyświetlanie 1-2 z 2
Tytuł:
Application of the Averaged Model of the Diode-transistor Switch for Modelling Characteristics of a Boost Converter with an IGBT
Autorzy:
Górecki, Paweł
Powiązania:
https://bibliotekanauki.pl/articles/226814.pdf
Data publikacji:
2020
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
DC-DC converter
IGBT
boost converter
averaged model
diode-transistor switch
modelling
SPICE
Opis:
DC-DC converters are popular switch-mode electronic circuits used in power supply systems of many electronic devices. Designing such converters requires reliable computation methods and models of components contained in these converters, allowing for accurate and fast computations of their characteristics. In the paper, a new averaged model of a diode-transistor switch containing an IGBT is proposed. The form of the developed model is presented. Its accuracy is verified by comparing the computed characteristics of the boost converter with the characteristics computed in SPICE using a transient analysis and literature models of a diode and an IGBT. The obtained results of computations proved the usefulness of the proposed model.
Źródło:
International Journal of Electronics and Telecommunications; 2020, 66, 3; 555-560
2300-1933
Pojawia się w:
International Journal of Electronics and Telecommunications
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Design, Analysis and Comparison of Si- and GaN-Based DC-DC Wide-Input-Voltage-Range Buck-Boost Converters
Autorzy:
Koszel, Mikołaj
Grzejszczak, Piotr
Nowatkiewicz, Bartosz
Wolski, Kornel
Powiązania:
https://bibliotekanauki.pl/articles/1844528.pdf
Data publikacji:
2021
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
buck-boost
synchronous dc-dc converters
GaN
high efficiency
ultracapacitor
power losses
SEPIC
Ćuk
Opis:
The purpose of the article is a comparison between DC/DC topologies with a wide input voltage range. The research also explains how the implementation of GaN E-HEMT transistors influences the overall efficiency of the converter. The article presents a process of selection of the most efficient topology for stabilization of the battery storage voltage (9 V – 36 V) at the level of 24 V, which enables the usage of ultracapacitor energy storage in a wide range of applications, e.g., in automated electric vehicles. In order to choose the most suitable topology, simulation and laboratory research were conducted. The two most promising topologies were selected for verification in the experimental model. Each of the converters was constructed in two versions: with Si and with GaN E-HEMT transistors. The paper presents experimental research results that consist of precise power loss measurements and thermal analysis. The performance with an increased switching frequency of converters was also examined.
Źródło:
International Journal of Electronics and Telecommunications; 2021, 67, 3; 337-343
2300-1933
Pojawia się w:
International Journal of Electronics and Telecommunications
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-2 z 2

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