- Tytuł:
- AP-MOVPE Technology and Characterization of InGaAsN p-i-n Subcell for InGaAsN/GaAs Tandem Solar Cell
- Autorzy:
-
Dawidowski, W.
Ściana, B.
Zborowska-Lindert, I.
Mikolásek, M.
Latkowska, M.
Radziewicz, D.
Pucicki, D.
Bielak, K.
Badura, M.
Kováč, J.
Tłaczała, M. - Powiązania:
- https://bibliotekanauki.pl/articles/226630.pdf
- Data publikacji:
- 2014
- Wydawca:
- Polska Akademia Nauk. Czytelnia Czasopism PAN
- Tematy:
-
dilute nitrides
AP MOVPE
subcell
tandem solar cell
J-V characteristics - Opis:
- Tandem (two p-n junctions connected by tunnel junction) and multijunction solar cells (MJSCs) based on AIIIBV semiconductor compounds and alloys are the most effective photovoltaic devices. Record efficiency of the MJSCs exceeds 44% under concentrated sunlight. Individual subcells connected in series by tunnel junctions are crucial components of these devices. In this paper we present atmospheric pressure metal organic vapour phase epitaxy (AP-MOVPE) of InGaAsN based subcell for InGaAsN/GaAs tandem solar cell. The parameters of epitaxial structure (optical and electrical), fabrication process of the test solar cell devices and current-voltage (J-V) characteristics are presented and discussed.
- Źródło:
-
International Journal of Electronics and Telecommunications; 2014, 60, 2; 151-156
2300-1933 - Pojawia się w:
- International Journal of Electronics and Telecommunications
- Dostawca treści:
- Biblioteka Nauki
Artykuł