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    Wyświetlanie 1-2 z 2
    Tytuł:
    Optical investigations of ZnO layers affected by some selected gases in the aspect of their application in optical gas sensors
    Autorzy:
    Struk, P.
    Pustelny, T.
    Gołaszewska, K.
    Borysiewicz, M. A.
    Piotrowska, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/200967.pdf
    Data publikacji:
    2015
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    ZnO
    semiconductor
    gas sensors
    Zno
    czujniki gazu
    półprzewodnik
    Opis:
    The paper presents the results of investigations of zinc oxide (ZnO) layers as a potential sensing material, being affected by certain selected gaseous environments. The investigations concerned the optical transmission through thin ZnO layers in wide spectral ranges from ultraviolet to the near infrared. The effect of the gaseous environment on the optical properties of zinc oxide layers with a thickness of ~ 400 nm was analyzed applying various technologies of ZnO manufacturing. Three kinds of ZnO layers were exposed to the effect of the gaseous environment, viz.: layers with relatively slight roughness (RMS several nm), layers with a considerable surface roughness (RMS some score of nm) and layers characterized by porous ZnO structures. The investigations concerned spectral changes in the transmission properties of the ZnO layers due to the effect of such gases as: ammonia (NH3), hydrogen (H2), and nitrogen dioxide (NO2) in the atmosphere of synthetic air. The obtained results indicated the possibility of applying porous ZnO layered structures in optical gas sensors.
    Źródło:
    Bulletin of the Polish Academy of Sciences. Technical Sciences; 2015, 63, 4; 829-836
    0239-7528
    Pojawia się w:
    Bulletin of the Polish Academy of Sciences. Technical Sciences
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Calculations of transport parameters in semiconductor superlattices based on the Greens’ functions method in different Hamiltonian representations
    Autorzy:
    Mączka, M.
    Hałdaś, G.
    Powiązania:
    https://bibliotekanauki.pl/articles/202060.pdf
    Data publikacji:
    2019
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    semiconductor superlattices
    NEGF formalism
    Wannier functions
    nadprzewodnik
    półprzewodnik
    Formalizm
    funkcja Wanniera
    Opis:
    Two methods for calculating transport parameters in semiconductor superlattices by applying Green’s functions are compared in the paper. For one of the methods, the Wannier functions method, where computations in the complex space and Wannier functions base are required, the Hamiltonian matrix is small in size and its elements depend solely on the energy. For the real space method, as it operates in the floating point domain and uses the Hamiltonian containing the elements dependent both on energy and position, the Hamiltonian matrix is larger in size. The size makes the method computationally challenging. To find the consequences of choosing one of the methods, a?direct comparison between the computations, obtained for both methods with the same input parameters, was undertaken. The differences between the results are shown and explained. Selected simulations allowed us to discuss advantages and disadvantages of both methods. The calculations include transport parameters such as the density of states and the occupation functions, with regard to scattering processes where the self-consistent Born approximation was used, as well as the spatial distribution of electron concentration for two superlattices structures. The numerical results are obtained within the non-equilibrium Green’s functions formalism by solving the Dyson and the Keldysh equations.
    Źródło:
    Bulletin of the Polish Academy of Sciences. Technical Sciences; 2019, 67, 3; 631-641
    0239-7528
    Pojawia się w:
    Bulletin of the Polish Academy of Sciences. Technical Sciences
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-2 z 2

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