Informacja

Drogi użytkowniku, aplikacja do prawidłowego działania wymaga obsługi JavaScript. Proszę włącz obsługę JavaScript w Twojej przeglądarce.

Wyszukujesz frazę "CMOS" wg kryterium: Temat


Wyświetlanie 1-8 z 8
Tytuł:
On analog comparators for CMOS digital pixel applications. A comparative study
Autorzy:
Jendernalik, W.
Powiązania:
https://bibliotekanauki.pl/articles/200565.pdf
Data publikacji:
2016
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
CMOS image sensor
CMOS digital pixel
analog comparator
fixed-pattern noise
FPN
CMOS
matryca świałoczuła CMOS
piksel cyfrowy
komparator analogowy
hałas ustalony
Opis:
Voltage comparator is the only - apart from the light-to-voltage converter - analog component in the digital CMOS pixel. In this work, the influence of the analog comparator nonidealities on the performance of the digital pixel has been investigated. In particular, two versions of the digital pixel have been designed in 0.35 μm CMOS technology, each using a different type of analog comparator. The properties of both versions have been compared. The first pixel utilizes a differential comparator with the increased size and improved electrical performance. The second structure is based on a very simple non-differential comparator with a reduced size and degraded performance. Theoretical analysis of the comparator nonideality effect on the quality of the image obtained from the digital pixel matrix as well as simulation results are provided.
Źródło:
Bulletin of the Polish Academy of Sciences. Technical Sciences; 2016, 64, 2; 271-278
0239-7528
Pojawia się w:
Bulletin of the Polish Academy of Sciences. Technical Sciences
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Multiple output CMOS current amplifier
Autorzy:
Pankiewicz, B.
Powiązania:
https://bibliotekanauki.pl/articles/201141.pdf
Data publikacji:
2016
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
current amplifier
current follower
current mirror
CMOS technology
wzmacniacz prądowy
prąd
technologia CMOS
Opis:
In this paper the multiple output current amplifier basic cell is proposed. The triple output current mirror and current follower circuit are described in detail. The cell consists of a split nMOS differential pair and accompanying biasing current sources. It is suitable for low voltage operation and exhibits highly linear DC response. Through cell devices scaling, not only unity, but also any current gains are achievable. As examples, a current amplifier and bandpass biquad section designed in CMOS TSMC 90nm technology are presented. The current amplifier is powered from a 1.2V supply. MOS transistors scaling was chosen to obtain output gains equal to -2, 1 and 2. Simulated real gains are -1.941, 0.966 and 1.932 respectively. The 3dB passband obtained is above 20MHz, while current consumption is independent of input and output currents and is only 7.77μA. The bandpass biquad section utilises the previously presented amplifier, two capacitors and one resistor, and has a Q factor equal to 4 and pole frequency equal to 100 kHz.
Źródło:
Bulletin of the Polish Academy of Sciences. Technical Sciences; 2016, 64, 2; 301-306
0239-7528
Pojawia się w:
Bulletin of the Polish Academy of Sciences. Technical Sciences
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Automatic tuning of a resonant circuit in wireless power supply systems for biomedical sensors
Autorzy:
Blakiewicz, G.
Jakusz, J.
Jendernalik, W.
Szczepański, S.
Powiązania:
https://bibliotekanauki.pl/articles/201440.pdf
Data publikacji:
2016
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
CMOS circuits
automatic tuning
impedance matching
resonant circuit
układy CMOS
tuning
impedancja
obwód rezonansowy
Opis:
In this paper, a tuning method of a resonant circuit suited for wireless powering of miniature endoscopic capsules is presented and discussed. The method allows for an automatic tuning of the resonant frequency and matching impedance of a full wave rectifier loading the resonant circuit. Thereby, the receiver tunes so as to obtain the highest power efficiency under given conditions of transmission. A prototype receiver for wireless power reception, fabricated in in AMS CMOS 0.35 μm technology, was used to verify correct operation of the proposed tuning. The prototype system produces a stable supply voltage, adjustable in the range of 1.2–1.8 V at a maximum output current of 100–67 mA, which is sufficient to power a typical endoscopic capsule.
Źródło:
Bulletin of the Polish Academy of Sciences. Technical Sciences; 2016, 64, 3; 641-646
0239-7528
Pojawia się w:
Bulletin of the Polish Academy of Sciences. Technical Sciences
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Overheat protection circuit for high frequency processors
Autorzy:
Frankiewicz, M.
Kos, A.
Powiązania:
https://bibliotekanauki.pl/articles/200992.pdf
Data publikacji:
2012
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
PTAT
overheat
CMOS
VLSI
full-custom design
Opis:
The paper describes design and structure of the overheat protection circuit based on the PTAT sensors. The digital core of the system is driven by a 3-bit information generated by the structure. As a result, behaviour of the core differs for each temperature. The circuit was designed in LF CMOS 0.15 ěm technology using full-custom technique. The presented paper focuses especially on the structure of the overheat protection circuit and simulations results of the functional blocks of the system. Layout and some parameters of the circuit are also considered.
Źródło:
Bulletin of the Polish Academy of Sciences. Technical Sciences; 2012, 60, 1; 55-59
0239-7528
Pojawia się w:
Bulletin of the Polish Academy of Sciences. Technical Sciences
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Design of a nanoswitch in 130 nm CMOS technology for 2.4 GHz wireless terminals
Autorzy:
Bhuiyan, M. A.
Reaz, M. B. I.
Jalil, J.
Rahman, L. F.
Powiązania:
https://bibliotekanauki.pl/articles/200508.pdf
Data publikacji:
2014
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
CMOS
ISM band
nanometer
transceivers
T/R switch
wireless
Opis:
This paper proposes a transmit/receive (T/R) nanoswitch in 130 nm CMOS technology for 2.4 GHz ISM band transceivers. It exhibits 1.03-dB insertion loss, 27.57-dB isolation and a power handling capacity (P1 dB) of 36.2-dBm. It dissipates only 6.87 μW power for 1.8/0 V control voltages and is capable of switching in 416.61 ps. Besides insertion loss and isolation of the nanoswitch is found to vary by 0.1 dB and 0.9 dB, respectively for a temperature change of 125°C. Only the transistor W/L optimization and resistive body floating technique is used for such lucrative performances. Besides absence of bulky inductors and capacitors in the schematic circuit help to attain the smallest chip area of 0.0071 mm2 which is the lowest ever reported in this frequency band. Therefore, simplicity and low chip area of the circuit trim down the cost of fabrication without compromising the performance issue.
Źródło:
Bulletin of the Polish Academy of Sciences. Technical Sciences; 2014, 62, 2; 399-406
0239-7528
Pojawia się w:
Bulletin of the Polish Academy of Sciences. Technical Sciences
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
CMOS realisation of analogue processor for early vision processing
Autorzy:
Jendernalik, W.
Jakusz, J.
Blakiewicz, G.
Piotrowski, R.
Szczepański, S.
Powiązania:
https://bibliotekanauki.pl/articles/202320.pdf
Data publikacji:
2011
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
CMOS imager
analogue processor array
smart sensor
vision chip
Opis:
The architecture concept of a high-speed low-power analogue vision chip, which performs low-level real-time image algorithms is presented. The proof-of-concept prototype vision chip containing 32 �~ 32 photosensor array and 32 analogue processors is fabricated using a 0.35 mikrom CMOS technology. The prototype can be configured to register and process images with very high speed, reaching 2000 frames per second, or achieve very low power consumption, several mikroW. Finally, the experimental results are presented and discussed.
Źródło:
Bulletin of the Polish Academy of Sciences. Technical Sciences; 2011, 59, 2; 141-147
0239-7528
Pojawia się w:
Bulletin of the Polish Academy of Sciences. Technical Sciences
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
CMOS implementation of an analogue median filter for image processing in real time
Autorzy:
Jendernalik, W.
Jakusz, J.
Blakiewicz, G.
Szczepański, S.
Powiązania:
https://bibliotekanauki.pl/articles/202129.pdf
Data publikacji:
2013
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
analogue CMOS circuits
early vision processing
median filter
low-power
Opis:
An analogue median filter, realised in a 0.35 μm CMOS technology, is presented in this paper. The key advantages of the filter are: high speed of image processing (50 frames per second), low-power operation (below 1.25 mW under 3.3 V supply) and relatively high accuracy of signal processing. The presented filter is a part of an integrated circuit for image processing (a vision chip), containing: a photo-sensor matrix, a set of analogue pre-processors, and interface circuits. The analysis of the main parameters of the considered median filter is presented. The discussion of important limitations in the operation of the filter due to the restrictions imposed by CMOS technology is also presented.
Źródło:
Bulletin of the Polish Academy of Sciences. Technical Sciences; 2013, 61, 3; 725-730
0239-7528
Pojawia się w:
Bulletin of the Polish Academy of Sciences. Technical Sciences
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Technique to improve CMRR at high frequencies in CMOS OTA-C filters
Autorzy:
Blakiewicz, G.
Powiązania:
https://bibliotekanauki.pl/articles/200504.pdf
Data publikacji:
2013
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
common-mode rejection ratio
CMRR
CMOS
OTA
differential pair
OTA-C filters
component mismatch
Opis:
In this paper a technique to improve the common-mode rejection ratio (CMRR) at high frequencies in the OTA-C filters is proposed. The technique is applicable to most OTA-C filters using CMOS operational transconductance amplifiers (OTA) based on differential pairs. The presented analysis shows that a significant broadening of CMRR bandwidth can be achieved by using a differential pair with the bodies of transistors connected to AC ground, instead of using a pair with the bodies connected to the sources. The key advantages of the technique are: no increase in power consumption (except for an optional tuning circuit), a small increase of a chip area, a slight modification of the original filter. The simulation results for exemplary OTAs and a low-pass filter, designed in a 0.35 μm CMOS process, show the possibility of broadening the CMRR bandwidth several times.
Źródło:
Bulletin of the Polish Academy of Sciences. Technical Sciences; 2013, 61, 3; 697-703
0239-7528
Pojawia się w:
Bulletin of the Polish Academy of Sciences. Technical Sciences
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-8 z 8

    Ta witryna wykorzystuje pliki cookies do przechowywania informacji na Twoim komputerze. Pliki cookies stosujemy w celu świadczenia usług na najwyższym poziomie, w tym w sposób dostosowany do indywidualnych potrzeb. Korzystanie z witryny bez zmiany ustawień dotyczących cookies oznacza, że będą one zamieszczane w Twoim komputerze. W każdym momencie możesz dokonać zmiany ustawień dotyczących cookies