Wszystkie pola: ITO - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: ITO layer as an optical confinement for nitride edge-emitting lasers
Autorzy:: Kuc, M.
Sokół, A. K.
Piskorski, Ł.
Dems, M.
Wasiak, M.
Sarzała, R. P.
Czyszanowski, T.
Powiązania:: https://bibliotekanauki.pl/articles/200863.pdf
Data publikacji:: 2020
Wydawca:: Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:: edge-emitting lasers
InGaN/GaN
computer simulation
ITO
optical confinement
Opis:: This paper presents the results of a numerical analysis of nitride-based edge-emitting lasers with an InGaN/GaN active region designed for continuous wave room temperature emission of green and blue light. The main goal was to investigate whether the indium thin oxide (ITO) layer can serve as an effective optical confinement improving operation of these devices. Simulations were performed with the aid of a self-consistent thermal-electrical-optical model. Results obtained for green- and blue-emitting lasers were compared. The ITO layer in the p-type cladding was found to effectively help confine the laser mode in the active regions of the devices and to decrease the threshold current density.
Źródło:: Bulletin of the Polish Academy of Sciences. Technical Sciences; 2020, 68, 1; 147-154
0239-7528
Pojawia się w:: Bulletin of the Polish Academy of Sciences. Technical Sciences
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 2.

Tytuł:: Optimised magnetron sputtering method for the deposition of indium tin oxide layers
Autorzy:: Musztyfaga-Staszuk, Małgorzata
Pudiš, Dušan
Socha, Robert
Gawlińska-Nęcek, Katarzyna
Panek, Piotr
Powiązania:: https://bibliotekanauki.pl/articles/2090684.pdf
Data publikacji:: 2021
Wydawca:: Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:: In2O3
Sn2O
ITO
magnetron sputtering method
metoda rozpylania magnetronowego
Opis:: The article presents the method of magnetron sputtering for the deposition of conductive emitter coatings in semiconductor structures. The layers were applied to a silicon substrate. For optical investigations, borosilicate glasses were used. The obtained layers were subjected to both optical and electrical characterisation, as well as structural investigations. The layers on silicon substrates were tested with the four-point probe to find the dependence of resistivity on the layer thickness. The analysis of the elemental composition of the layer was conducted using a scanning electron microscope equipped with an EDS system. The morphology of the layers was examined with the atomic force microscope (AFM) of the scanning electron microscope (SEM) and the structures with the use of X-ray diffraction (XRD). The thickness of the manufactured layers was estimated by ellipsometry. The composition was controlled by selecting the target and the conditions of the application, i.e. the composition of the plasma atmosphere and the power of the magnetrons. Based on the obtained results, this article aims to investigate the influence of the manufacturing method and the selected process parameter on the optical properties of thin films, which should be characterised by the highest possible value of the transmission coefficient (>85–90%) and high electrical conductivity.
Źródło:: Bulletin of the Polish Academy of Sciences. Technical Sciences; 2021, 69, 6; e139005, 1--6
0239-7528
Pojawia się w:: Bulletin of the Polish Academy of Sciences. Technical Sciences
Dostawca treści:: Biblioteka Nauki

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