Informacja

Drogi użytkowniku, aplikacja do prawidłowego działania wymaga obsługi JavaScript. Proszę włącz obsługę JavaScript w Twojej przeglądarce.

Wyszukujesz frazę "Kwaśnicki, Paweł" wg kryterium: Autor


Wyświetlanie 1-1 z 1
Tytuł:
Alternative method of making electrical connections in the 1st and 3rd generation modules as an effective way to improve module efficiency and reduce production costs
Autorzy:
Kwaśnicki, Paweł
Gronba-Chyła, Anna
Generowicz, Agnieszka
Ciuła, Józef
Wiewiórska, Iwona
Gaska, Krzysztof
Powiązania:
https://bibliotekanauki.pl/articles/27312219.pdf
Data publikacji:
2023
Wydawca:
Polska Akademia Nauk. Czasopisma i Monografie PAN
Tematy:
photovoltaics
busbars
DSSC
BIPV
solar module
Opis:
In this work, we propose a new method for manufacturing busbars in photovoltaic modules for different solar cell generations, focusing on 1st and 3rd generations. The method is based on high-pressure spray coating using nanometric metallic powder. Our focus is primarily on optimizing conductive paths for applications involving conductive layers used in 3rd generation solar cells, such as quantum dot solar cell, dye-sensitized solar cell, and silicon-based solar cells on glass-glass architecture for buildingintegrated photovoltaic. The advantages of the proposed method include the possibility of reducing the material quantity in the conductive paths and creating various shapes on the surface, including bent substrates. This paper examines the influence of the proposed high-pressure spraying technique using metallic particles on the morphology of the resulting conductive paths, interface characteristics, and electrical parameters. Conductive paths were created on four different layers commonly used in photovoltaic systems, including transparent conductive oxide, Cu, Ti, and atomic layer deposition processed Al2O3. The use of high-pressure technology enables the production of conductive layers with strong adhesion to the substrate and precise control of the spatial parameters of conductive paths. Furthermore, the temperature recorded during the deposition process does not exceed 385 K, making this technique suitable for various types of substrates, including glass and silicon. Additionally, the produced layers exhibit low resistance, measuring less than 0.3 Ω. Finally, the mechanical resistance, as determined through tearing tests, as well as environmental and time stability, have been confirmed for the produced paths.
Źródło:
Archives of Thermodynamics; 2023, 44, 3; 179--200
1231-0956
2083-6023
Pojawia się w:
Archives of Thermodynamics
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-1 z 1

    Ta witryna wykorzystuje pliki cookies do przechowywania informacji na Twoim komputerze. Pliki cookies stosujemy w celu świadczenia usług na najwyższym poziomie, w tym w sposób dostosowany do indywidualnych potrzeb. Korzystanie z witryny bez zmiany ustawień dotyczących cookies oznacza, że będą one zamieszczane w Twoim komputerze. W każdym momencie możesz dokonać zmiany ustawień dotyczących cookies