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Wyszukujesz frazę "Zięba, K." wg kryterium: Autor


Wyświetlanie 1-2 z 2
Tytuł:
Determination of EVA Cross-Linking Degree after Lamination Process by Extraction and Optical Transmission Measuring
Autorzy:
Gawlińska, K.
Drabczyk, K.
Starowicz, Z.
Sobik, P.
Drabczyk, B.
Zięba, P.
Powiązania:
https://bibliotekanauki.pl/articles/352591.pdf
Data publikacji:
2018
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
photovoltaics
silicon solar cells
lamination
gel content test
cross-linking degree
Opis:
The ethylene vinyl acetate (EVA) is widely used for solar modules encapsulation. During lamination process EVA melts and chemical bonds between polymer chains are created. Its number is tightly related to cross-linking degree and it is consider as a major quality reference for module encapsulation. The lamination can be described as a process with two stages: melting and curing where the typical temperature for curing is in the range from 145 to 175°C. In the present study, for the first time, comparison of three commercial available EVA foils with low curing temperature EVA (EVA LOW). For this reason, the temperature of following lamination processes was set from a range from 115 to 175°C. The behavior of cured EVA films under investigation EVA was determined with two approaches: with extraction and with optical methods. The results indicate the applicability of these methods for the EVA cross-linking characterization. Finally, the extraordinary behavior of EVA LOW foil was noticed.
Źródło:
Archives of Metallurgy and Materials; 2018, 63, 2; 833-838
1733-3490
Pojawia się w:
Archives of Metallurgy and Materials
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Black Silicon Obtained in Two-Step Short Wet Etching as a Texture for Silicon Solar Cells - Surface Microstructure and Optical Properties Studies
Autorzy:
Kulesza-Matlak, G.
Gawlińska, K.
Starowicz, Z.
Sypień, A.
Drabczyk, K.
Drabczyk, B.
Lipiński, M.
Zięba, P.
Powiązania:
https://bibliotekanauki.pl/articles/352242.pdf
Data publikacji:
2018
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
black silicon
low temperature texturization
silicon nanowire
solar cells
multicrystalline silicon
Opis:
In this study a two-step short wet etching was implemented for the black silicon formation. The proposed structure consists of two steps. The first step: wet acidic etched pits-like morphology with a quite new solution of lowering the texturization temperature and second step: wires structure obtained by a metal assisted etching (MAE). The temperature of the process was chosen due to surface development control and surface defects limitation during texturing process. This allowed to maintain better minority carrier lifetime compared to etching in ambient temperature. On the top of the acidic texture the wires were formed with optimized height of 350 nm. The effective reflectance of presented black silicon structure in the wavelength range of 300-1100 nm was equal to 3.65%.
Źródło:
Archives of Metallurgy and Materials; 2018, 63, 2; 1009-1017
1733-3490
Pojawia się w:
Archives of Metallurgy and Materials
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-2 z 2

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