Temat: DOT - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Spatio-Temporal Dynamics of Carrier Capture Processes: Simulation of Optical Signals
Autorzy:: Lengers, F.
Rosati, R.
Kuhn, T.
Reiter, D.
Powiązania:: https://bibliotekanauki.pl/articles/1033096.pdf
Data publikacji:: 2017-08
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: quantum dot
carrier capture
optical signals
Opis:: We perform simulations of time-resolved optical experiments of carrier-capture processes in a quantum wire-dot system. Scattering of charge carriers with optical phonons of the quantum wire can result in transitions from the continuum states of the quantum wire to discrete states of the quantum dot. We treat the scattering of carriers with optical phonons within a Lindblad single-particle approach. By considering the coupling of carriers to a light field we are able to simulate pump-probe experiments which are shown to be capable of measuring the captured populations. We further discuss the influence of the Coulomb interaction on the obtained spectra.
Źródło:: Acta Physica Polonica A; 2017, 132, 2; 372-375
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Dynamical and Steady State Processes of Probe Absorption-Dispersion in a Four-Level Quantum Dot Nanostructure
Autorzy:: Asadi Amirabadi, E.
Jamshidnejad, M.
Miraboutalebi, S.
Asadpour, S.
Powiązania:: https://bibliotekanauki.pl/articles/1032323.pdf
Data publikacji:: 2017-06
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: quantum dot nanostructure
absorption
dispersion
optical transient processes
Opis:: In this paper, we investigated the transient electron population and the transient behaviour of the dispersion, absorption and refractive property of weak probe light in a four-level InGaN/GaN quantum dot nanostructure. In order to achieve the wave functions and their corresponding energy levels of the mentioned quantum dot nanostructure, the Schrödinger and Poisson equations is solved selfconsistently for carriers (here electron) in quantum dot. Our findings show that the properties of transient processes can be dramatically affected by parameters such as intensity, detuning and relative phase of applied fields. Our proposed scheme provides a realistic model for transient control of refraction index properties in a quantum dot nanostructure. These results may have potential applications in high speed optical switch for quantum information technologies.
Źródło:: Acta Physica Polonica A; 2017, 131, 6; 1460-1465
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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