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Wyświetlanie 1-15 z 16
Tytuł:
Diagnostics of Helium-Argon Arc Discharge Plasma Based on Spectral Line Shape Measurements
Autorzy:
Wujec, T.
Musiełok, J.
Powiązania:
https://bibliotekanauki.pl/articles/1994650.pdf
Data publikacji:
1999-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
32.30.-r
32.70.-n
52.25.-b
Opis:
Electron densities and ion (gas) temperatures on the axis of an arc discharge plasma, produced at atmospheric pressure in a gas mixture of 95% helium and 5% argon, are determined at two arc currents. The evaluation of both main plasma parameters is based on line shape measurements, the ion temperature on the Doppler broadening of selected ArII lines, while the electron density on the Stark broadening of the hydrogen H$\text{}_{β}$ line which appear in the spectrum due to hydrogen traces in the applied gases. The significance of reliable plasma diagnostics for determination of atomic structure data is discussed.
Źródło:
Acta Physica Polonica A; 1999, 95, 2; 221-230
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Quantum Spin Hall Effect in Strained (111)-Oriented SnSe Layers
Autorzy:
Safaei, S.
Galicka, M.
Kacman, P.
Buczko, R.
Powiązania:
https://bibliotekanauki.pl/articles/1398549.pdf
Data publikacji:
2016-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.jd
71.20.-b
73.20.-r
Opis:
Recently, the quantum spin Hall effect has been predicted in (111)-oriented thin films of SnSe and SnTe topological crystalline insulators. It was shown that in these films the energy gaps in the two-dimensional band spectrum depend in an oscillat ory fashion on the layer thickness - the calculated topological invariant indexes and edge state spin polarizations show that for films 20-40 monolayers thick a two-dimensional topological insulator phase appears. Edge states with the Dirac cones with opposite spin polarization in their two branches are obtained for both materials. However, for all but the (111)-oriented SnTe films with an even number of monolayers an overlapping of bands in Γ̅ and M̅ diminishes the final band gap and the edge states appear either against the background of the bands or within a very small energy gap. Here we show that this problem in SnSe films can be removed by applying an appropriate strain. This should enable observation of the quantum spin Hall effect also in SnSe layers.
Źródło:
Acta Physica Polonica A; 2016, 129, 1a; A-150-A-152
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electronic Transport through a Bending Contact
Autorzy:
Schröter, U.
Powiązania:
https://bibliotekanauki.pl/articles/2044664.pdf
Data publikacji:
2006-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.23.-b
74.50.+r
74.45.+c
Opis:
The so-called "break-junction technique" allows us to realize contacts only single-atom in diameter at their thinnest point. Electronic transport through such narrow constrictions shows a quantum mechanical signature which is well described in a transport channel picture. Each individual contact is characterized by an ensemble of channel transmission probabilities. Preferred total conductance values as well as the number of channels, however, turn out to be universal for the material investigated, despite the lack of control of the exact contact geometry.
Źródło:
Acta Physica Polonica A; 2006, 109, 3; 305-310
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Calculation of Population Densities of Excited CI and CII Levels in Helium and Argon Plasmas Containing Small Admixtures of $\text{CO}_{2}$ - Importance to Analysis of Radiation Emitted from Plasmas of Axial Symmetry
Autorzy:
Bacławski, A.
Musielok, J.
Powiązania:
https://bibliotekanauki.pl/articles/1963254.pdf
Data publikacji:
1997-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
32.30.-r
52.25.-b
52.25.Rv
Opis:
Population densities of excited CI and CII levels are calculated in helium and argon plasmas containing small admixtures of $\text{CO}_{2}$. Calculations are performed for a total pressure of 1 atmosphere, in a temperature interval from 8000 K to 40000 K, assuming local thermal equilibrium (LTE) and partial local thermal equilibrium (pLTE) conditions. Normal temperatures are obtained for selected excited CI and CII levels. The results are applied to a helium plasma with traces of $\text{CO}_{2}$, of cylindrical symmetry with presumed radial temperature distribution. Effective intensities of CI and CII spectral lines, corresponding to side-on radiance measurements along the cylinder diameter are evaluated. On hand of these effective line intensities and applying the Boltzmann plot method effective temperatures are evaluated and compared with the presumed temperature distribution.
Źródło:
Acta Physica Polonica A; 1997, 91, 3; 519-529
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Surface Potential Investigations of Indium Phosphate Real Surfaces by Means of Transverse Acoustoelectric Method
Autorzy:
Pustelny, T.
Powiązania:
https://bibliotekanauki.pl/articles/1943942.pdf
Data publikacji:
1995-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.20.-r
43.35.+d
72.50.+b
Opis:
A method of surface potential determination in semiconductors by means of the transverse acoustoelectric effect is described. The results of theoretical analysis of the transverse acoustoelectric voltage versus surface potential and different surface electrical parameters in indium phosphate single crystals are presented. The experimental results of the surface potential investigations have been obtained after various surface treatments in InP(110) and InP(100) crystals. A strong influence of the chemical and mechanical surface treatments upon the surface potential values has been observed from the measurements. The surface InP(110) was more sensitive to different surface treatments. The changes of the surface potential values were about two times greater for InP(110) than for InP(100) samples. The surface potentials after surface treatments obtained by the acoustics method were of the range -0.08 [V] to -0.22 [V].
Źródło:
Acta Physica Polonica A; 1995, 88, 6; 1123-1132
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Spontaneous Currents in a Ferromagnet-Normal Metal-Superconductor Trilayer
Autorzy:
Krawiec, M.
Annett, J. F.
Györffy, B. L.
Powiązania:
https://bibliotekanauki.pl/articles/2046734.pdf
Data publikacji:
2006-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.25.-b
74.50.+r
75.75.+a
Opis:
We discuss the ground state properties of the system composed of a normal metal sandwiched between ferromagnet and superconductor within a tight binding Hubbard model. We solved the spin-polarized Hartree-Fock-Gorkov equations together with the Maxwell equation (Ampere's law) and found a proximity induced Fulde-Ferrell-Larkin-Ovchinnikov state in this system. Here we show that the inclusion of the normal metal layer in between those subsystems does not necessarily lead to the suppression of the Fulde-Ferrell-Larkin-Ovchinnikov phase. Moreover, we found that depending on the thickness of the normal metal slab the system can be switched periodically between the state with the spontaneous current flowing to that one with no current. All these effects can be explained in terms of the Andreev bound states formed in such structures.
Źródło:
Acta Physica Polonica A; 2006, 109, 4-5; 507-512
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Determination of Some Kinetic Parameters of Fast Surface States in Silicon Single Crystals by Means of Surface Acoustic Wave Method
Autorzy:
Pustelny, T.
Opilski, A.
Pustelny, B.
Powiązania:
https://bibliotekanauki.pl/articles/1811565.pdf
Data publikacji:
2008-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.50.+b
77.65.Dq
73.50.Rb
73.20.-r
73.61.-r
Opis:
The paper presents the acoustic method for determining some parameters of fast surface states in semiconductors. This method uses the interactions of the phonon-electron type for determining both the effective carrier lifetime τ influenced by the fast surface energetic states and the velocity g of the carrier trapped by the surface states. Some experimental results of the parameters τ and g in near-surface region of real Si(111) samples for their various surface treatments, obtained by the offered method, are presented.
Źródło:
Acta Physica Polonica A; 2008, 114, 6A; A-183-A-190
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
New Semiconductor Devices
Autorzy:
Balestra, F.
Powiązania:
https://bibliotekanauki.pl/articles/1811906.pdf
Data publikacji:
2008-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.-i
73.20.-r
73.21.-b
73.23.-b
73.30.+y
73.40.-c
73.50.-h
73.63.-b
Opis:
A review of recently emerging semiconductor devices for nanoelectronic applications is given. For the end of the international technology roadmap for semiconductors, very innovative materials, technologies and nanodevice architectures will be needed. Silicon on insulator-based devices seem to be the best candidates for the ultimate integration of integrated circuits on silicon. The flexibility of the silicon on insulator-based structure and the possibility to realize new device architectures allow to obtain optimum electrical properties for low power and high performance circuits. These transistors are also very interesting for high frequency and memory applications. The performance and physical mechanisms are addressed in single- and multi-gate thin film Si, SiGe and Ge metal-oxide-semiconductor field-effect-transistors. The impact of tensile or compressive uniaxial and biaxial strains in the channel, of high k materials and metal gates as well as metallic Schottky source-drain architectures are discussed. Finally, the interest of advanced beyond-CMOS (complementary MOS) nanodevices for long term applications, based on nanowires, carbon electronics or small slope switch structures are presented.
Źródło:
Acta Physica Polonica A; 2008, 114, 5; 945-974
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Majorana States in Presence of Electron Interactions: Spinful Fractional Josephson Junction with a Quantum Dot
Autorzy:
Stefański, P.
Powiązania:
https://bibliotekanauki.pl/articles/1029763.pdf
Data publikacji:
2018-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.63.-b
73.21.La
31.15.V-
74.50.+r
Opis:
We consider a fractional Josephson junction mediated by a quantum dot in which the Zeeman field arising from the magnetic fields driving left and right wires into topological phase can be tuned. Both fields, forming an angle Θp, can be rotated in the common plane perpendicular to the spin-orbit field in the wires. For Θp=0 the dot can be regarded as effectively non-interacting due to the large Zeeman splitting, whereas for Θp ≤sssimπ electron interactions are switched on the dot, affecting Majorana states. The tunnel electrode, weakly coupled to the dot from the top, allows to probe their density of states via conductance measurement. We show that electron interactions renormalize Majorana peak and introduce characteristic asymmetry in the gate voltage dependence of the transverse zero-bias conductance through the dot.
Źródło:
Acta Physica Polonica A; 2018, 133, 3; 362-365
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Probing Fractional Josephson Junction with a Quantum Dot
Autorzy:
Stefański, P.
Powiązania:
https://bibliotekanauki.pl/articles/1398600.pdf
Data publikacji:
2016-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.63.-b
73.21.La
74.78.Na
74.50.+r
Opis:
We consider theoretically a junction between two topological superconducting wires, mediated by a quantum dot. The wires are modelled by the Kitaev chains tuned into topological phase, which possess unpaired Majorana states at their ends. We derive the low energy Hamiltonian of the model. The Majorana states closer to the dot convert into the Dirac fermion inside the dot, forming fractional Josephson junction. The dot is additionally weakly coupled to the normal tunneling probe allowing transport measurement through the dot. When the topological wires are short, the unpaired Majorana end-states can hybridize inside the wire forming an extended Dirac fermionic state. It yields the destruction of the extended state in the dot. We discuss the dependence of the spectral density of the dot and its conductance on superconducting phase. We show that the conservation of parity of the junction, crucial for successful measurement of the fractional effect, can be assured by the gate voltage manipulation of the dot level position and that in case of an unpaired Majorana state in the junction a half conductance quantum can be observed.
Źródło:
Acta Physica Polonica A; 2016, 130, 2; 554-557
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Localization Effects in GaN/AlGaN Quantum Well - Photoluminescence Studies
Autorzy:
Chwalisz, B.
Wysmołek, A.
Bożek, R.
Korona, K. P.
Stępniewski, R.
Knap, W.
Pakuła, K.
Baranowski, J. M.
Grandjean, N.
Massies, J.
Prystawko, P.
Grzegory, I.
Powiązania:
https://bibliotekanauki.pl/articles/2036024.pdf
Data publikacji:
2003-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.Cr
73.20.-r
73.21.-b
74.40.+k
Opis:
Exciton localization in GaN/AlGaN quantum well structures is studied by photoluminescence. An anomalous temperature behavior of the photoluminescence from the quantum well is observed. With increasing temperature the energy position of the excitonic emission line first decreases up to 20 K, then increases, reaching a maximum around 90 K, and then decreases again in the higher temperature range. The observed behavior is discussed in terms of localization at the interface potential fluctuations. It is argued that the temperature activated migration and subsequent release of the excitons from traps that occurs between 20 K and 90 K are responsible for the observed S-like shape of the energy dependence. The obtained results allow a direct characterization of the energy fluctuations present in GaN/AlGaN quantum wells grown by different techniques.
Źródło:
Acta Physica Polonica A; 2003, 103, 6; 573-578
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Influence of Well-Width Fluctuations on the Electronic Structure of GaN/Al$\text{}_{x}$Ga$\text{}_{1-x}$N Multiquantum Wells with Graded Interfaces
Autorzy:
Valcheva, E.
Dimitrov, S.
Monemar, B.
Haratizadeh, H.
Persson, P.O.A.
Amano, H.
Akasaki, I.
Powiązania:
https://bibliotekanauki.pl/articles/2047708.pdf
Data publikacji:
2007-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.Cr
73.20.-r
73.21.-b
74.40.+k
Opis:
Experimental and computation results based on chemical composition assessment of metal-organic chemical vapour deposition grown undoped GaN/Al$\text{}_{x}$Ga$\text{}_{1-x}$N multiquantum well structures in the low composition limit of x = 0.07 and wide wells demonstrate composition fluctuations in the barrier layers which lead to large-scale nonuniformities and inequivalence of the different wells. As a consequence the experimental photoluminescence spectra at low temperature show a double peak structure indicative of well-width fluctuations by one lattice parameter (2 monolayers).
Źródło:
Acta Physica Polonica A; 2007, 112, 2; 395-400
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Field Dependent Electron and Quadrupole Spin Relaxation: A Unified Treatment
Autorzy:
Kruk, D.
Powiązania:
https://bibliotekanauki.pl/articles/2047257.pdf
Data publikacji:
2007-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
33.25.+k
76.60.-k
82.56.-b
33.35.+r
76.30.-v
Opis:
This article reviews recent theoretical treatments of field dependent relaxation processes in complex systems containing mutually coupled dipolar, quadrupole, and electron spins. The presented approaches are based on an analogy between the Hamiltonian formalisms for quadrupole and zero field splitting interactions. Limitations of the presented treatments, resulting from the validity conditions of the second-order perturbation theory are discussed in detail.
Źródło:
Acta Physica Polonica A; 2007, 111, 2; 215-238
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Phonon Contribution in Thermodynamics and Transport Properties of Ultrathin Ceramic Films
Autorzy:
Jaćimovski, S.
Šetrajčić, J.
Jaćimovski, M.
Stojanović, V.
Powiązania:
https://bibliotekanauki.pl/articles/1205327.pdf
Data publikacji:
2014-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.50.-h
73.61.-r
74.25.fc
66.30.Xj
65.40.-b
Opis:
The dispersion law, density states of phonons, thermodynamics properties and thermal conductivity was analyzed in this paper. It has been shown that at low temperatures, thermal conductivity of thin film is considerably lower that of bulk-structure. It turned out that phonons in thin film require activation energy for exciting. This leads to extremely low specific heat and specific conductivity at low temperatures. Consequences of quoted facts were discussed in detail and their influence on kinetic and thermodynamic properties of thin films is estimated.
Źródło:
Acta Physica Polonica A; 2014, 126, 3; 811-819
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Effect of Majorana Fermions on Andreev Spectroscopy of Multiband Topological Superconductors
Autorzy:
Silva, A.
Araújo, M.
Sacramento, P.
Powiązania:
https://bibliotekanauki.pl/articles/1402577.pdf
Data publikacji:
2015-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.10.Fd
71.10.Pm
71.10.Li
73.20.-r
74.45.+c
74.20.Rp
74.70.-b
Opis:
We introduce a model for a multiband topological superconductor with two orbitals per lattice site, in two spatial dimensions. Concentrating on the Andreev reflection problem, the appropriate wave function matching conditions for an interface with a normal single-band metal were previously derived in the framework of a quantum waveguide theory. This theory retrieves the correct number of Majorana fermion states as predicted by the topological index. We obtain the differential conductance as a function of bias voltage, which displays the contribution of the Majorana fermions. Interface disorder is also considered. By varying band structure parameters, topological transitions can be induced, whereby the number of the Majorana modes varies. We calculate the effect of such transitions on the differential conductance.
Źródło:
Acta Physica Polonica A; 2015, 128, 2; 210-212
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 16

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