- Tytuł:
- Deep Levels in GaN p-n Junctions Studied by Deep Level Transient Spectroscopy and Laplace Transform Deep-Level Spectroscopy
- Autorzy:
-
Dyba, P.
Placzek-Popko, E.
Zielony, E.
Gumienny, Z.
Grzanka, S.
Czernecki, R.
Suski, T. - Powiązania:
- https://bibliotekanauki.pl/articles/2048090.pdf
- Data publikacji:
- 2011-05
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
73.61.Ey
71.55.Eq
73.40.Kp - Opis:
- p$\text{}^{+}$-n GaN diodes were studied by means of conventional deep level transient spectroscopy and Laplace transform deep-level spectroscopy methods within the temperature range of 77-350 K. Deep level transient signal spectra revealed the presence of a majority and minority trap of indistinguishable signatures. The Laplace transform deep-level spectroscopy technique due to its superior resolution allows us to unambiguously identify and characterize the traps. The apparent activation energy and capture cross-section for the majority trap were found to be equal to 0.63 eV and 2 × 10$\text{}^{-16}$ cm$\text{}^{2}$ and for the minority trap 0.66 eV and 1.6 × 10$\text{}^{-15}$ cm$\text{}^{2}$. It has been confirmed that the Laplace transform deep-level spectroscopy technique is a powerful tool in characterization of the traps of close signatures.
- Źródło:
-
Acta Physica Polonica A; 2011, 119, 5; 669-671
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł