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Wyszukujesz frazę "Zhou, X.B." wg kryterium: Autor


Wyświetlanie 1-2 z 2
Tytuł:
Structural Stabilities and Elastic Constants of EuX (X = O, S, Se, and Te) Compounds at High Pressure
Autorzy:
Kong, B.
Zhou, Z.
Sun, X.
Zhang, L.
Ling-Hu, R.
Powiązania:
https://bibliotekanauki.pl/articles/1400144.pdf
Data publikacji:
2013-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.66.-f
46.70.-p
61.43.-j
75.50.-y
Opis:
The structural stabilities, elastic properties and charge transfers of EuX (X = O, S, Se, Te) compounds as a function of pressure are investigated extensively using first-principles calculations. The ground-state parameters, such as lattice constants, bulk modulus are predicted and compared with the available data, our results are satisfactory. The calculated phase transition pressures from the NaCl-type (B1) structure to the CsCl-type (B2) structure for EuX (X = O, S, Se, Te) also accord with the experiments. Particularly, the elastic constants of EuX (X = O, S, Se, Te) under zero pressure and high pressure are simulated appropriately for the first time via density functional theory. The softening behaviors of the elastic shear modulus $C_{44}$ under pressure for the B1 phase of EuX (X = O, S, Se, Te) are captured, which should be responsible for the pressure-induced structural phase transition in the EuX system. It is also suggested that the softening behavior might be induced partly by the p → d and f → d electron transfers of Eu atom under pressure. In addition, the aggregate elastic modulus (B, G, E), Poisson's ratio (σ), Debye temperature $\Theta p_{D}$ are also successfully obtained for both B1 and B2 phases of EuX.
Źródło:
Acta Physica Polonica A; 2013, 123, 4; 720-727
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Annealing Study of Al/GaSb Contact with the Use of Doppler Broadening Technique
Autorzy:
Wang, H. Y.
Weng, H. M.
Ling, C. C.
Ye, B. J.
Zhou, X. Y.
Han, R. D.
Powiązania:
https://bibliotekanauki.pl/articles/2043365.pdf
Data publikacji:
2005-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.70.Bj
68.35.Ct
73.40.Sx
Opis:
Using a monoenergetic positron beam, annealing study of the Al/n-GaSb system was performed by monitoring the Doppler broadening of the annihilation radiation as a function of the positron implanting energy. The S-parameter against positron energy data was successfully fitted by a three-layer model (Al/interface/GaSb). The annealing out of the open volume defects in the polycrystalline Al layer was revealed by the decrease in the S-parameter and the increase in the effective diffusion length of the Al layer. For the as-deposited samples, a 5 nm interfacial region with S-parameter larger than those of the Al overlayer and the bulk was identified. After the 400ºC annealing, this interfacial region extends to over 40 nm and its S-parameter dramatically drops. This is possibly due to the new phase formation at the interface. Annealing behaviors of S$\text{}_{B}$ and L$\text{}_{+,B}$ of the GaSb bulk showed the annealing out of positron traps (possibly the V$\text{}_{Ga}$-related defect) at 250ºC. However, a further annealing at 400ºC induces the formation of positron traps, which are possibly of another kind of V$\text{}_{Ga}$-related defect and the positron shallow trap GaSb antisite.
Źródło:
Acta Physica Polonica A; 2005, 107, 5; 874-879
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-2 z 2

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