Autor: Zhao, X Y - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Analytical Band Model in Monte Carlo Simulation of Electric Transport in ZnS Thin Film Electroluminescent Devices
Autorzy:: Zhao, H.
Wang, Y.
Xu, X.
Powiązania:: https://bibliotekanauki.pl/articles/2014087.pdf
Data publikacji:: 2000-07
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 78.60.-b
72.20.-i
Opis:: In this paper, an analytical band model is introduced in Monte Carlo simulation of electric transport process in thin film electroluminescent devices. The band structure of ZnS calculated from the empirical pseudopotential method is fitted by using polynomials. The density of states and scattering rates are also calculated from these polynomials. Based on these results, the electric transport process in ZnS-type thin film electroluminescent devices is simulated through the Monte Carlo method. By comparison with others, this model is as fast as the nonparabolic model and as accurate as the full band model. Furthermore, the influence of the band model on the simulation results is also investigated. We show that the dispersion relation and density of states are all important in the simulation.
Źródło:: Acta Physica Polonica A; 2000, 98, 1-2; 123-130
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Intervalley Transfer of Electrons in ZnS-Type Thin Film Electroluminescent Devices
Autorzy:: Zhao, H.
Wang, Y.
Xu, Z.
Xu, X.
Powiązania:: https://bibliotekanauki.pl/articles/2011094.pdf
Data publikacji:: 1999-09
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 72.20.-i
78.60.-b
Opis:: Based on the calculation about intervalley scattering rates in ZnS, the intervalley transfer process in ZnS-type thin film electroluminescent devices is investigated through the Monte Carlo simulation. The transient time of intervalley transfer is about 0.2-0.3 ps, it coincides with that of electron average energy. Intervalley distribution shifts to high valleys as the electric field increased. The electron kinetic energy distributions in different valleys are also gained. We propose that high valleys could store energies, which could prolong the decay of the electron average energy as the field was removed. These results could be used as the basic data on the study of electroluminescent process and the citation of valley parameters in analytic models should be carefully considered.
Źródło:: Acta Physica Polonica A; 1999, 96, 3-4; 475-482
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Optical Properties of InAs Quantum Dots
Autorzy:: Willander, M.
Zhao, Q. X.
Jacob, A. P.
Wang, S. M.
Wei, Y. Q.
Powiązania:: https://bibliotekanauki.pl/articles/2035579.pdf
Data publikacji:: 2002
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 78.67.Hc
78.55.Cr
Opis:: InAs quantum dots grown on GaAs substrate were investigated by optical spectroscopy. We particularly emphasized on the photoluminescence intensity, the stability of the photoluminescence intensity versus temperatures and wavelength of the InAs dot emission at various thermal treatments and different structures. We found that hydrogen can strongly passivate nonradiative centers without causing any structure degradation, and both n- and p-type modulation doping can reduce the decrease in the photoluminescence intensity when the sample temperature increases from the helium temperature to room temperature. The emission wavelength and the efficiency of the InAs quantum dots can also be manipulated by choosing proper materials of cap layer.
Źródło:: Acta Physica Polonica A; 2002, 102, 4-5; 567-576
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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