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Wyświetlanie 1-3 z 3
Tytuł:
Intervalley Transfer of Electrons in ZnS-Type Thin Film Electroluminescent Devices
Autorzy:
Zhao, H.
Wang, Y.
Xu, Z.
Xu, X.
Powiązania:
https://bibliotekanauki.pl/articles/2011094.pdf
Data publikacji:
1999-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.-i
78.60.-b
Opis:
Based on the calculation about intervalley scattering rates in ZnS, the intervalley transfer process in ZnS-type thin film electroluminescent devices is investigated through the Monte Carlo simulation. The transient time of intervalley transfer is about 0.2-0.3 ps, it coincides with that of electron average energy. Intervalley distribution shifts to high valleys as the electric field increased. The electron kinetic energy distributions in different valleys are also gained. We propose that high valleys could store energies, which could prolong the decay of the electron average energy as the field was removed. These results could be used as the basic data on the study of electroluminescent process and the citation of valley parameters in analytic models should be carefully considered.
Źródło:
Acta Physica Polonica A; 1999, 96, 3-4; 475-482
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Analytical Band Model in Monte Carlo Simulation of Electric Transport in ZnS Thin Film Electroluminescent Devices
Autorzy:
Zhao, H.
Wang, Y.
Xu, X.
Powiązania:
https://bibliotekanauki.pl/articles/2014087.pdf
Data publikacji:
2000-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.60.-b
72.20.-i
Opis:
In this paper, an analytical band model is introduced in Monte Carlo simulation of electric transport process in thin film electroluminescent devices. The band structure of ZnS calculated from the empirical pseudopotential method is fitted by using polynomials. The density of states and scattering rates are also calculated from these polynomials. Based on these results, the electric transport process in ZnS-type thin film electroluminescent devices is simulated through the Monte Carlo method. By comparison with others, this model is as fast as the nonparabolic model and as accurate as the full band model. Furthermore, the influence of the band model on the simulation results is also investigated. We show that the dispersion relation and density of states are all important in the simulation.
Źródło:
Acta Physica Polonica A; 2000, 98, 1-2; 123-130
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Optical and Scintillation Properties of $Bi_{4}(Ge_{x}S_{1-x})_{3}O_{12}$ Single Crystal
Autorzy:
Xiao, X.
Xu, J.
Lu, B.
Cai, W.
Zhang, Y.
Shen, H.
Yang, B.
Xiang, W.
Powiązania:
https://bibliotekanauki.pl/articles/1399369.pdf
Data publikacji:
2015-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.10.Fq
61.05.C-
78.20.Ci
78.70.Ps
Opis:
The solid solution crystals, $Bi_{4}(Ge_{x}Si_{1-x})_{3}O_{12}$ (BGSO) with x=0, 0.05, and 0.15, have been grown by the modified vertical Bridgman method. The as-grown crystals show 80% of transmittance with an absorption edge of 285 nm. The relative light yields of BGSO crystals are found to be 7.2%, 6.3%, and 4.2% of CsI(Tl) crystal for x=0, 0.05, and 0.15, respectively. The energy resolutions of these crystals are 18.9%, 21.3%, and 24.7%, respectively, with PMT for 662 keV gamma rays at room temperature when exposed to $\text{}^{137}Cs$ γ -ray. The scintillation performance of BGSO crystals clearly deteriorates with the increase of Ge content. However, the appropriate number of germanium ions doped to BSO crystal can improve its crystallization behavior and effectively restrain component segregation. It is expected that large size crystals of BGSO will be grown and applied to the dual readout calorimeter in the nearest future.
Źródło:
Acta Physica Polonica A; 2015, 127, 3; 854-858
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-3 z 3

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