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    Wyświetlanie 1-4 z 4
    Tytuł:
    Intervalley Transfer of Electrons in ZnS-Type Thin Film Electroluminescent Devices
    Autorzy:
    Zhao, H.
    Wang, Y.
    Xu, Z.
    Xu, X.
    Powiązania:
    https://bibliotekanauki.pl/articles/2011094.pdf
    Data publikacji:
    1999-09
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    72.20.-i
    78.60.-b
    Opis:
    Based on the calculation about intervalley scattering rates in ZnS, the intervalley transfer process in ZnS-type thin film electroluminescent devices is investigated through the Monte Carlo simulation. The transient time of intervalley transfer is about 0.2-0.3 ps, it coincides with that of electron average energy. Intervalley distribution shifts to high valleys as the electric field increased. The electron kinetic energy distributions in different valleys are also gained. We propose that high valleys could store energies, which could prolong the decay of the electron average energy as the field was removed. These results could be used as the basic data on the study of electroluminescent process and the citation of valley parameters in analytic models should be carefully considered.
    Źródło:
    Acta Physica Polonica A; 1999, 96, 3-4; 475-482
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Analytical Band Model in Monte Carlo Simulation of Electric Transport in ZnS Thin Film Electroluminescent Devices
    Autorzy:
    Zhao, H.
    Wang, Y.
    Xu, X.
    Powiązania:
    https://bibliotekanauki.pl/articles/2014087.pdf
    Data publikacji:
    2000-07
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.60.-b
    72.20.-i
    Opis:
    In this paper, an analytical band model is introduced in Monte Carlo simulation of electric transport process in thin film electroluminescent devices. The band structure of ZnS calculated from the empirical pseudopotential method is fitted by using polynomials. The density of states and scattering rates are also calculated from these polynomials. Based on these results, the electric transport process in ZnS-type thin film electroluminescent devices is simulated through the Monte Carlo method. By comparison with others, this model is as fast as the nonparabolic model and as accurate as the full band model. Furthermore, the influence of the band model on the simulation results is also investigated. We show that the dispersion relation and density of states are all important in the simulation.
    Źródło:
    Acta Physica Polonica A; 2000, 98, 1-2; 123-130
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Structural and Optical Properties of ZnO Nanowires Doped with Magnesium
    Autorzy:
    Zhuang, H.
    Wang, J.
    Liu, H.
    Li, J.
    Xu, P.
    Powiązania:
    https://bibliotekanauki.pl/articles/1505046.pdf
    Data publikacji:
    2011-06
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.46.Km
    61.72.uj
    81.15.Gh
    78.67.-n
    Opis:
    ZnO nanowires doped with Mg have been successfully prepared on Au-coated Si (111) substrates using chemical vapor deposition method with a mixture of ZnO, Mg, and activated carbon powders as reactants at 850°C. The structural, compositional, morphological and optical properties of the samples were characterized by X-ray diffraction, scanning electron microscopy, transmission electron microscopy, high-resolution transmission electron microscopy, and photoluminescence spectroscopy. The nanowires are single crystalline in nature and preferentially grow up along [0001] direction with the average diameter and length of about 60 nm and several hundred micrometers, respectively, thinner and longer than the results of literature using the similar method. Room temperature photoluminescence spectroscopy shows a blueshift from the bulk band gap emission, which can be attributed to Mg doping that were detected by energy dispersive X-ray analysis EDX in the nanowires. Finally, the possible growth mechanism of crystalline ZnO nanowires is discussed briefly.
    Źródło:
    Acta Physica Polonica A; 2011, 119, 6; 819-823
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Optical and Scintillation Properties of $Bi_{4}(Ge_{x}S_{1-x})_{3}O_{12}$ Single Crystal
    Autorzy:
    Xiao, X.
    Xu, J.
    Lu, B.
    Cai, W.
    Zhang, Y.
    Shen, H.
    Yang, B.
    Xiang, W.
    Powiązania:
    https://bibliotekanauki.pl/articles/1399369.pdf
    Data publikacji:
    2015-03
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.10.Fq
    61.05.C-
    78.20.Ci
    78.70.Ps
    Opis:
    The solid solution crystals, $Bi_{4}(Ge_{x}Si_{1-x})_{3}O_{12}$ (BGSO) with x=0, 0.05, and 0.15, have been grown by the modified vertical Bridgman method. The as-grown crystals show 80% of transmittance with an absorption edge of 285 nm. The relative light yields of BGSO crystals are found to be 7.2%, 6.3%, and 4.2% of CsI(Tl) crystal for x=0, 0.05, and 0.15, respectively. The energy resolutions of these crystals are 18.9%, 21.3%, and 24.7%, respectively, with PMT for 662 keV gamma rays at room temperature when exposed to $\text{}^{137}Cs$ γ -ray. The scintillation performance of BGSO crystals clearly deteriorates with the increase of Ge content. However, the appropriate number of germanium ions doped to BSO crystal can improve its crystallization behavior and effectively restrain component segregation. It is expected that large size crystals of BGSO will be grown and applied to the dual readout calorimeter in the nearest future.
    Źródło:
    Acta Physica Polonica A; 2015, 127, 3; 854-858
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-4 z 4

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