- Tytuł:
- Charge and Spin Transport in a Metal-Semiconductor Heterostructure with Double Schottky Barriers
- Autorzy:
-
Wolski, S.
Jasiukiewicz, C.
Dugaev, V.
Barnaś, J.
Slobodskyy, T.
Hansen, W. - Powiązania:
- https://bibliotekanauki.pl/articles/1386690.pdf
- Data publikacji:
- 2015-02
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
73.30.+y
73.40.-c
75.76.+j - Opis:
- Taking into account the available experimental results, we model the electronic properties and current-voltage characteristics of a ferromagnet-semiconductor junction. The Fe/GaAs interface is considered as a Fe/(i-GaAs)/n⁺-GaAs/n-GaAs multilayer structure with the Schottky barrier. We also calculate numerically the current-voltage characteristics of a double-Schottky-barrier structure Fe/GaAs/Fe, which are in agreement with available experimental data. For this structure, we have estimated the spin current in the GaAs layer, which characterizes spin injection from the ferromagnet to the semiconductor.
- Źródło:
-
Acta Physica Polonica A; 2015, 127, 2; 472-474
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł