Autor: Wisniowski, P. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Magnetic Field Sensor Based on Magnetic Tunnel Junction with Voltage-Tunable Magnetic Anisotropy
Autorzy:: Skowroński, W.
Wiśniowski, P.
Wrona, J.
Żywczak, A.
Stobiecki, T.
Powiązania:: https://bibliotekanauki.pl/articles/1386807.pdf
Data publikacji:: 2015-02
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 85.75.-d
85.75.Ss
85.35.-p
Opis:: We present a submicron magnetic field sensor with voltage-tunable magnetic field sensitivity. The device, based on magnetic tunnel junction, exhibits high tunnelling magnetoresistance ratio of up to 90%. Perpendicular magnetic anisotropy of thin ferromagnetic sensing layer in combination with an in-plane magnetized reference layer is used to obtain linear change in the sensor resistance in response to the in-plane magnetic field. The perpendicular anisotropy is further controlled by the bias voltage and, thus, the sensitivity of the sensor is changed. In addition, we evaluate the sensor selectivity for the magnetic field direction and present an influence of the temperature on the anisotropy.
Źródło:: Acta Physica Polonica A; 2015, 127, 2; 496-498
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: X-ray Reflectivity and Polarized Neutron Reflectivity Investigations of $[Co_{60}Fe_{60}B_{20}//MgO]_n$ Multilayers
Autorzy:: Vadalà, M.
Wolff, M.
Westerholt, K.
Zabel, H.
Wisniowski, P.
Cardoso, S.
Powiązania:: https://bibliotekanauki.pl/articles/1814030.pdf
Data publikacji:: 2007-12
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 75.50.-i
75.50.Kj
75.50.Cc
Opis:: In recent years magnetic tunnel junctions have been intensively studied and incorporated in magnetic random access memory devices and magnetic sensors, where large tunnelling magnetoresistance ratios are preferred. The largest tunnelling magnetoresistance values until now have been observed in magnetic tunnel junctions with MgO barriers and CoFeB electrodes after annealing of the junction above the recrystallization temperature of the amorphous CoFeB layers. We used X-ray reflectivity and polarized neutron reflectivity to study [Co_{60}Fe_{60}B_ {20}//MgO]_{x14} multilayers with the MgO layers prepared by different methods and annealed at different temperatures in order to compare the interface quality and the structural changes induced upon annealing.
Źródło:: Acta Physica Polonica A; 2007, 112, 6; 1249-1257
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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