Informacja

Drogi użytkowniku, aplikacja do prawidłowego działania wymaga obsługi JavaScript. Proszę włącz obsługę JavaScript w Twojej przeglądarce.

English (EN)·Polski (PL)·Yкраїнський (UK)
Przejdź do strony domowej biblioteki Centralna Biblioteka Wojskowa Link otwiera się w nowym oknie Logo biblioteki Prolib Integro - strona głównaCentralna Biblioteka Wojskowa

Wyszukujesz frazę "Wierzbicka, A. M." wg kryterium: Autor

  Lista filtrów
Wyrównaj
    Wyświetlanie 1-6 z 6
    Tytuł:
    Influence of Substrate on Crystallographic Quality of AlGaN/GaN HEMT Structures Grown by Plasma-Assisted MBE
    Autorzy:
    Wierzbicka, A.
    Żytkiewicz, Z.
    Sobańska, M.
    Kłosek, K.
    Łusakowska, E.
    Powiązania:
    https://bibliotekanauki.pl/articles/1431598.pdf
    Data publikacji:
    2012-04
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.05.cp
    61.05.cm
    81.15.Hi
    68.55.-a
    Opis:
    Results of characterization of AlGaN/GaN high electron mobility transistor (HEMT) structures grown by plasma-assisted molecular beam epitaxy (PAMBE) are reported. High resolution X-ray diffraction (HRXRD) and X-ray reflectivity (XRR) were applied to show that structural properties of the AlGaN/GaN layers strongly depend on the substrate used for growth. It has been found that an additional 10 μm thick HVPE GaN layer grown on a commercial GaN/sapphire substrate significantly improves structural quality of AlGaN layer. However, the best structural parameters have been obtained for the HEMT sample grown on free-standing HVPE bulk GaN substrate.
    Źródło:
    Acta Physica Polonica A; 2012, 121, 4; 899-902
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Defect Structure Formed at Different Stages οf Growth Process in Erbium, Calcium and Holmium Doped $YVO_{4}$ Crystals
    Autorzy:
    Malinowska, A.
    Wierzbicka, E.
    Lefeld-Sosnowska, M.
    Wieteska, K.
    Wierzchowski, W.
    Łukasiewicz, T.
    Świrkowicz, M.
    Graeff, W.
    Powiązania:
    https://bibliotekanauki.pl/articles/1538950.pdf
    Data publikacji:
    2010-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.72.Ff
    Opis:
    The defect structure of $YVO_{4}$ single crystals doped with $Er^{3+},$ $Ho^{3+}$ and $Ca^{2+}$ were studied by X-ray diffraction topographic methods, using laboratory and synchrotron radiation sources. Variously developed block structure was the dominating imperfection of the investigated crystals observed both in conventional Lang and synchrotron topographs. The evaluation of block misorientation was realised by means of superimposed projection and section white beam synchrotron radiation topographs. More possibilities of following the mutual rotation of blocks were provided by means of white beam synchrotron radiation WBSR projection topographs exposed through the fine mesh.
    Źródło:
    Acta Physica Polonica A; 2010, 117, 2; 328-331
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Characterisation of the Defect Structure in Gadolinum Orthovanadate Single Crystals Grown by the Czochralski Method
    Autorzy:
    Wierzbicka, E.
    Malinowska, A.
    Wieteska, K.
    Wierzchowski, W.
    Lefeld-Sosnowska, M.
    Świrkowicz, M.
    Łukasiewicz, T.
    Paulmann, C.
    Powiązania:
    https://bibliotekanauki.pl/articles/1431600.pdf
    Data publikacji:
    2012-04
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.72.Ff
    Opis:
    The $GdVO_4$ single crystals, both undoped and doped with erbium or thulium, were studied by means of X-ray diffraction topographic methods exploring laboratory and synchrotron radiation sources. Variously developed block structure, caused probably by thermal stresses, was revealed. The highest crystallographic perfection was observed in the crystal doped with 4 at.% of thulium, which was free of the grain boundaries in the end part. Contrary to that, the differences in structural perfection between samples cut out from various regions of the crystal and for different kinds of doping, were less distinct in other crystals. The diffraction topographic methods enabled the statement that the misorientation between various blocks is in the range of several arc minutes.
    Źródło:
    Acta Physica Polonica A; 2012, 121, 4; 906-909
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Synchrotron Diffraction topography in Studying of the Defect Structure in Crystals Grown by the Czochralski Method
    Autorzy:
    Wierzchowski, W.
    Wieteska, K.
    Malinowska, A.
    Wierzbicka, E.
    Lefeld-Sosnowska, M.
    Świrkowicz, M.
    Łukasiewicz, T.
    Pajączkowska, A.
    Paulmann, C.
    Powiązania:
    https://bibliotekanauki.pl/articles/1399483.pdf
    Data publikacji:
    2013-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.72.Ff
    Opis:
    The synchrotron diffraction topography had been widely used for investigation of the structural defects in crystals grown by the Czochralski method. Similarly as conventional diffraction topography, the synchrotron topography consists in recording with high spatial resolution of the beam formed by the Bragg reflection from the crystal. The advantages of synchrotron sources come from the possibilities of using the wavelength from a wide spectral range, improved high spatial resolution and collimation of the beam as well as from shortening the time necessary for the investigation. The synchrotron diffraction topography includes experimentally simpler white beam topography and more complicated monochromatic beam (multicrystal) topography, where the beam is formed by monochromators. In the case of Czochralski-grown crystals the synchrotron diffraction topography can be used for studying of the individual dislocations and their complexes such as glide bands or sub-grain boundaries, individual blocks, twinning, the domain structure and various segregation effects negatively affecting crystal properties. In addition, the topographical investigation can provide information concerning the reasons for the generation of defects, useful in the improving of the technology. In the present paper the possibilities of the synchrotron diffraction topography are discussed on the basis of several investigations of the Czochralski-grown oxide and semiconductor crystals, performed by the authors at HASYLAB. The majority of the results concern the oxide crystals grown at the Institute of Electronic Materials Technology, in particular garnets, orthovanadates, mixed calcium barium and strontium niobates as well as praseodymium lanthanum aluminates.
    Źródło:
    Acta Physica Polonica A; 2013, 124, 2; 350-359
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    X-Ray Topographic Studies of Defect Structure in $YVO_4$ Crystals
    Autorzy:
    Wieteska, K.
    Wierzchowski, W.
    Łukasiewicz, T.
    Wierzbicka, E.
    Malinowska, A.
    Lefeld-Sosnowska, M.
    Graeff, W.
    Powiązania:
    https://bibliotekanauki.pl/articles/1812259.pdf
    Data publikacji:
    2008-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.72.Ff
    Opis:
    The perfection of $YVO_4$ crystals, which are predicted to replace formerly used YAG garnets due to higher quantum efficiency and lower excitation level, was studied. The investigations of Czochralski grown undoped $YVO_4$ single crystals were performed mainly by means of X-ray topographic methods. Both synchrotron and conventional X-ray sources were used. The study revealed relatively high density of weak point-like contrasts which can be most probably interpreted as dislocation outcrops. In regions of the crystal close to its boundary we observed glide bands. It was also found that in some regions the dislocations form local subgrain boundaries. The white beam back reflection and monochromatic beam topography allowed to evaluate a local misorientation which not exceeded several angular minutes. No segregation fringes were observed proving a good homogeneity of chemical composition.
    Źródło:
    Acta Physica Polonica A; 2008, 114, 2; 455-461
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Epitaxial ZnO Films Grown at Low Temperature for Novel Electronic Application
    Autorzy:
    Wachnicki, Ł.
    Dużyńska, A.
    Domagala, J.
    Witkowski, B.
    Krajewski, T.
    Przeździecka, E.
    Guziewicz, M.
    Wierzbicka, A.
    Kopalko, K.
    Figge, S.
    Hommel, D.
    Godlewski, M.
    Guziewicz, E.
    Powiązania:
    https://bibliotekanauki.pl/articles/1492723.pdf
    Data publikacji:
    2011-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.15.Aa
    61.05.cp
    81.05.Dz
    Opis:
    Monocrystalline films of zinc oxide were grown at 300C by atomic layer deposition. ZnO layers were grown on various substrates like ZnO bulk crystal, GaN, SiC and $Al_2O_3$. Electrical properties of the films depend on structural quality. Structural quality, surface morphology and optical properties of ZnO films were characterized using X-ray diffraction, scanning electron microscopy, and photoluminescence, respectively. High resolution X-ray diffraction spectra show that the rocking curve FWHM of the symmetrical 00.2 reflection equals to 0.058° and 0.009° for ZnO deposited on a gallium nitride template and a zinc oxide substrate, respectively. In low temperature photoluminescence sharp excitonic lines in the band-edge region with a FWHM equal to 4 meV, 5 meV and 6 meV, for zinc oxide deposited on gallium nitride, zinc oxide and sapphire substrate, respectively.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 6A; A-007-A-010
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-6 z 6

      Ta witryna wykorzystuje pliki cookies do przechowywania informacji na Twoim komputerze. Pliki cookies stosujemy w celu świadczenia usług na najwyższym poziomie, w tym w sposób dostosowany do indywidualnych potrzeb. Korzystanie z witryny bez zmiany ustawień dotyczących cookies oznacza, że będą one zamieszczane w Twoim komputerze. W każdym momencie możesz dokonać zmiany ustawień dotyczących cookies