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    Wyświetlanie 1-3 z 3
    Tytuł:
    Compositions of Al-Based Quasicrystals Interpreted by Cluster Formulae
    Autorzy:
    Chen, H.
    Qiang, J.
    Wang, Y.
    Dong, C.
    Powiązania:
    https://bibliotekanauki.pl/articles/1372748.pdf
    Data publikacji:
    2014-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.44.Br
    36.40.-c
    71.20.Lp
    Opis:
    It is known previously that bulk metallic glass compositions satisfy cluster formulae $[cluster](glue atom)_{1, 3}$ of 24 valence electrons as deduced from our cluster-resonance model. In the present work, it is further shown that compositions of Al-based binary and ternary quasicrystals are also explained by 24-electron cluster formulae of the types $[icosahedron](glue atom)_{0, 1}$, where the icosahedral cluster is identified from a corresponding crystalline approximant according to dense atomic packing and cluster isolation criteria, and the glue atom site is either vacant for an icosahedral quasicrystal or equal to one for a decagonal quasicrystal. Ternary quasicrystals are formulated with the same formulae as their basic binary ones but the icosahedron shell sites are substituted by third elements. The 24-electron cluster formulae are then the chemical and electronic structural units of quasicrystals, mimicking the molecular formulae of chemical substances.
    Źródło:
    Acta Physica Polonica A; 2014, 126, 2; 446-448
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Growth of β-$Ga_2O_3$ Nanorods and Photoluminescence Properties
    Autorzy:
    Zhang,, S.
    Zhuang, H.
    Xue, C.
    Li, B.
    Shen, J.
    Wang, D.
    Powiązania:
    https://bibliotekanauki.pl/articles/1814023.pdf
    Data publikacji:
    2007-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.65.-k
    79.60.Jv
    81.15.Cd
    Opis:
    β-$Ga_2O_3$ nanorods were successfully fabricated through annealing $Ga_2O_3$/Mo films deposited on the Si (111) substrate by radio frequency magnetron sputtering technique. The morphology and structure of the as-synthesized nanorods were characterized by X-ray diffraction, scanning electron microscopy, high-resolution transmission electron microscopy, and energy dispersive X-rays spectroscopy. The results show that the formed nanorods are single-crystalline $Ga_2O_3$ with monoclinic structure. The diameters of nanorods are 200 nm and lengths typically up to several micrometers. A photoluminescence spectrum at room temperature under excitation at 325 nm exhibits two strong blue-light peaks located at about 413.0 nm and 437.5 nm, attributed to the recombination of bound electron-hole exciton in β-$Ga_2O_3$ single crystal. The growth process of the β-$Ga_2O_3$ nanorods is probably dominated by conventional vapor-solid mechanism.
    Źródło:
    Acta Physica Polonica A; 2007, 112, 6; 1195-1201
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Annealing Study of Al/GaSb Contact with the Use of Doppler Broadening Technique
    Autorzy:
    Wang, H. Y.
    Weng, H. M.
    Ling, C. C.
    Ye, B. J.
    Zhou, X. Y.
    Han, R. D.
    Powiązania:
    https://bibliotekanauki.pl/articles/2043365.pdf
    Data publikacji:
    2005-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.70.Bj
    68.35.Ct
    73.40.Sx
    Opis:
    Using a monoenergetic positron beam, annealing study of the Al/n-GaSb system was performed by monitoring the Doppler broadening of the annihilation radiation as a function of the positron implanting energy. The S-parameter against positron energy data was successfully fitted by a three-layer model (Al/interface/GaSb). The annealing out of the open volume defects in the polycrystalline Al layer was revealed by the decrease in the S-parameter and the increase in the effective diffusion length of the Al layer. For the as-deposited samples, a 5 nm interfacial region with S-parameter larger than those of the Al overlayer and the bulk was identified. After the 400ºC annealing, this interfacial region extends to over 40 nm and its S-parameter dramatically drops. This is possibly due to the new phase formation at the interface. Annealing behaviors of S$\text{}_{B}$ and L$\text{}_{+,B}$ of the GaSb bulk showed the annealing out of positron traps (possibly the V$\text{}_{Ga}$-related defect) at 250ºC. However, a further annealing at 400ºC induces the formation of positron traps, which are possibly of another kind of V$\text{}_{Ga}$-related defect and the positron shallow trap GaSb antisite.
    Źródło:
    Acta Physica Polonica A; 2005, 107, 5; 874-879
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-3 z 3

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