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    Wyświetlanie 1-9 z 9
    Tytuł:
    The Effect of Nb Content on the Thermal, Structural, and Magnetic Properties of FeNbB Ribbons
    Autorzy:
    Hua, Z.
    Zuo, B.
    Li, M.
    Wang, X.
    Wang, L.
    Liu, J.
    Wang, D.
    Dong, L.
    Powiązania:
    https://bibliotekanauki.pl/articles/1365063.pdf
    Data publikacji:
    2014-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    65.60.+a
    61.43.Dq
    Opis:
    Amorphous $Fe_{80-x}Nb_{x}B_{20}$ (x = 5, 10, 15) ribbons were prepared by single-roller melt spinning method. The thermal, structural and magnetic properties of $Fe_{80-x}Nb_{x}B_{20}$ (x = 5, 10, 15) ribbons were investigated using differential thermal analysis, X-ray diffraction, and vibrating sample magnetometer. The thermal stability is the lowest for $Fe_{70}Nb_{10}B_{20}$ ribbon and the highest for $Fe_{65}Nb_{15}B_{20}$ ribbon. Along with the increase of Nb content, the supercooled liquid region Δ $T_{x}$ increases, indicating that the amorphous formation ability improves. The primary stages of crystallization of the three ribbons are different. The primary devitrification phases are $Fe_{23}B_6$ type for $Fe_{70}Nb_{10}B_{20}$ and $Fe_{75}Nb_5B_{20}$ ribbons, and α-Fe type for $Fe_{65}Nb_{15}B_{20}$ ribbon. $Fe_{80-x}Nb_{x}B_{20}$ (x = 5, 10) ribbons are ferromagnetic and the $Fe_{65}Nb_{15}B_{20}$ ribbon is paramagnetic. The saturation magnetization ($M_{s}$) decreases with increasing Nb content.
    Źródło:
    Acta Physica Polonica A; 2014, 125, 5; 1149-1151
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Crystallization Process of $Fe_{75}Co_5Zr_{10}B_{10}$ Amorphous Alloy
    Autorzy:
    Sun, Y.
    Zuo, B.
    Wang, D.
    Meng, X.
    Liu, J.
    Wang, L.
    Hua, Z.
    Powiązania:
    https://bibliotekanauki.pl/articles/1399278.pdf
    Data publikacji:
    2013-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.43.Dq
    64.60.My
    Opis:
    $Fe_{75}Co_5Zr_{10}B_{10}$ amorphous alloy prepared by melt-spinning was annealed at various temperatures. The thermal property and microstructures were investigated by differential thermal analysis, X-ray diffraction, and transmission electron microscopy. The crystallization process of $Fe_{75}Co_5Zr_{10}B_{10}$ amorphous alloy is complex. The α-Fe phase precipitates from the amorphous matrix in the initial stage of crystallization. The α-Mn type (χ) phase precipitates at 570°C, but transforms to α-Fe phase and the Laves C14(λ) phase at higher temperature. In the final stage of crystallization, $Fe_3Zr$, $Fe_2Zr$, and unknown phases are observed and the λ-phase disappears. The α-Fe phase preferentially nucleates after annealing at 530C for 10 min and the χ-phase preferentially nucleates after annealing at 600C for 10 min. The nucleation barrier of χ-phase is larger than that of α-Fe phase. The local structure of χ-phase is more similar to amorphous phase.
    Źródło:
    Acta Physica Polonica A; 2013, 124, 4; 685-687
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Effect of Annealing Temperature and Ambient on Formation, Composition and Bandgap of $Cu_2ZnSnS_4$ Thin Films
    Autorzy:
    Sun, Y.
    Yao, B.
    Meng, X.
    Wang, D.
    Long, D.
    Hua, Z.
    Powiązania:
    https://bibliotekanauki.pl/articles/1205220.pdf
    Data publikacji:
    2014-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.55.-a
    Opis:
    Amorphous Cu-Zn-Sn-S precursor films were prepared by sol-gel and spin-coating with copper chloride, zinc chloride, tin chloride and thiourea solutions as starting materials. A $Cu_2ZnSnS_4$ film with kesterite structure and a small amount of chlorine formed when the precursor was annealed under Ar ambient at temperature above 200°C, but its atomic ratios of Cu:Zn:Sn:S far deviated from stoichiometric ratios of the $Cu_2ZnSnS_4$. However, when the precursor films were annealed with sulfur powder together at temperatures between 360 and 480°C, the CZTS film containing a very small amount of Cl formed, and its atomic ratio change little for Cu, Zn, and Sn, increases for S and decreases for Cl with increasing temperature. When the temperature is 480°C, a CZTS only has Cu, Zn, Sn, and S element is fabricated, and the atomic ratio of Cu:Zn:Sn:S is near the stoichiometric ratio. The bandgap of the CZTS decreases with increasing annealing temperature. The mechanisms of the formation and the properties of the CZTS are suggested in the present work.
    Źródło:
    Acta Physica Polonica A; 2014, 126, 3; 751-756
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Solution Growth of Well-Aligned ZnO Nanorods on Sapphire Substrate
    Autorzy:
    Jia, G.
    Hao, B.
    Lu, X.
    Wang, X.
    Li, Y.
    Yao, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1399510.pdf
    Data publikacji:
    2013-07
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.37.Yz
    78.40.Fy
    68.55.J-
    Opis:
    Vertically well-aligned ZnO nanorods arrays were synthesized on sapphire substrates by chemical bath deposition. Those sapphire substrates were seeded to control the density and orientation of ZnO nanorods using sol-gel method. Well-aligned and uniformly distributed ZnO nanorods in a large scale were obtained with strongly (002) preferential orientation. The structural properties were characterized by X-ray diffraction spectrometer and morphological characteristics were analyzed by scanning electron microscopy, respectively. The ZnO nanorods are obvious hexangular wurtzite structure and preferentially oriented along the c-axis (002) and growth vertically to the substrates. The optical properties were further thoroughly studied. What is more, the influences of the strain between substrate and ZnO nanorods due to thickness of the ZnO seed-layer on the characteristics and optical properties of ZnO were also analyzed.
    Źródło:
    Acta Physica Polonica A; 2013, 124, 1; 74-77
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Growth of β-$Ga_2O_3$ Nanorods and Photoluminescence Properties
    Autorzy:
    Zhang,, S.
    Zhuang, H.
    Xue, C.
    Li, B.
    Shen, J.
    Wang, D.
    Powiązania:
    https://bibliotekanauki.pl/articles/1814023.pdf
    Data publikacji:
    2007-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.65.-k
    79.60.Jv
    81.15.Cd
    Opis:
    β-$Ga_2O_3$ nanorods were successfully fabricated through annealing $Ga_2O_3$/Mo films deposited on the Si (111) substrate by radio frequency magnetron sputtering technique. The morphology and structure of the as-synthesized nanorods were characterized by X-ray diffraction, scanning electron microscopy, high-resolution transmission electron microscopy, and energy dispersive X-rays spectroscopy. The results show that the formed nanorods are single-crystalline $Ga_2O_3$ with monoclinic structure. The diameters of nanorods are 200 nm and lengths typically up to several micrometers. A photoluminescence spectrum at room temperature under excitation at 325 nm exhibits two strong blue-light peaks located at about 413.0 nm and 437.5 nm, attributed to the recombination of bound electron-hole exciton in β-$Ga_2O_3$ single crystal. The growth process of the β-$Ga_2O_3$ nanorods is probably dominated by conventional vapor-solid mechanism.
    Źródło:
    Acta Physica Polonica A; 2007, 112, 6; 1195-1201
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Fabrication of High-Density GaN Nanowires through Ammoniating $Ga_2O_3//Nb$ Films
    Autorzy:
    Zhuang, H.
    Li, B.
    Zhang, S.
    Zhang, X.
    Xue, Ch.
    Wang, D.
    Shen, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1813498.pdf
    Data publikacji:
    2008-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.65.-k
    81.05.Ea
    81.15.Cd
    Opis:
    High-density GaN nanowires were successfully synthesized on Si(111) substrates through ammoniating $Ga_2O_3//Nb$ films under flowing ammonia atmosphere at 950°C. The as-synthesized GaN nanowires are characterized by X-ray diffraction, selected-area-electron diffraction, Fourier transform infrared, scanning electron microscopy, and field-emission transmission electron microscopy. The results show that the synthesized nanowires are single-crystal hexagonal wurtzite GaN with diameters ranging from 30 to 100 nm and lengths up to several microns. The photoluminescence spectra measured at room temperature only exhibit a strong and broad emission peak at 367.8 nm. Finally, the growth mechanism of GaN nanowires is discussed.
    Źródło:
    Acta Physica Polonica A; 2008, 113, 2; 723-730
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Annealing Study of Al/GaSb Contact with the Use of Doppler Broadening Technique
    Autorzy:
    Wang, H. Y.
    Weng, H. M.
    Ling, C. C.
    Ye, B. J.
    Zhou, X. Y.
    Han, R. D.
    Powiązania:
    https://bibliotekanauki.pl/articles/2043365.pdf
    Data publikacji:
    2005-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.70.Bj
    68.35.Ct
    73.40.Sx
    Opis:
    Using a monoenergetic positron beam, annealing study of the Al/n-GaSb system was performed by monitoring the Doppler broadening of the annihilation radiation as a function of the positron implanting energy. The S-parameter against positron energy data was successfully fitted by a three-layer model (Al/interface/GaSb). The annealing out of the open volume defects in the polycrystalline Al layer was revealed by the decrease in the S-parameter and the increase in the effective diffusion length of the Al layer. For the as-deposited samples, a 5 nm interfacial region with S-parameter larger than those of the Al overlayer and the bulk was identified. After the 400ºC annealing, this interfacial region extends to over 40 nm and its S-parameter dramatically drops. This is possibly due to the new phase formation at the interface. Annealing behaviors of S$\text{}_{B}$ and L$\text{}_{+,B}$ of the GaSb bulk showed the annealing out of positron traps (possibly the V$\text{}_{Ga}$-related defect) at 250ºC. However, a further annealing at 400ºC induces the formation of positron traps, which are possibly of another kind of V$\text{}_{Ga}$-related defect and the positron shallow trap GaSb antisite.
    Źródło:
    Acta Physica Polonica A; 2005, 107, 5; 874-879
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Experimental Studies on Charging Operation of a Compact Repetitive Tesla Transformer
    Autorzy:
    Zhang, Z.
    Zhang, J.
    Yang, H.
    Qian, B.
    Meng, Z.
    Li, D.
    Wang, S.
    Cao, Y.
    Zhou, W.
    Powiązania:
    https://bibliotekanauki.pl/articles/1807860.pdf
    Data publikacji:
    2009-06
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    84.30.Ng
    84.30.Jc
    84.30.Qi
    84.70.+p
    Opis:
    Charging operations of a compact Tesla transformer were experimentally investigated, in single-shot and rep-rate (50 pps for 1 s) modes, respectively. The charging limitations were also explored. The experimental results were compared and analyzed. The maximum secondary charging voltages of the Tesla transformer were measured to be 380 kV and 300 kV in single-shot and rep-rate modes, respectively. The RMS pulse-to-pulse instability of the secondary charging voltage is generally less than 10% but increases with the increasing initial voltage across the primary capacitor. Since the secondary capacitor of the Tesla transformer is a pulse forming line (PFL), continued operation is possible if there is breakdown in the PFL. Furthermore, operation can even be continued under occasional breakdown for some pulses, without the effects on the operations of subsequent pulses.
    Źródło:
    Acta Physica Polonica A; 2009, 115, 6; 973-975
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Normal Incidence Mid-Infrared Photocurrent in AlGaN/GaN Quantum Well Infrared Photodetectors
    Autorzy:
    Sherliker, B.
    Halsall, M. P.
    Harrison, P.
    Jovanović, V. D.
    Indjin, D.
    Ikonić, Z.
    Parbrook, P. J.
    Whitehead, M. A.
    Wang, T.
    Buckle, P. D.
    Phillips, J.
    Carder, D.
    Powiązania:
    https://bibliotekanauki.pl/articles/2041680.pdf
    Data publikacji:
    2005-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.30.Fs
    Opis:
    We report the growth and characterization of AlGaN/GaN multiple quantum well structures designed to have intersubband transitions in the mid-infrared region of the spectrum. The samples were nominally undoped but were found to contain a high electron population in the wells induced by the local polarization fields. The sample was characterized by the use of the Raman spectroscopy and photocurrent spectroscopy. The Raman spectroscopy shows electronic Raman scattering from intersubband transitions in the AlGaN/GaN quantum wells. The e$\text{}_{1}$-e$\text{}_{2}$ and e$\text{}_{1}$-e$\text{}_{3}$ transitions of the confined 2d electron population in the wells can clearly be observed. A sample designed to absorb at 4μm was fabricated into mesa structures and the vertical photocurrent measured under normal incidence illumination from the free-electron laser FELIX. A wavelength and bias dependent photocurrent was observed in the mid-IR region of spectrum. The peak responsivity was of the order of 50μA/W at 4 K, the photocurrent still being measurable at room temperature.
    Źródło:
    Acta Physica Polonica A; 2005, 107, 1; 174-178
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-9 z 9

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