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Wyszukujesz frazę "Uçar, M." wg kryterium: Autor


Wyświetlanie 1-4 z 4
Tytuł:
Non-Polynomial Spline Method for a Time-Dependent Heat-Like Lane- Emden Equation
Autorzy:
Caglar, S.
Ucar, M.
Powiązania:
https://bibliotekanauki.pl/articles/1491458.pdf
Data publikacji:
2012-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
02.30.Jr
02.60.Lj
02.70.Bf
02.70.Jn
44.05.+e
Opis:
In this study, a time-dependent heat-like Lane-Emden equation is solved by using a non-polynomial spline method. An example is solved to assess the accuracy of the method. The numerical results are obtained for different values (n) of equation. The results indicate that non-polynomial spline method is effectively implemented. It is seen that results are compatible with exact solutions and consistent with other existing numerical methods.
Źródło:
Acta Physica Polonica A; 2012, 121, 1; 262-264
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Photovoltaic Panel Simulation Using a Mobile Application
Autorzy:
Kiriş, B.
Bingöl, O.
Uçar, M.
Powiązania:
https://bibliotekanauki.pl/articles/1031878.pdf
Data publikacji:
2017-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
88.40.-j
88.40.H
Opis:
Today, the use of renewable energy resources is increasing rapidly because the solar energy is easily accessible and abundant. Solar energy is converted into electrical energy using photovoltaic panels. Photovoltaic panel is an energy source, which contains many solar cells, absorbing the solar energy. Factors affecting the operation of photovoltaic panels are the solar irradiance, the temperature, the surface, and the direction angle. For this reason, before employing a photovoltaic panel, the power values, which can be obtained from such photovoltaic panel should be analyzed and evaluated according to the application conditions, considering all these factors. In this study, calculation of power, current and voltage, generated by a photovoltaic panel, was performed on a mobile device for a determined region. Hourly, daily and monthly total power information, obtained according to the characteristics of the photovoltaic panel, such as panel position, direction and inclination, that can be obtained using the mobile device, are presented to the user by the developed application.
Źródło:
Acta Physica Polonica A; 2017, 132, 3; 922-925
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Structural Strength and Fatigue Life Calculation of Y32 Bogie Frame by Finite Element Method
Autorzy:
Ozsoy, M.
Pehlivan, K.
Firat, M.
Ozsoy, N.
Ucar, V.
Powiązania:
https://bibliotekanauki.pl/articles/1402375.pdf
Data publikacji:
2015-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
47.11.Fg
46.50.+a
Opis:
In this study structural strength and fatigue life estimation of Y32 bogie frame were examined by finite element method. A static structural and fatigue life simulation were performed according to TS EN 13749 standard. The results of the static structural and fatigue life simulations depicted that Y32 bogie manufactured by Tuvasas achieved the regulations.
Źródło:
Acta Physica Polonica A; 2015, 128, 2B; B-327-B-329
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
The Role of Hydrostatic Pressure in Electrical Properties of Au/n-GaAs Schottky diodes with Substituted Polyaniline Interfacial Layer
Autorzy:
Özdemir, A.
Abdolahpour Salari, M.
Kökce, A.
Uçar, N.
Powiązania:
https://bibliotekanauki.pl/articles/1031654.pdf
Data publikacji:
2017-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Kp
73.20.At
74.62.Fj
Opis:
Au/polymer P2ClAn(H₃BO₃)/n-GaAs Schottky barrier diodes, where P2ClAn stands for poly(2-chloroaniline), have been fabricated. To fabricate Schottky diodes with polymer interface, n-type GaAs wafer was used. The P2ClAn polymer solution was applied on the front face of the n-GaAs wafer by a pipette. The P2ClAn emeraldine salt was chemically synthesized by using boric acid (H₃BO₃). Schottky diode parameters, such as ideality factor, barrier height and series resistance have been measured, as functions of hydrostatic pressure, using the current-voltage technique. The ideality factor values of Au/P2ClAn/n-GaAs Schottky barrier diodes have decreased from 3.38 to 3.01, the barrier height has increased from 0.653 to 0.731 eV at 0.36 kbar and series resistances were ranging from 14.95 to 14.69. The results obtained from I-V characteristics of Au/P2ClAn/n-GaAs Schottky barrier diodes show that pressure treatment improves the rectifying properties of the diodes. These diodes can be used as pressure-sensitive capacitors, due to pressure-dependence of diode parameters.
Źródło:
Acta Physica Polonica A; 2017, 132, 3; 1118-1121
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-4 z 4

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