- Tytuł:
- A DNA Biosensor Based Interface States of a Metal-Insulator-Semiconductor Diode for Biotechnology Applications
- Autorzy:
-
Al-Ghamdi, A.
Al-Hartomy, O.
Gupta, R.
El-Tantawy, F.
Taskan, E.
Hasar, H.
Yakuphanoglu, F. - Powiązania:
- https://bibliotekanauki.pl/articles/1489876.pdf
- Data publikacji:
- 2012-03
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
73.40.Jn
81.05.Fb
73.30.+y - Opis:
- We studied how a DNA sensor based on the interface states of a conventional metal-insulator-semiconductor diode can be prepared for biotechnology applications. For this purpose, the p-type silicon/metal diodes were prepared using $SiO_2$ and DNA layers. The obtained results were analyzed and compared with interfaces of DNA and $SiO_2$. It is seen that the ideality factor (1.82) of the $Al//p-Si//SiO_2//DNA//Ag$ diode is lower than that (3.31) of the $Al//p-Si//SiO_2//Ag$ diode. This indicates that the electronic performance of DNA/Si junction was better than that of $SiO_2//Si$ junction. The interface states of the $Al//p-Si//SiO_2//DNA//Ag$ and $Al//p-Si//SiO_2//Ag$ junctions were analyzed by conductance technique. The obtained D_{it} values indicate that the DNA layer is an effective parameter to control the interface states of the conventional Si based on metal/semiconductor contacts. Results exhibited that DNA based metal-insulator-semiconductor diode could be used as DNA sensor for biotechnology applications.
- Źródło:
-
Acta Physica Polonica A; 2012, 121, 3; 673-677
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł