- Tytuł:
- Electrical Properties of Hydrogenated Amorphous Si$\text{}_{1-x}$Ge$\text{}_{x}$ Thin Films
- Autorzy:
-
Pisarkiewicz, T.
Stapiński, T.
Kołodziej, A. - Powiązania:
- https://bibliotekanauki.pl/articles/1879921.pdf
- Data publikacji:
- 1991-02
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
72.80.Ng
72.40.+w
73.60.Gx - Opis:
- Thin films of hydrogenated amorphous Si-Ge alloys were obtained by r.f. sputtering in Ar + H$\text{}_{2}$ gas atmosphere using composite targets of Si and Ge. Dark conductivity and photoconductivity were measured in the temperature range of 300-500 K for films with x varying from 0.11 to 0.63. Both dark conductivity and photoconductivity exibit activation type dependences in the temperature range studied. Heterogeneity two-phase model and a model based on Fermi level shift with temperature were invoked to discuss the conduction mechanism.
- Źródło:
-
Acta Physica Polonica A; 1991, 79, 2-3; 203-206
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł