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Wyszukujesz frazę "Schmidt, L." wg kryterium: Autor

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    Wyświetlanie 1-4 z 4
    Tytuł:
    Defect Levels in Gallium Arsenide after Irradiation with Light Ions
    Autorzy:
    Schmidt, T.
    Palmetshofer, L.
    Lübke, K.
    Powiązania:
    https://bibliotekanauki.pl/articles/1877086.pdf
    Data publikacji:
    1995-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.55.Ln
    Opis:
    Deep level centers in GaAs implanted with light ions (H$\text{}^{+}$, He$\text{}^{+}$) were studied by means of deep level transient spectroscopy, double correlation deep level transient spectroscopy and capacity voltage carrier profiling directly after the implantation process and after annealing at various temperatures. Five different electron traps with energy positions between 0.13-0.75 eV are detected. From the evaluated defect production and carrier trapping yields and their annealing behavior we conclude that each of these traps efficiently contributes to the trapping of free carriers. The EL2 defect is created in too low concentrations in order to significantly account for the removal of free carriers.
    Źródło:
    Acta Physica Polonica A; 1995, 87, 2; 543-546
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Dynamics of the Intraband Light Absorption in Selectively Doped GaAs/AlGaAs Quantum Wells
    Autorzy:
    Vorobjev, L.
    Panevin, V.
    Fedosov, N.
    Firsov, D.
    Shalygin, V.
    Seilmeier, A.
    Schmidt, S.
    Zibik, E.
    Towe, E.
    Kapaev, V.
    Powiązania:
    https://bibliotekanauki.pl/articles/1178288.pdf
    Data publikacji:
    2005-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    42.55.Px
    42.60.-v
    Opis:
    Spectral and temperature dependences of equilibrium and non-equi-intersubband light absorption in the mid-infrared spectral range were studied in selectively doped asymmetrical tunnel-coupled GaAs/AlGaAs quantum wells. The temporal evolution of the absorption studied by means of a picosecond pump-probe technique was found to have a biexponential character. The fast decay times are determined by intersubband electron relaxation due to electron scattering by optical phonons and impurities. The presence of long decay times in transient mid-infrared absorption is probably connected with electron transitions from the states in barrier (X and L valleys as well as deep centers) to the states of the quantum well. Experimentally determined intersubband scattering times are compared with the calculated ones.
    Źródło:
    Acta Physica Polonica A; 2005, 107, 2; 429-434
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Strong Electric Field Driven Carrier Transport Non-Linearities in n-Type GaAs/AlGaAs Superlattices
    Autorzy:
    Subačius, L.
    Venckevičius, R.
    Kašalynas, I.
    Seliuta, D.
    Valušis, G.
    Schmidt, J.
    Lisauskas, A.
    Roskos, H.
    Alekseev, K.
    Köhler, K.
    Powiązania:
    https://bibliotekanauki.pl/articles/1505524.pdf
    Data publikacji:
    2011-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.65.Cd
    06.60.Jn
    73.90.+f
    Opis:
    Nanosecond pulsed technique was used to study and discriminate strong electric field induced effects in carrier transport in silicon doped GaAs/$Al_{0.3}Ga_{0.7}As$ superlattices at room temperature. The experiment shows that the superlattice can serve as gain media to employ parametric phenomena for microwave amplification.
    Źródło:
    Acta Physica Polonica A; 2011, 119, 2; 167-169
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Nanostructural Superconducting Materials for Fault Current Limiters and Cryogenic Electrical Machines
    Autorzy:
    Prikhna, T.
    Gawalek, W.
    Savchuk, Ya.
    Sergienko, N.
    Moshchil, V.
    Sokolovsky, V.
    Vajda, J.
    Tkach, V.
    Karau, F.
    Weber, H.
    Eisterer, M.
    Joulain, A.
    Rabier, J.
    Chaud, X.
    Wendt, M.
    Dellith, J.
    Danilenko, N.
    Habisreuther, T.
    Dub, S.
    Meerovich, V.
    Litzkendorf, D.
    Nagorny, P.
    Kovalev, L.
    Schmidt, Ch.
    Melnikov, V.
    Shapovalov, A.
    Kozyrev, A.
    Sverdun, V.
    Kosa, J.
    Vlasenko, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1549637.pdf
    Data publikacji:
    2010-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    74.25.Sv
    74.81.Bd
    74.70.Ad
    74.78.Na
    74.62.Fj
    74.25.Ld
    74.62.Dh
    74.25.Ha
    Opis:
    Materials of the Y-Ba-Cu-O (melt-textured $YBa_{2}Cu_{3}O_{7-δ}$-based materials or MT-YBCO) and Mg-B-O ($MgB_{2}$-based materials) systems with high superconducting performance, which can be attained due to the formation of regularly distributed nanostructural defects and inhomogeneities in their structure can be effectively used in cryogenic technique, in particular in fault current limiters and electrical machines (electromotors, generators, pumps for liquid gases, etc.). The developed processes of high-temperature (900-800°C) oxygenation under elevated pressure (16 MPa) of MT-YBCO and high-pressure (2 GPa) synthesis of $MgB_{2}$-based materials allowed us to attain high superconductive (critical current densities, upper critical fields, fields of irreversibility, trapped magnetic fields) and mechanical (hardness, fracture toughness, Young modulus) characteristics. It has been shown that the effect of materials properties improvement in the case of MT-YBCO was attained due to the formation of high twin density (20-22 $μm^{-1}$), prevention of macrocracking and reduction (by a factor of 4.5) of microcrack density, and in the case of $MgB_{2}$-based materials due to the formation of oxygen-enriched as compared to the matrix phase fine-dispersed Mg-B-O inhomogeneities as well as inclusions of higher borides with near-$MgB_{12}$ stoichiometry in the Mg-B-O matrix (with 15-37 nm average grain sizes). The possibility is shown to obtain the rather high $T_{c}$ (37 K) and critical current densities in materials with $MgB_{12}$ matrix (with 95% of shielding fraction as calculated from the resistant curve).
    Źródło:
    Acta Physica Polonica A; 2010, 117, 1; 7-14
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-4 z 4

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