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    Wyświetlanie 1-7 z 7
    Tytuł:
    Some Magnetic Properties of Thin Films Prepared from Fe-(M-NO-Si-B (M=Cu, Ag, Pt, Pd) Alloys
    Autorzy:
    Gościańska, I.
    Ratajczak, H.
    Sovák, P.
    Konć, M.
    Matta, P.
    Powiązania:
    https://bibliotekanauki.pl/articles/1930604.pdf
    Data publikacji:
    1994-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    75.50.Kj
    75.70.-i
    81.40.-z
    Opis:
    Saturation magnetic induction, B$\text{}_{s}$, and coercive field, H$\text{}_{c}$, have been studied upon annealing in films flash evaporated from Fe$\text{}_{73.5}$M$\text{}_{1}$Nb$\text{}_{3}$Si$\text{}_{13.5}$B$\text{}_{8}$ alloys. The changes in B$\text{}_{s}$ significantly diverged at increasing annealing temperature, T$\text{}_{a}$, and did not indicate any formation of ultrafine grain phase in the films. H$\text{}_{c}$ measured as an angular function in the plane of the films revealed oscillations due to weak in-plane anisotropy. The coercivity increased in the course of annealing at increasing T$\text{}_{a}$, while the in-plane anisotropy decreased at the same time.
    Źródło:
    Acta Physica Polonica A; 1994, 85, 2; 423-426
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Stopping Power and Energy Straggling of Channeled He-Ions in GaN
    Autorzy:
    Turos, A.
    Ratajczak, R.
    Pągowska, K.
    Nowicki, L.
    Stonert, A.
    Caban, P.
    Powiązania:
    https://bibliotekanauki.pl/articles/1504098.pdf
    Data publikacji:
    2011-07
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.82.Fk
    61.85.+p
    68.55.Ln
    68.35.Dv
    Opis:
    GaN epitaxial layers are usually grown on sapphire substrates. To avoid disastrous effect of the large lattice mismatch a thin polycrystalline nucleation layer is grown at 500°C followed by the deposition of thick GaN template at much higher temperature. Remnants of the nucleation layer were visualized by transmission electron microscopy as defect agglomeration at the GaN/sapphire interface and provide a very useful depth marker for the measurement of channeled ions stopping power. Random and aligned spectra of He ions incident at energies ranging from 1.7 to 3.7 MeV have been measured and evaluated using the Monte Carlo simulation code McChasy. Impact parameter dependent stopping power has been calculated for channeling direction and its parameters have been adjusted according to experimental data. For virgin, i.e. as grown, samples, the ratio of channeled to random stopping power is constant and amounts to 0.7 in the energy range studied. Defects produced by ion implantation largely influence the stopping power. For channeled ions the variety of possible trajectories leads to different energy loss at a given depth, thus resulting in much larger energy straggling than that for the random path. Beam energy distributions at different depths have been calculated using the McChasy code. They are significantly broader than those predicted by the Bohr formula for random direction.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 1; 163-166
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Magnetic Properties of Iron-Based Amorphous and Nanocrystalline Fe-Zr-X-B (X: Cu, Al) Alloy Films
    Autorzy:
    Gościańska, I.
    Toliński, T.
    Ratajczak, H.
    Sovák, P.
    Dlugoš, R.
    Konč, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/2013068.pdf
    Data publikacji:
    2000-03
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.61.Tm
    75.50.Bb
    Opis:
    Thermal stability and magnetic properties of thin films, of a few Fe-based amorphous and nanocrystalline alloys, have been studied. The alloys belong to the class Fe-M-B, whose representatives are: Fe$\text{}_{87}$Zr$\text{}_{4}$Cu$\text{}_{1}$B$\text{}_{8}$, Fe$\text{}_{87}$Zr$\text{}_{7}$B$\text{}_{6}$, and Fe$\text{}_{87}$Zr$\text{}_{7}$Al$\text{}_{1}$B$\text{}_{5}$ and are of particular interest because of their wide variety of magnetic properties. The films were prepared by flash evaporation onto liquid nitrogen cooled substrates. Measurements of the Kerr effect, the Hall effect, and ferromagnetic resonance in the films were carried out as functions of the annealing temperature. It was found that the changes in the coercive field H$\text{}_{c}$, resonance linewidth ΔH$\text{}_{pp}$, effective magnetization M$\text{}_{eff}$, Hall parameters, and resistance were correlated with the structural changes in the studied films.
    Źródło:
    Acta Physica Polonica A; 2000, 97, 3; 463-466
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Resonant Photoemission Spectroscopy Study on the Contribution of the Yb 4f States to the Electronic Structure of ZnO
    Autorzy:
    Demchenko, I.
    Melikhov, Y.
    Konstantynov, P.
    Ratajczak, R.
    Barcz, A.
    Guziewicz, E.
    Powiązania:
    https://bibliotekanauki.pl/articles/1030972.pdf
    Data publikacji:
    2018-04
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    77.55.hf
    74.25.Jb
    33.60.+q
    Opis:
    The electronic structure of Yb implanted ZnO has been studied by the resonant photoemission spectroscopy. The contribution of the Yb 4f partial density of states is predominant at binding energy about 7.5 and ≈11.7 eV below the VB maximum. At photon energy about 182 eV the multiplet structure around 11.7 eV shows the strongest resonance that corresponds to the ¹I multiplet which is almost exclusively responsible for this resonance, while ³H and ³F states are responsible for the resonance around 7.5 eV. It was also found that the Yb 4f partial density of states distribution shows some similarity to Yb₂O₃.
    Źródło:
    Acta Physica Polonica A; 2018, 133, 4; 907-909
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    On the Question of Ferromagnetism in Proton and He-Irradiated Carbon
    Autorzy:
    Szczytko, J.
    Juszyński, P.
    Teliga, L.
    Twardowski, A.
    Stonert, A.
    Ratajczak, R.
    Korman, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1811995.pdf
    Data publikacji:
    2008-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    75.20.Ck
    75.50.Dd
    Opis:
    We tried to repeat the observation of the ferromagnetic response in proton and He-irradiated carbon made by the group of Esquinazi et al. We used $He^+$ and $H^+$ beams focused on graphite sample. The amount of charge deposited in the sample was comparable to the amount of charge used by Esquinazi. Magnetic measurements were performed in SQUID magnetometer. The magnetization of the samples before and after irradiation was compared. We did not observe any ferromagnetic enhancement of magnetization of our irradiated samples. Even if experiment was not the same as Esqinazi's one, we can exclude some of the mechanisms of ferromagnetism proposed by Esquinazi.
    Źródło:
    Acta Physica Polonica A; 2008, 114, 5; 1387-1390
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    RBS/Channeling and TEM Study of Damage Buildup in Ion Bombarded GaN
    Autorzy:
    Pągowska, K.
    Ratajczak, R.
    Stonert, A.
    Turos, A.
    Nowicki, L.
    Sathish, N.
    Jóźwik, P.
    Muecklich, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1504096.pdf
    Data publikacji:
    2011-07
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.82.Fk
    61.85.+p
    68.55.Ln
    68.35.Dv
    Opis:
    A systematic study on structural defect buildup in 320 keV Ar-ion bombarded GaN epitaxial layers has been reported, by varying ion fluences ranged from 5 × $10^{12}$ to 1 × $10^{17}$ at./$cm^2$. 1 μm thick GaN epitaxial layers were grown on sapphire substrates using the metal-organic vapor phase epitaxy technique. Rutherford backscattering/channeling with 1.7 $MeV^4He$ beam was applied for analysis. As a complementary method high resolution transmission electron microscopy has been used. The later has revealed the presence of extended defects like dislocations, faulted loops and stacking faults. New version of the Monte Carlo simulation code McChasy has been developed that makes it possible to analyze such defects on the basis of the bent channel model. Damage accumulation curves for two distinct types of defects, i.e. randomly displaced atoms and extended defects (i.e. bent channel) have been determined. They were evaluated in the frame of the multistep damage accumulation model, allowing numerical parameterization of defect transformations occurring upon ion bombardment. Displaced atoms buildup is a three-step process for GaN, whereas extended defect buildup is always a two-step process.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 1; 153-155
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Ultrathin NbN Films for Superconducting Single-Photon Detectors
    Autorzy:
    Słysz, W.
    Guziewicz, M.
    Borysiewicz, M.
    Domagała, J.
    Pasternak, I.
    Hejduk, K.
    Rzodkiewicz, W.
    Ratajczak, J.
    Bar, J.
    Węgrzecki, M.
    Grabiec, P.
    Grodecki, R.
    Węgrzecka, I.
    Sobolewski, R.
    Powiązania:
    https://bibliotekanauki.pl/articles/1504147.pdf
    Data publikacji:
    2011-07
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    74.62.Bf
    74.78.-w
    81.15.Cd
    81.15.Jj
    Opis:
    We present our research on fabrication and structural and transport characterization of ultrathin superconducting NbN layers deposited on both single-crystal $Al_2O_3$ and Si wafers, and $SiO_2$ and $Si_3N_4$ buffer layers grown directly on Si wafers. The thicknesses of our films varied from 6 nm to 50 nm and they were grown using reactive RF magnetron sputtering on substrates maintained at the temperature 850°C. We have performed extensive morphology characterization of our films using the X-ray diffraction method and atomic force microscopy, and related the results to the type of the substrate used for the film deposition. Our transport measurements showed that even the thinnest, 6 nm thick NbN films had the superconducting critical temperature of 10-12 K, which was increased to 14 K for thicker films.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 1; 200-203
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-7 z 7

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