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Wyszukujesz frazę "Rahman, M. M." wg kryterium: Autor


Wyświetlanie 1-5 z 5
Tytuł:
Driveless Gyroscope Response of a Quartz Piezoelectric Vibratory Tuning Fork
Autorzy:
Abdel-Rahman, M.
Albassam, B.
Alduraibi, M.
Powiązania:
https://bibliotekanauki.pl/articles/1193399.pdf
Data publikacji:
2015-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
85.85.+j
Opis:
In this paper, we report on the observation of a gyroscope response in the absence of drive oscillator circuitry in a single ended quartz piezoelectric tuning fork. The tuning fork gyroscope was fabricated by conventional photolithography and wet etching techniques. The tuning fork length is 4 mm and the stem length is 2 mm; the tuning fork width and thickness are 0.4 mm and 0.35 mm, respectively. The measured gyroscope sensitivity and signal to noise ratio were 0.22 mV/°/s and 40, respectively, at a rotational rate of 60 °/s.
Źródło:
Acta Physica Polonica A; 2015, 127, 4; 1352-1354
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electroluminescence Enhancement of Polymer Light Emitting Diodes Through Surface Plasmons by Ag Nanoplates
Autorzy:
Aziz, T.
Salleh, M.
Bakar, N.
Umar, A.
Rahman, M.
Powiązania:
https://bibliotekanauki.pl/articles/1186484.pdf
Data publikacji:
2016-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.20.Mf
Opis:
This paper reports a study on the surface plasmon effect of Ag nanoplates on electroluminescent property of polymer light emitting diodes. The diode is a single layer light emitting device made of poly [9,9-di-(2-ethylhexyl)-fluorenyl-2,7-diyl] (PEHF). 5 wt.% of Ag nanoplates were incorporated into the PEHF layer. The results showed that the electroluminescence intensity of the diodes is increased by 51.85%, compared with the device without the Ag nanoplates. The enhancement is due to the coupling process between the Ag surface plasmon with the emission light from the PEHF. The occurrence of the coupling process was proved firstly based on the fact that the exciton lifetime of the PEHF:Ag layer is shorter than that without Ag, as measured by time-resolved photoluminescence spectroscopy. Secondly, the PEHF photoluminescence peak at 425 nm is overlaping with the surface plasmon absorption peak of Ag nanoplates.
Źródło:
Acta Physica Polonica A; 2016, 129, 4; 711-713
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Fabrication and Characterization of Vanadium/Vanadium Pentoxide/Vanadium (V/V₂O₅/V) Tunnel Junction Diodes
Autorzy:
Zia, M.
Abdel-Rahman, M.
Al-Khalli, N.
Debbar, N.
Powiązania:
https://bibliotekanauki.pl/articles/1401362.pdf
Data publikacji:
2015-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
85.30.Kk
Opis:
A metal/insulator/metal (MIM) diode is a structure in which a thin oxide layer is sandwiched between two metal layers. Metal/insulator/metal (MIM) diodes coupled to antennas have been widely investigated as detectors for millimeter wave and infrared radiation for imaging and spectroscopic applications. In this work, we report on the fabrication and characterization of MIM tunnel junction diodes by using a new material combination, vanadium-vanadium pentoxide-vanadium (V/V₂O₅/V), with contact areas of 2× 2 μm². The V/V₂O₅/V MIM was fabricated using electron-beam lithography, sputter deposition and conventional liftoff methods. The fabricated V/V₂O₅/V MIM diodes showed a maximum absolute sensitivity of 2.35 $V^{-1}$. In addition, noise spectra for the fabricated MIM diodes were measured and analyzed.
Źródło:
Acta Physica Polonica A; 2015, 127, 4; 1289-1291
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Design and Optimization of Microbolometer Multilayer Optical Cavity
Autorzy:
Awad, E.
Al-Khalli, N.
Abdel-Rahman, M.
Debbar, N.
Alduraibi, M.
Powiązania:
https://bibliotekanauki.pl/articles/1401364.pdf
Data publikacji:
2015-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
85.60.Bt
42.25.Bs
Opis:
Microbolometers are the most widely used detectors in long-wave infrared uncooled thermal imagers. An optical cavity is required within a microbolometer structure to increase its optical absorption. In this work we present a detailed study on the design and optimization of a microbolometer optical cavity using Essential-Macleod package. In the simulations, the cavity is considered as thin film multi-layers that form cascaded Fabry-Perot optical cavities. In the design phase, the structures of layers are selected, which includes selection of materials and initial thickness. The absorbing layers are chosen to be made of vanadium-pentoxide (V₂O₅) and titanium (Ti). In the optimization phase, the designed layer thicknesses are varied to maximize optical absorption within the absorbing layers. The simulations show that Ti layer absorption dominates over the V₂O₅ layer. Also, the optimization proves that the thickness of cavity's air-gap is not equal simply to quarter-wavelength, because of the presence of a complex cascaded Fabry-Perot structure. The optimized air-gap thickness is found to be ≈ 3.5 μm at wavelength of 10.6 μm.
Źródło:
Acta Physica Polonica A; 2015, 127, 4; 1295-1297
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Properties of~Rf Plasma Nitrided Silicon Thin Films at Different Rf Plasma Processing Powers
Autorzy:
Mohamed, S.
Raaif, M.
Abd El-Rahman, A.
Shaaban, E.
Powiązania:
https://bibliotekanauki.pl/articles/1493713.pdf
Data publikacji:
2011-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.15.Dj
61.05.cp
73.61.-r
78.66.-w
Opis:
Nitrided surfaces and composition gradients in thin films exhibit interesting mechanical, electrical and optical properties. Therefore, silicon (Si) thin films were prepared by electron beam evaporation and nitrided by an inductively coupled rf plasma. The effects of successive plasma processing power on structural and optical properties as well as electrical resistivity were examined by different characterization techniques. The Si thin films were transformed gradually into nitrides compound thin films and the amount of nitrogen in the film increased with increasing the rf processing power. The Si nitrided films showed structural, optical and electrical properties that depend on the nitriding power. Increasing the rf plasma processing power caused amorphization, reduced the thickness, increased transmittance, increased resistivity and decreased the reflectance of the Si films. The electrical resistivity increased about eight orders of magnitude when the sample nitrided at 500 W. Different optical band gap were determined indicating the presence of different competing phases in the same film. The decrease in refractive index with plasma treatment power is attributed to the possible change in the bucking density as well as to the increase in the band gap.
Źródło:
Acta Physica Polonica A; 2011, 120, 3; 552-557
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-5 z 5

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