Autor: Rahman, M. A. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Electroluminescence Enhancement of Polymer Light Emitting Diodes Through Surface Plasmons by Ag Nanoplates
Autorzy:: Aziz, T.
Salleh, M.
Bakar, N.
Umar, A.
Rahman, M.
Powiązania:: https://bibliotekanauki.pl/articles/1186484.pdf
Data publikacji:: 2016-04
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 73.20.Mf
Opis:: This paper reports a study on the surface plasmon effect of Ag nanoplates on electroluminescent property of polymer light emitting diodes. The diode is a single layer light emitting device made of poly [9,9-di-(2-ethylhexyl)-fluorenyl-2,7-diyl] (PEHF). 5 wt.% of Ag nanoplates were incorporated into the PEHF layer. The results showed that the electroluminescence intensity of the diodes is increased by 51.85%, compared with the device without the Ag nanoplates. The enhancement is due to the coupling process between the Ag surface plasmon with the emission light from the PEHF. The occurrence of the coupling process was proved firstly based on the fact that the exciton lifetime of the PEHF:Ag layer is shorter than that without Ag, as measured by time-resolved photoluminescence spectroscopy. Secondly, the PEHF photoluminescence peak at 425 nm is overlaping with the surface plasmon absorption peak of Ag nanoplates.
Źródło:: Acta Physica Polonica A; 2016, 129, 4; 711-713
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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Tytuł:: Properties of~Rf Plasma Nitrided Silicon Thin Films at Different Rf Plasma Processing Powers
Autorzy:: Mohamed, S.
Raaif, M.
Abd El-Rahman, A.
Shaaban, E.
Powiązania:: https://bibliotekanauki.pl/articles/1493713.pdf
Data publikacji:: 2011-09
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 81.15.Dj
61.05.cp
73.61.-r
78.66.-w
Opis:: Nitrided surfaces and composition gradients in thin films exhibit interesting mechanical, electrical and optical properties. Therefore, silicon (Si) thin films were prepared by electron beam evaporation and nitrided by an inductively coupled rf plasma. The effects of successive plasma processing power on structural and optical properties as well as electrical resistivity were examined by different characterization techniques. The Si thin films were transformed gradually into nitrides compound thin films and the amount of nitrogen in the film increased with increasing the rf processing power. The Si nitrided films showed structural, optical and electrical properties that depend on the nitriding power. Increasing the rf plasma processing power caused amorphization, reduced the thickness, increased transmittance, increased resistivity and decreased the reflectance of the Si films. The electrical resistivity increased about eight orders of magnitude when the sample nitrided at 500 W. Different optical band gap were determined indicating the presence of different competing phases in the same film. The decrease in refractive index with plasma treatment power is attributed to the possible change in the bucking density as well as to the increase in the band gap.
Źródło:: Acta Physica Polonica A; 2011, 120, 3; 552-557
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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