- Tytuł:
- Properties of Neutron Doped Multicrystalline Silicon for Solar Cells
- Autorzy:
-
Pochrybniak, C.
Pytel, K.
Milczarek, J.
Jaroszewicz, J.
Lipiński, M.
Piotrowski, T.
Kansy, J. - Powiązania:
- https://bibliotekanauki.pl/articles/1813183.pdf
- Data publikacji:
- 2008-04
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
81.40.Wx
71.60.-i
78.70.Bj
61.80.-x - Opis:
- The technology of neutron transmutation doping of silicon wafers in MARIA nuclear research reactor is described. The studies of the radiation defects performed with positron annihilation confirmed that divacancies dominate in the irradiated material. Thermal treatment of irradiated silicon at 700-1000°C produces void-phosphorus complexes and void aggregates. The resistivity of the samples produced by neutron transmutation doping was found to be uniform within 2.5% limits. The severe reduction of the minority carrier lifetime in irradiated samples was confirmed.
- Źródło:
-
Acta Physica Polonica A; 2008, 113, 4; 1255-1265
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł