Autor: Piotrowski, J. K. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Properties of Neutron Doped Multicrystalline Silicon for Solar Cells
Autorzy:: Pochrybniak, C.
Pytel, K.
Milczarek, J.
Jaroszewicz, J.
Lipiński, M.
Piotrowski, T.
Kansy, J.
Powiązania:: https://bibliotekanauki.pl/articles/1813183.pdf
Data publikacji:: 2008-04
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 81.40.Wx
71.60.-i
78.70.Bj
61.80.-x
Opis:: The technology of neutron transmutation doping of silicon wafers in MARIA nuclear research reactor is described. The studies of the radiation defects performed with positron annihilation confirmed that divacancies dominate in the irradiated material. Thermal treatment of irradiated silicon at 700-1000°C produces void-phosphorus complexes and void aggregates. The resistivity of the samples produced by neutron transmutation doping was found to be uniform within 2.5% limits. The severe reduction of the minority carrier lifetime in irradiated samples was confirmed.
Źródło:: Acta Physica Polonica A; 2008, 113, 4; 1255-1265
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Influence of TDMAAs Acceptor Precursor on Performance Improvement of HgCdTe Photodiodes
Autorzy:: Madejczyk, P.
Gawron, W.
Piotrowski, A.
Kłos, K.
Rutkowski, J.
Rogalski, A.
Powiązania:: https://bibliotekanauki.pl/articles/1506804.pdf
Data publikacji:: 2010-12
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 42.79.Pw
07.57.Kp
73.21.Cd
78.67.Pt
79.60.Jv
Opis:: One of the key factor which determine HgCdTe photodiode quality is acceptor doping efficiency. This paper presents significant progress made over the past three years in development of acceptor doping technology in metalorganic chemical vapour deposition HgCdTe photovoltaic detectors. High acceptor doping is required for $P^{+}$-contact layers, whereas low doping is necessary for p-type absorbing base layer. Previously, $AsH_3$ precursor was used as an acceptor dopant. This precursor is partially incorporated as electrically neutral As-H pairs, which are likely to be recombination centres in HgCdTe and in consequence influence on the carriers lifetime lowering. Substituting of $AsH_3$ by TDMAAs resulted in higher carrier lifetimes and thereby about one order of magnitude higher $R_0A$ product of HgCdTe photodiodes in temperatures close to 230 K.
Źródło:: Acta Physica Polonica A; 2010, 118, 6; 1199-1204
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Comparative study of the molecular beam epitaxial growth of InAs/GaSb superlattices on GaAs and GaSb substrates
Autorzy:: Benyahia, D.
Kubiszyn, Ł.
Michalczewski, K.
Kębłowski, A.
Martyniuk, P.
Piotrowski, J.
Rogalski, A.
Powiązania:: https://bibliotekanauki.pl/articles/1055151.pdf
Data publikacji:: 2017-08
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 81.15.Hi
68.65.Cd
81.05.Ea
61.05.cp
Opis:: Short period type-II 10 ML InAs/10 ML GaSb superlattices epilayers (λ_{cut-off}=5.4 μm) have been grown on near lattice matched GaSb (001) substrate and on lattice mismatched GaAs (001) substrate, by molecular beam epitaxy system. In the case of growing on GaAs substrate, GaSb buffer layer was grown in order to reduce the lattice mismatch of 7.5% between GaAs substrate and InAs/GaSb superlattices. X-ray diffraction characterization shows a good crystalline quality for both samples, with a full width at half maximum of 190 arcsec and 156 arcsec for the zeroth-order peak of the superlattice grown on GaAs and on GaSb substrate, respectively. The Nomarski microscopy revealed a shiny surface for both samples with a root main square of surface roughness of 9 nm and 11 nm on the case of growing on GaSb and GaAs substrate, respectively.
Źródło:: Acta Physica Polonica A; 2017, 132, 2; 322-324
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 4.

Tytuł:: Studies of dark current reduction in InAsSb mid-wave infrared HOT detectors through two step passivation technique
Autorzy:: Michalczewski, K.
Ivaldi, F.
Kubiszyn, Ł.
Benyahia, D.
Boguski, J.
Kębłowski, A.
Martyniuk, P.
Piotrowski, J.
Rogalski, A.
Powiązania:: https://bibliotekanauki.pl/articles/1055156.pdf
Data publikacji:: 2017-08
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 73.61.Ey
73.25.+i
82.45.Cc
Opis:: We report on the investigation of the surface leakage current for InAs_{1-x}Sb_x (x=0.09) high operation temperature photodiode grown on GaAs substrate in accelerated short-term stability test. The electrochemical passivation technique was proposed to modify the mesa sidewalls properties and obtain anodic sulphur coating covered by SU-8 negative photoresist. The electrical behavior of sulphur anodic film, SU-8 photoresist, and unpassivated devices was compared for devices in variable area diode array test. The surface resistivity for anodic sulphur film, SU-8 and unpassivated devices are equal to 1080, 226, 10200 kΩ cm, respectively, at 150 K and 1340, 429, 2870 kΩ cm, respectively, at 150 K after an exposure of 20 h to atmosphere at 373 K. The Auger recombination process was evaluated as the main mechanism of diffusion current in HOT devices.
Źródło:: Acta Physica Polonica A; 2017, 132, 2; 325-328
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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