Autor: Pikus, A - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Anomalous Magnetoresistance in Multi-Level Quantum Wells
Autorzy:: Averkiev, N. S.
Golub, L. A.
Pikus, G. A.
Powiązania:: https://bibliotekanauki.pl/articles/1969000.pdf
Data publikacji:: 1998-08
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 71.55.Eq
71.70.Ej
73.20.Fz
Opis:: Effect of intensive interlevel transitions in quantum well and strong spin-orbit interaction on weak localization is considered. Anomalous magnetoresistance in classically weak fields is calculated for p-type quantum wells based on A$\text{}_{3}$B$\text{}_{5}$ semiconductors. It is shown that the sign of magnetoresistance changes with varying doping level and the role of the intersubband transitions in weak localization effects depends dramatically on a view of the scattering potential.
Źródło:: Acta Physica Polonica A; 1998, 94, 2; 229-234
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Crystallization Process in Porous and Nonporous Vycor Glass
Autorzy:: Jasińska, B.
Dawidowicz, A. L.
Pikus, S.
Powiązania:: https://bibliotekanauki.pl/articles/2042215.pdf
Data publikacji:: 2005-05
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 78.70.Bj
Opis:: Three stages of thermal and chemical processing of Vycor glass were carried out. Raw material, the glass with small and big pores was studied. In each stage of study various crystallinity degrees of investigated material were obtained. The relation between crystallinity degree and the intensity of o-Ps components was determined. In nonporous material a high correlation between o-Ps intensity and crystallinity degree was found. In porous material the decrease in total o-Ps intensity can be a measure of the crystallinity degree.
Źródło:: Acta Physica Polonica A; 2005, 107, 5; 724-728
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Weak Antilocalization in Quantum Wells
Autorzy:: Knap, W.
Skierbiszewski, C.
Litwin-Staszewska, E.
Kobbi, F.
Zduniak, A.
Robert, J.
Pikus, G.
Iordanskii, S.
Mosser, V.
Zekentes, K.
Powiązania:: https://bibliotekanauki.pl/articles/1873111.pdf
Data publikacji:: 1995-02
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 72.15.Lh
73.20.Fz
72.15.Rn
Opis:: Spin relaxation in degenerated two-dimensional (2D) electron gas is studied by measurements of the magnetic field dependence of the weak antilocalization corrections to the conductivity in GaInAs quantum wells. Consistent quantitative (up to order of magnitude) description of weak antilocalization data on GaAs like heterojunctions and quantum wells was obtained. Our results show that spin precession around the effective magnetic field direction as described by the Dyakonov-Perel model is the main spin relaxation mechanism in degenerated 2D electron gas in semiconductors with no inversion symmetry.
Źródło:: Acta Physica Polonica A; 1995, 87, 2; 427-432
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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