Autor: Pawlowski, R. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Superconductivity versus Diagonal Disorder in the (Hard-Core) Boson-Fermion Model
Autorzy:: Pawłowski, G.
Robaszkiewicz, S.
Micnas, R.
Powiązania:: https://bibliotekanauki.pl/articles/2041476.pdf
Data publikacji:: 2004-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 71.45.Lr
71.55.Jv
74.20.-z
Opis:: The influence of randomness of local pair site energies on superconducting properties of a system of coexisting local pairs and itinerant electrons described by the (hard-core) boson-fermion model is analyzed within variational BCS Hartree-Fock approach. Assuming the rectangular distribution function of the random potential the phase diagrams, critical temperatures, and the chemical potential behaviours are determined.
Źródło:: Acta Physica Polonica A; 2004, 106, 5; 745-749
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Effect of Deep-Level Defects on Transient Photoconductivity of Semi-Insulating 4H-SiC
Autorzy:: Suproniuk, M.
Kamiński, P.
Kozłowski, R.
Pawłowski, M.
Powiązania:: https://bibliotekanauki.pl/articles/1364028.pdf
Data publikacji:: 2014-04
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 72.40.+w
71.55.-i
72.20.-i
Opis:: A model enabling the equilibrium conductivity and transient photoconductivity of semi-insulating 4H-SiC to be simulated has been demonstrated. Using this model, the simulations of both equilibrium conductivity and transient photoconductivity have been carried out. Both the simulation and experimental results have shown that the evolution of photoconductivity in time after switching on the band-to-band generation of electron-hole pairs is strongly affected by the properties of deep level defects. The results of transient photocurrent measurements confirm the simulations results indicating that the $Z_{1/2}$ center is a very effective recombination center in semi-insulating 4H-SiC having detrimental effect on the transient photoconductivity.
Źródło:: Acta Physica Polonica A; 2014, 125, 4; 1042-1048
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Sputtering and Implantation of VV-6025X Surface with Slow Heavy Ions Monitored with PIXE
Autorzy:: Antoszewska, M.
Balcerski, J.
Brzozowski, R.
Dolecki, K.
Frątczak, E.
Gwizdałła, T.
Pawłowski, B.
Moneta, M.
Powiązania:: https://bibliotekanauki.pl/articles/1367499.pdf
Data publikacji:: 2014-07
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 34.35.+a
61.80.Lj
Opis:: In this work the characteristic radiation, emitted during interaction of medium energy (200 keV) ambient heavy ions (Ar) with $Fe_{4}Co_{66}Si_{12}B_{14}Nb_{1}Mo_{2}Cu_{1}$ (VV-6025X) amorphous alloy, was measured in grazing incident-exit angle geometry and in time sequence, in order to determine dynamics of formation of subsurface region, damaged through implantation, sputtering and interface mixing. It was shown that structure and composition of surface is unstable against heavy ions irradiation due to preferential sputtering and implantation of ions, and recoils, and that the dynamics of such modification can be monitored in-situ with particle induced X-ray emission (PIXE) method.
Źródło:: Acta Physica Polonica A; 2014, 126, 1; 136-137
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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