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Wyszukujesz frazę "Misiewicz, W." wg kryterium: Autor

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    Wyświetlanie 1-6 z 6
    Tytuł:
    Landauer Conductance of Generalized Fibonacci-Type Semiconductor Superlattices
    Autorzy:
    Salejda, W.
    Kubisa, M.
    Misiewicz, J.
    Ryczko, K.
    Tyc, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1992188.pdf
    Data publikacji:
    1998-09
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.40.-c
    73.20.Dx
    73.61.Ey
    Opis:
    The quantum model of quasi-one-dimensional generalized Fibonacci semiconductor superlattice with the mass of charge carriers depending on the position in superlattice is formulated. The Landauer electrical conductance σ$\text{}_{L}$ of generalized Fibonacci semiconductor superlattice is studied analytically and numerically. The dynamical maps allowing us to calculate σ$\text{}_{L}$ of the studied systems are presented. It is shown that σ$\text{}_{L}$ as a function of incident energy E of charge carriers oscillates strongly and exhibits the resonant character. We have verified numerically that σ$\text{}_{L}$(E) reaches its local maximum for energies E corresponding to energy eigenvalues of charges in superlattice.
    Źródło:
    Acta Physica Polonica A; 1998, 94, 3; 514-518
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Carrier Dynamics and Dynamic Band-Bending in Type-II ZnTe/ZnSe Quantum Dots
    Autorzy:
    Syperek, M.
    Misiewicz, J.
    Chan, C.
    Dumcenco, D.
    Huang, Y.
    Chou, W.
    Powiązania:
    https://bibliotekanauki.pl/articles/1399095.pdf
    Data publikacji:
    2013-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.67.Hc
    78.55.Et
    78.47.J-
    Opis:
    Carrier dynamics and dynamic band-bending in self-assembled ZnTe/ZnSe quantum dots have been studied by means of time-resolved photoluminescence experiment at low temperatures. The experiment reveals clearly type-II character of the confinement potential in the dot manifested in: (i) long photoluminescence decay time constant of 28-35 ns, and (ii) temporal shift of the quantum dot peak emission towards low energy following the laser pulse excitation. The magnitude of the spectral shift Δ E depends on the dot size and the power density of excitation pulse. For the dots under study and given experimental conditions Δ E ≈ 28 ÷ 42 meV.
    Źródło:
    Acta Physica Polonica A; 2013, 124, 5; 821-823
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Near IR Refractive Index for GaInN Heavily Doped with Silicon
    Autorzy:
    Cywiński, G.
    Kudrawiec, R.
    Rzodkiewicz, W.
    Kryśko, M.
    Litwin-Staszewska, E.
    Misiewicz, J.
    Skierbiszewski, C.
    Powiązania:
    https://bibliotekanauki.pl/articles/1791356.pdf
    Data publikacji:
    2009-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.72.uj
    78.66.Fd
    81.15.Hi
    68.55.-a
    78.20.-e
    Opis:
    The authors report on growth and results of infrared measurements of GaInN heavily doped with silicon. The lattice matched to GaN epitaxial layer of $Ga_{0.998}In_{0.002}N:Si$ has been grown in plasma assisted molecular beam epitaxy in the metal rich conditions. The room temperature Hall concentration and mobility of electrons are 2× $10^{20} cm^{-3}$ and 67 $cm^{2}$/(Vs), respectively. The refractive index has been determined by variable angle spectroscopic ellipsometry. The refractive index exhibited a significant reduction of its value (from 2.25 to 2 at 1.55 μm) at near IR range where are the main interests of potential applications for nitride based intersubband devices. Reported here values of refractive indices at 1.55 and 1.3 μm are appropriate for fabrication of cladding layers with the required contrast to GaN for intersubband devices. The observed drop of refractive index is attributed to the carrier-induced plasma edge effect, which has been directly observed in reflectance spectrum.
    Źródło:
    Acta Physica Polonica A; 2009, 116, 5; 936-938
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    New Numerical Matrix Methods of Solving the Quasi-One-Dimensional Effective-Mass Equation
    Autorzy:
    Salejda, W.
    Tyc, M. H.
    Andrzejewski, J.
    Kubisa, M.
    Misiewicz, J.
    Just, M.
    Ryczko, K.
    Powiązania:
    https://bibliotekanauki.pl/articles/2008323.pdf
    Data publikacji:
    1999-06
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    02.70.Bf
    73.20.Dx
    Opis:
    New efficient numerical methods of computing eigenvalues and eigenvectors of quasi-one-dimensional effective-mass Hamiltonian with arbitrary coordinate dependence of charge carrier mass are presented. Within the proposed approach the effective-mass equation is replaced by a nonsymmetric or symmetric matrix eigenproblem which can be analysed numerically with the help of existing computer routines. The presented methods are verified in special semiconductor heterostructure cases that are solvable within other approaches. A generalization of the presented methods for nonparabolic materials is also discussed.
    Źródło:
    Acta Physica Polonica A; 1999, 95, 6; 881-896
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Investigation of the Non-Square InGaAsP/InP Quantum Wells in the Electric Field by Photoreflectance
    Autorzy:
    Kudrawiec, R.
    Sęk, G.
    Rudno-Rudziński, W.
    Misiewicz, J.
    Wojcik, J.
    Robinson, B. J.
    Thompson, D. A.
    Mascher, P.
    Powiązania:
    https://bibliotekanauki.pl/articles/2035600.pdf
    Data publikacji:
    2002
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.63.Hs
    78.67.-n
    66.10.Cb
    Opis:
    Non-square quantum wells in electric field have been investigated by photoreflectance and photoluminescence spectroscopies. The structures have been obtained by a post-growth modification (rapid thermal annealing) of standard 1.55μm InGaAsP-based laser structures that were grown by gas source molecular beam epitaxy. During rapid thermal annealing a migration of semiconductor atoms across quantum well interfaces changes the quantum well profile from a square well to a rounded well. The modification of the profile changes energy levels in the quantum well and in consequence a blue shift of the quantum well emission peak is observed in photoluminescence. In this paper the blue shift of the ground state transition of post-growth modified quantum well structures has been investigated by both photoluminescence and photoreflectance techniques. Also a blue shift of excited state transitions has been observed in photoreflectance spectra. Generally, a stronger blue shift for the ground state transition than for excited state transitions has been observed. Additionally, oscillator strengths for all quantum well transitions have been determined from photoreflectance spectra. It has been found that the oscillator strength is constant for all quantum well transitions despite of modification of the quantum well profile.
    Źródło:
    Acta Physica Polonica A; 2002, 102, 4-5; 649-657
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Effect of dielectric medium anisotropy on the polarization degree of emission from a single quantum dash
    Autorzy:
    Mrowiński, P.
    Tarnowski, K.
    Olszewski, J.
    Somers, A.
    Kamp, M.
    Höfling, S.
    Reithmaier, J.
    Urbańczyk, W.
    Misiewicz, J.
    Machnikowski, P.
    Sęk, G.
    Powiązania:
    https://bibliotekanauki.pl/articles/1159588.pdf
    Data publikacji:
    2016-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.67.Hc
    71.35.-y
    78.55.-m
    Opis:
    Excitonic emission from single InAs/InGaAlAs/InP quantum dashes has been investigated in the context of degree of linear polarization by post-growth modification of its surrounding dielectric medium. We present optical spectroscopy measurements on a symmetric squared pedestal structures (mesas), and asymmetric rectangular ones oriented parallel or perpendicular to the main in-plane axis of the dashes [1-10]. Polarization resolved microphotoluminescence shows a significant quantitative modification of the degree of linear polarization value from -20% up to 70%. These results have been confronted with calculations of the coupling between the exciton transition dipole moment and electromagnetic field distributed in the vicinity of a quantum dash inside a processed mesa.
    Źródło:
    Acta Physica Polonica A; 2016, 129, 1a; A-48-A-52
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-6 z 6

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