Informacja

Drogi użytkowniku, aplikacja do prawidłowego działania wymaga obsługi JavaScript. Proszę włącz obsługę JavaScript w Twojej przeglądarce.

English (EN)·Polski (PL)·Yкраїнський (UK)
Przejdź do strony domowej biblioteki Centralna Biblioteka Wojskowa Link otwiera się w nowym oknie Logo biblioteki Prolib Integro - strona głównaCentralna Biblioteka Wojskowa

Wyszukujesz frazę "Mazur, K" wg kryterium: Autor

  Lista filtrów
Wyrównaj
Wyświetlanie 1-15 z 16
Tytuł:
X-Ray Topographic Investigation of Cellular Structure and its Relation to another Defects in Various Types of GaAs Single-Crystals
Autorzy:
Wierzchowski, W.
Mazur, K.
Powiązania:
https://bibliotekanauki.pl/articles/1929756.pdf
Data publikacji:
1993-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.10.-i
Opis:
The defect patterns in GaAs crystal grown using liquid encapsulated Czochralski and gradient freeze methods with various types of doping were characterized using complementary X-ray topographic methods. It was found that the cellular structure occurring in the low doped crystal is developed independently from the actual growth surface. The occurrence of the cellular structure is connected with significant lattice deformation, and some results point that significant stress can influence its formation. The high doping prevents formation of the cellular structure, but at higher doping the phenomenon of "cellular growth" can occur due to instabilities of the growth surface. The present results point that defect pattern in GaAs crystals is more affected by the type of doping than by the choice of the growth method.
Źródło:
Acta Physica Polonica A; 1993, 84, 4; 789-794
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Defects in Detwinned LaGaO$\text{}_{3}$ Substrates
Autorzy:
Mazur, K.
Fink-Finowicki, J.
Berkowski, M.
Schell, N.
Powiązania:
https://bibliotekanauki.pl/articles/1964373.pdf
Data publikacji:
1997-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.Mm
68.35.Bs
Opis:
Single crystals of lanthanum gallate would be the suitable substrate for YBaCuO films except for the phase transition and the tendency to twinning existing in this material. However, by appropriate choice of growth conditions in the Czochralski method, it is possible to grow single crystal of LaGaO$\text{}_{3}$ with low density of twin boundaries. Special stress and temperature treatment can then be applied to such materials to remove majority of existing twins. The substrates were examined by X-ray topography before and after detwinning and the surface was scanned with a profilometer.
Źródło:
Acta Physica Polonica A; 1997, 92, 1; 205-208
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
High Quality (100) and (001) Oriented Substrates Prepared from Czochralski Grown SrLaGaO$\text{}_{4}$ and SrLaAlO$\text{}_{4}$ Single Crystals
Autorzy:
Berkowski, M.
Fink-Finowicki, J.
Sass, J.
Mazur, K.
Powiązania:
https://bibliotekanauki.pl/articles/1964370.pdf
Data publikacji:
1997-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.10.Fq
61.50.Ks
68.35.Bs
Opis:
The growth of SrLaGaO$\text{}_{4}$ and SrLaAlO$\text{}_{4}$ crystals on ⟨100⟩ and ⟨001⟩ oriented seeds was investigated. Various defects, which appeared in crystals grown on these two orientations, were observed in polarized light and by X-ray diffraction topography. It was found that to obtain a substrate of the best quality, the crystal should be cut along the growth directions. Therefore, crystals pulled along ⟨100⟩ direction are utilized for preparation of (001) substrates, whereas (100) substrates are better to cut from crystals grown on ⟨001⟩ seed. The quality of the prepared substrates was determined by high resolution X-ray diffraction study in terms of rocking curve and mean mosaic angle.
Źródło:
Acta Physica Polonica A; 1997, 92, 1; 201-204
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
X-Ray Diffraction Investigations of NdGaO$\text{}_{3}$ Single Crystal
Autorzy:
Mazur, K.
Sass, J.
Giersz, W.
Reiche, P.
Schell, N.
Powiązania:
https://bibliotekanauki.pl/articles/1964526.pdf
Data publikacji:
1997-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.10.Fq
61.50.Ks
68.35.Bs
Opis:
Neodymium gallium perovskite single crystals grown with the Czochralski method were examined with several complementary X-ray methods. By means of X-ray diffraction topography and reciprocal space diagram the structural perfection and crystal homogeneity of the studied wafers were determined. Additionally, the results of the X-ray reflectometry investigations of the surface perfection after the mechanochemical treatment are presented.
Źródło:
Acta Physica Polonica A; 1997, 92, 1; 226-230
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Investigation of Misfit Dislocation Sources in GaAs Epitaxial Layers
Autorzy:
Wierzchowski, W.
Mazur, K.
Strupiński, Wł.
Wieteska, K.
Graeff, W.
Powiązania:
https://bibliotekanauki.pl/articles/1945232.pdf
Data publikacji:
1996-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.10.-i
Opis:
The formation of misfit dislocation was studied in GaAs homoepitaxial layers on the substrates containing considerable amount of isoelectronic indium. The layers were grown with metal-oxide chemical vapour deposition and chemical vapour deposition methods including low temperature process with tertiarbutylarsine arsenic source. The critical conditions of misfit dislocation formation were exceeded up to 5×. The samples were examined before and after epitaxial process with a number of different X-ray topographic and diffractometric methods, including high resolution synchrotron white beam topography. The crystallographic identification of the defects was supported by the numerical simulation of topographic images. It was found that a number of threading dislocations, continuing in the epitaxial layer from those existing in the substrate, did not take part in the formation of misfit dislocations despite a suitable slip system. On the other hand, the formation of misfit dislocations from small imperfections of epitaxial deposit was proved in many cases. A reasonable good quality of the layers was confirmed by the resolution of individual defects and only small broadening of rocking curves.
Źródło:
Acta Physica Polonica A; 1996, 89, 3; 341-346
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Topographic and Reflectometric Investigation of Crystallographic Defects and Surface Roughness in 4H Silicon Carbide Homoepitaxial Layers Deposited at Various Growth Rates
Autorzy:
Wierzchowski, W.
Wieteska, K.
Mazur, K.
Kościewicz, K.
Balcer, T.
Strupiński, W.
Paulmann, C.
Powiązania:
https://bibliotekanauki.pl/articles/1431659.pdf
Data publikacji:
2012-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.05.cm
61.72.Ff
61.72.up
Opis:
Undoped 4H silicon carbide epitaxial layers were deposited by means of CVD method with growth rates of 2 μm/h, 5 μm/h and 11 μm/h at 1540°C on n-doped 8°, 4° and 0° off-cut 4H-SiC (00·1) substrates. The structural defects were studied before and after growth of the epitaxial layers by means of conventional Lang topography, synchrotron white beam and monochromatic beam topography and by means of X-ray specular reflectometry. The topographic investigations confirmed the continuation of the dislocations in the epitaxial deposit on the 8° and 4° off-cut substrates without new extended defects. The important difference occurred in the surface roughness of the epitaxial layers, which increased for higher growth rates. The epitaxial layers grown on 0° off-cut substrates at analogous condition contained usually other SiC polytypes, but the influence of the growth rate on the distribution of the polytypes was observed.
Źródło:
Acta Physica Polonica A; 2012, 121, 4; 915-919
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Influence of SiC Surface Preparation on Homoepitaxial Growth; X-ray Reflectometric Studies
Autorzy:
Mazur, K.
Wierzchowski, W.
Wieteska, K.
Hofman, W.
Sakowska, H.
Kościewicz, K.
Strupiński, W.
Graeff, W.
Powiązania:
https://bibliotekanauki.pl/articles/1538812.pdf
Data publikacji:
2010-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.05.cm
61.72.Ff
61.72.up
Opis:
X-ray reflectometric and diffraction topographic methods were applied for examination of 4H and 6H silicon carbide substrates finished with various regimes, as well as, silicon carbide epitaxial layers. The investigations indicated a very good quality of the substrate surfaces finished with the process established at the Institute of Electronic Materials Technology, which provided the surface roughness σ = 0.55 ± 0.07 nm for 4H-SiC wafers. These values were better than those of substrate wafers offered by many commercial producers. The surface roughness was decreased during the initial high temperature etching to σ = 0.22 ± 0.07 nm. A relatively good structural quality was confirmed in the case of 4H epitaxial wafers deposited on the substrates prepared from the crystals manufactured at the IEMT, with the 8° off-cut from the main (001) plane.
Źródło:
Acta Physica Polonica A; 2010, 117, 2; 272-276
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Dynamics of a Polish Internet-Based Social Network
Autorzy:
Zmarzłowski, K.
Mazur, P.
Orłowski, A.
Powiązania:
https://bibliotekanauki.pl/articles/1538567.pdf
Data publikacji:
2010-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
89.65.Gh
89.65.Ef
89.20.Hh
02.50.-r
Opis:
Dynamics of a number of new users registering for the first time to a Polish internet-base social network http://Grono.net is investigated via various regression models. Trends are estimated and the statistical significance of their forecasting is tested.
Źródło:
Acta Physica Polonica A; 2010, 117, 4; 700-702
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Genetic Algorithms Approach to Community Detection
Autorzy:
Mazur, P.
Zmarzłowski, K.
Orłowski, A.
Powiązania:
https://bibliotekanauki.pl/articles/1538569.pdf
Data publikacji:
2010-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
89.65.Gh
89.65.Ef
02.50.-r
89.75.Fb
Opis:
The so-called community detection problem is investigated within a framework of graph theory. Genetic algorithms approach is applied to the task of identifying possible communities. Results obtained for two different fitness functions are presented and compared to each other.
Źródło:
Acta Physica Polonica A; 2010, 117, 4; 703-705
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
PTCDI-C8 Adsorption on Si(100)
Autorzy:
Lament, K.
Mazur, P.
Zuber, S.
Ciszewski, A.
Powiązania:
https://bibliotekanauki.pl/articles/1399078.pdf
Data publikacji:
2013-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.07.Pr
79.60.-i
68.37.Ef
Opis:
Adsorption of N, N'-dioctyl-3,4,9,10-perylenedicarboximide (PTCDI-C8) on the Si(100) surface has been examined using X-ray photoelectron spectroscopy and scanning tunneling microscopy. X-ray photoelectron spectroscopy results show that the bonds are formed between the carbonyl groups of the molecules and the substrate. Scanning tunneling microscopy results show that the first and further layers are disordered.
Źródło:
Acta Physica Polonica A; 2013, 124, 5; 775-776
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Properties of Nanocrystalline $TiO_{2}:V$ Thin Films as a Transparent Semiconducting Oxides
Autorzy:
Sieradzka, K.
Domaradzki, J.
Prociow, E.
Mazur, M.
Lapinski, M.
Powiązania:
https://bibliotekanauki.pl/articles/1807607.pdf
Data publikacji:
2009-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.61.Ey
78.66.-w
71.20.Nr
Opis:
In this work the nanocrystalline $TiO_{2}$ thin films doped with vanadium in amount of 19 at.% and 23 at.% prepared by magnetron sputtering method have been presented. The transmission measurements shows that V-doped $TiO_{2}$ thin films were transparent in ca. 81% in the visible range of light spectrum. On the basis of electrical examinations it was found that fabricated $TiO_2:V$ thin films are semiconductors at room temperature and have different type of electrical conduction depending on the amount of vanadium dopant applied.
Źródło:
Acta Physica Polonica A; 2009, 116, S; S-33-S-35
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Antistatic Properties of Nanofilled Coatings
Autorzy:
Gornicka, B.
Mazur, M.
Sieradzka, K.
Prociow, E.
Lapinski, M.
Powiązania:
https://bibliotekanauki.pl/articles/1538175.pdf
Data publikacji:
2010-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.07.Pr
82.35.Np
Opis:
The results of antistatic and electrical properties investigations of nanofilled coatings have been presented. Antistatic performance of materials is essential not only due to safety and preventing of dust and dirt attraction but also effects on an electrical field distribution in the high voltage insulating systems. The polymer coating added with silver and silica nanoparticles were examined by charge decay measurements after corona charging. The charge decay times have varied appreciably between the nanofilled coatings while the volume and surface resistivity of the all tested coatings did not demonstrate meaningful differences. The polyester coating dissipated fairly better than polyesterimide because of its structure and permittivity. It was found that the ability of surface to drain charge away is the better for coatings with of silver nanoparticles whereas the coatings modified with nanosilica shows the poor antistatic properties; the times of charge decay were four order longer then that of unmodified coatings. Barrier properties of nanosilica may be adverse for charge decay.
Źródło:
Acta Physica Polonica A; 2010, 117, 5; 869-872
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Thin Films Based on Nanocrystalline $TiO_{2}$ for Transparent Electronics
Autorzy:
Prociow, E.
Sieradzka, K.
Domaradzki, J.
Kaczmarek, D.
Mazur, M.
Powiązania:
https://bibliotekanauki.pl/articles/1807647.pdf
Data publikacji:
2009-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.61.Ey
78.66.-w
71.20.Nr
Opis:
In this work, investigations of structural, optical and electrical properties of transparent oxide semiconductor thin films based on $TiO_{2}$ doped with Eu, Pd and Tb, Pd have been presented. The transparent oxide semiconductor nanocrystalline thin films were prepared by magnetron sputtering process. It was shown that doping with selected elements results in semiconducting properties of prepared thin films of oxides with p-($TiO_{2}$:(Tb, Pd)) or n-type ($TiO_{2}$:(Eu, Pd)) of electrical conduction.
Źródło:
Acta Physica Polonica A; 2009, 116, S; S-72-S-74
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electronic Properties of Structures Containing Films of Alq₃ and LiBr Deposited on Si(111) Crystal
Autorzy:
Sito, J.
Grodzicki, M.
Lament, K.
Wasielewski, R.
Mazur, P.
Ciszewski, A.
Powiązania:
https://bibliotekanauki.pl/articles/1033793.pdf
Data publikacji:
2017-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.07.Pr
73.40.Ty
79.60.-i
Opis:
The electronic structures of Alq₃/Si(111) and Alq₃/LiBr/Si(111) interfaces are presented in this report. The studies were carried out in situ in ultrahigh vacuum by ultraviolet photoelectron spectroscopy. Alq₃ and LiBr layers were vapour deposited onto a single crystal of n-type Si(111). The energy level diagrams were prepared for the structures. The formation of the LiBr interfacial layer results in a decrease of the energy barrier at the interface.
Źródło:
Acta Physica Polonica A; 2017, 132, 2; 357-360
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Stress Monitoring in Steel Elements via Detection of AC Magnetic Permeability Changes
Autorzy:
Szumiata, T.
Hibner, K.
Dziewiecki, K.
Mazur, Z.
Gockiewicz, A.
Gzik-Szumiata, M.
Górka, B.
Witoś, M.
Powiązania:
https://bibliotekanauki.pl/articles/1030407.pdf
Data publikacji:
2018-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.80.+q
75.60.Ej
75.50.Bb
75.30.Gw
62.20.D-
Opis:
The influence of mechanical stress on low frequency AC magnetic permeability was studied. The cold-drawn bars with C45 steel were subjected to investigation. The tensile stress (within elastic regime) was applied by means of material testing machine. Simple measuring system was assembled, which consisted of: function generator with magnetizing coil, detection coil and precise AC voltmeter. The registered changes of induced voltage were proportional to the change of magnetic permeability of the stretched rods. The obtained results were almost frequency-independent due to low frequency limit (250-500 Hz, weak eddy currents, no spin-origin energy dissipation). A significant magneto-mechanical hysteresis was observed slightly evolving from cycle to cycle with tendency of stabilization. The extension of basic Stoner-Wohlfarth model of magnetic permeability allowed to fit the data reproducing hysteretic behavior and considering the relaxation of the internal stress. The proposed, low-cost method is suitable in the industrial applications for stress control in large-sized steel elements.
Źródło:
Acta Physica Polonica A; 2018, 133, 3; 719-721
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 16

Ta witryna wykorzystuje pliki cookies do przechowywania informacji na Twoim komputerze. Pliki cookies stosujemy w celu świadczenia usług na najwyższym poziomie, w tym w sposób dostosowany do indywidualnych potrzeb. Korzystanie z witryny bez zmiany ustawień dotyczących cookies oznacza, że będą one zamieszczane w Twoim komputerze. W każdym momencie możesz dokonać zmiany ustawień dotyczących cookies