- Tytuł:
- Periodic Behavior of the Exciton Oscillator Strength with AlAs Thickness in Type II GaAs AlAs Heterostructures
- Autorzy:
-
Gourdon, C.
Martins, D.
Lavallard, P.
Ivchenko, E. L. - Powiązania:
- https://bibliotekanauki.pl/articles/2028741.pdf
- Data publikacji:
- 2001-09
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
78.66.-w
71.70.-d - Opis:
- For a single GaAs/AlAs/GaAs type II pseudodirect double quantum well, as well as for superlattices it was predicted that the oscillator strength of the lowest optical transition has a periodic dependence on the number of AlAs monolayers. The oscillator strength depends on the coupling between theΓ and X electron states. We use samples containing a single GaAs/AlAs/GaAs double quantum well with thickness gradient to show experimental evidence of this effect. The results concerning theΓ-X coupling are obtained from the study of the ratio of photoluminescence intensities of the zero-phonon line and the phonon replica and from their time decay. They show the monolayer dependence of the Γ-X mixing potential. We extend the model describing the Γ-X coupling for ideal interfaces in the frame of the envelope approximation to the case of non-abrupt interfaces and exciton localization. The amplitude of variation of the radiative recombination time due to the Γ-X mixing is well reproduced within this model.
- Źródło:
-
Acta Physica Polonica A; 2001, 100, 3; 409-416
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł